Objetivo The goal of the PLANET project was to develop high throughput, multiwafer MOVPE (metal-organic vapour phase epitaxy) equipment suitable for the realisation of complex III-V heterostructure materials for electronic and optoelectronic devices and circuits. Applications for these devices lie in the field of high-speed signal processing, high-frequency satellite broadcasting, and semiconductor laser-related information transmission and storage.The aim of the project is to develop high throughput, industrial metal organic vapour phase epitaxy (MOVPE) equipment suitable for the fabrication of the complex III-V heterostructures required in microelectronics and optoelectronics. The equipment is based on a completely new concept of and MOVPE system allowing simultaneous growth of 7 wafers in planetary motion, using gas foil rotation. An industrial system has been defined and constructed, and improvements are being implemented. A mathematical model is also developed to simulate the growth. The performances of the equipment are outstanding: the layer thickness uniformity on 2 inch and 3 inch wafers is within +1% and the composition is well reproducible within 0.5%, whilst the average surface defect density is 5/cm{2}. The evaluation of the system in microelectronics is made with high electron mobility transistors; high values of cut-off frequencies (65 GHz) are obtained with low dispersion. In optoelectronics, the very low laser current densities (400 A/cm{2}) obtained also show the excellent quality of the material. The new MOVPE system will supply the sophisticated epitaxial heterostructures required for the developing applications in microelectronics and optoelectronics.The goal of the PLANET project is to develop high throughput, multiwafer metal organic vapour phase epitaxy (MOVPE) equipment suitable for the realization of complex III-V heterostructure materials for electronic and optoelectronic devices and circuits. The project consists of the development and improvement of a reactor prototype, tests of the design, and its application to various types of III-V materials, including indium and phosphorus containing compounds. Throughout the project, epitaxy, characterization and device research support the equipment development work, and reactor modelling supports reactor optimization. Considerable hardware improvements have been implemented. Qualification of the prototype reactor has been successfully made. Agreement between observed parameter behaviour and dimensional simulations is satisfactory.Homogeneity of layer thickness on 2 inch wafers is excellent (of the order of 1%) for aluminium gallium arsenide multilayer structures. Aluminium gallium arsenide multiple quantium well (MQW) lasers show excellent behaviour and good reliability. The results have been extended towards larger substrate sizes. First results on 3 inch substrates are very promising. Indium gallium arsenide pseudomorphic high electron mobility transistors (HEMT) have been successfully realised with a high day to day reproducibility. Emphasis is now on a 3 inch process for these pseudomorphic HEMT.First layers of indium gallium phosphide and aluminium indium gallium phosphide for visible lasers have been grown. The evaluation results are very positive. Growth of laser structures for visible lasers is underway. Indium gallium arsenic phosphide/indium phosphide waveguides have been designed, and low losses realised by etching the waveguides using reactive ion etching (RIE). A preliminary evaluation has been made of indium gallium phosphide and indium aluminium phosphide visible laser materials grown in a conventional reactor.3-dimensional simulations have b een successfully performed the defect density of the layers gas been found to be consistently below 10 defects cm{-2}, with the best results below 1 cm{-2}.The project consisted of the development and improvement of a reactor prototype by an experienced MOVPE equipment manufacturer, tests of the design, and its application to various types of III-V materials, including In- and P-containing compounds. AlGaAs FETs and lasers were made for qualification of the PLANET reactor for these applications. In the second phase, a similar approach was taken towards improved InGaAs transistors and visible lasers made of InGaAlP. Throughout the project, epitaxy, characterisation and device research supported the equipment development work, and reactor modelling supported reactor optimisation. Ámbito científico natural sciencesphysical scienceselectromagnetism and electronicsoptoelectronicsengineering and technologymechanical engineeringvehicle engineeringaerospace engineeringsatellite technologyengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsignal processingnatural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical sciencesopticslaser physics Programa(s) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador Laboratoire d'Électronique Philips Aportación de la UE Sin datos Dirección 22 avenue Descartes 94453 Limeil-Brevannes Francia Ver en el mapa Coste total Sin datos Participantes (5) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo AIXTRON GmbH Alemania Aportación de la UE Sin datos Dirección Jülicher Straße 336-338 52070 Aachen Ver en el mapa Coste total Sin datos NEDERLANDSE PHILIPS BEDRIJVEN BV Países Bajos Aportación de la UE Sin datos Dirección PROF. HOLSTLAAN, 4 5656 AA EINDHOVEN Ver en el mapa Coste total Sin datos POLYFLOW SA Bélgica Aportación de la UE Sin datos Dirección FOND JEAN PAQUES, 8 1348 LOUVAIN-LA-NEUVE Ver en el mapa Coste total Sin datos TELEFONICA España Aportación de la UE Sin datos Dirección C\LERIDA 43 28020 MADRID Ver en el mapa Coste total Sin datos UNIVERSITAT POLITECNICA DE MADRID España Aportación de la UE Sin datos Dirección CAMPUS DE MONTEGANCEDO 28660 MADRID Ver en el mapa Coste total Sin datos
