Objetivo
The present project aims at the development of very advanced all-silicon based nanophotonic devices clearly beyond state of the art in terms of functionality, size, speed, cost and functionality. Common component of the envisaged devices are silicon-on-insulator (SOI) technology based circular Bragg resonators with very high quality factors for a concomitant increase of integration density and device efficiency. In particular, the project will realize an approach for a highly compact silicon Raman laser source, a high-speed silicon electro-optic modulator and a novel approach for resonant signal sensing in SOI waveguides. A further increase of packing densities is aimed by the integration of a multi layer SOI waveguide development.
To reach the ambitious goals of the project, the focussed effort will be guided by substantial design and modelling activities, optimizing the electro-optic response functions of each sub-component. For an improvement of device performance compared to the state-of-the-art, precise control of free carrier lifetimes in these devices is envisaged by the implantation of ultra-fast recombination centres. Device fabrication strongly relies on low-cost, mass fabrication compatible nanolithography technology based on high-precision UV-Nanoimprint.
A possible route to monolithically integrated silicon photonic will be demonstrated to enable new device concepts for communication, automotive, infotainment and biomedical system in the future. Therefore, the project activities are expected to have a profound impact on IST-related technologies.
Ámbito científico
Convocatoria de propuestas
Data not availableRégimen de financiación
STREP - Specific Targeted Research ProjectCoordinador
52074 AACHEN
Alemania