Mid- and Long-wave infrared Colloidal Quantum Dot Optoelectronics

Project Information

INFRADOT

Grant agreement ID: 101002306

DOI

10.3030/101002306

EC signature date 17 February 2021

Start date 1 February 2022

End date 31 January 2028

Funded under

• EXCELLENT SCIENCE - European Research Council (ERC)

Total cost

€ 2 864 562,00

EU contribution

€ 2 864 562,00

Coordinated by

FUNDACIO INSTITUT DE CIENCIES FOTONIQUES
Spain

Periodic Reporting for period 2 - INFRADOT (Mid- and Long-wave infrared Colloidal Quantum Dot Optoelectronics)

Reporting period: 2023-08-01 to 2025-01-31

Summary of the context and overall objectives of the project

INFRADOT aims to revolutionize infrared optoelectronics technology by developing low-cost CMOS compatible material and technology platform based on colloidal quantum dots as a lower cost and scalable alternative to today’s existing technologies based on exotic and epitaxial semiconductors. Furthermore the project aims to explore and develop new materials for the infrared that are free of toxic heavy metals, particularly Hg and Cd. Unleashing the potential of infrared sensing and imaging to consumer electronics, incl. automotive will bring huge benefits to the society improving safety and security, food quality inspection and environmental hazard monitoring, all of which are necessitating access to the deep short, mid and evel long wave infrared. By exploiting intersubband transitions in this class of materials we aim to develop photodetectors, light emitters and thermal sensors utilizing a technology that is proven to be low cost and scalable.

Work performed from the beginning of the project to the end of the period covered by the report and main results achieved so far

During this period we have made important breakthroughs mainly on developing novel infrared quantum dot materials avoiding the use of Hg and Cd and have optimized and controlled their surface chemistry to achieve high optoelectronic grade quality. This has been tested on devices, particularly photodetectors and image sensors. We have also elaborated doping approaches to activate intersubband transitions in quantum dots and study their carrier dynamics aiming to develop further photodetectors and cascade light emitters.

Progress beyond the state of the art and expected potential impact (including the socio-economic impact and the wider societal implications of the project so far)

By the end of the project we envision to have drastically advanced in the field of infrared quantum dot optoelectronics by devising new materials, processes and device architectures to achieve novel device functionalities in the mid and long wave infrared relevant for photodetection and light emission. We also aspire to have made significant breakthroughs on the development of short-wave infrared lasers and photodetectors using this new class of heavy-metal free materials developed in the project.