Advancing Integrated Brillouin Photonics: We have achieved a series of groundbreaking advancements in integrated photonics, pushing the boundaries of device performance and functionality. By harnessing the transformative power of Brillouin photonics and integrating cutting-edge materials and platforms, we have developed solutions that stand to revolutionize optical communications, RF oscillators, and microwave photonic systems.
200x SBS Gain in TeO2-Silicon Nitride Waveguides
Integrating a tellurite (TeO2) layer with silicon nitride waveguides yielded a Brillouin gain of 81 m⁻¹W⁻¹-a 200-fold enhancement over standard silicon nitride platforms, enabling net amplification (5 dB, 3.4 ns delay). This also led to an ultracompact Brillouin laser, 2,000 times smaller than conventional designs with a 7 Hz RF linewidth, and tuneable microwave photonic notch filters (2.2 MHz resolution, 9 GHz range).
Strong SBS in Thin-Film Lithium Niobate (TFLN)
Demonstrated a Brillouin gain of 85 m⁻¹W⁻¹ with angle-dependent SBS control, enabling the first TFLN-based Brillouin laser (>20 nm tuning range, 9 Hz RF linewidth) and an all integrated microwave photonic notch filter combining SBS waveguides, modulators, and resonators.
Thermoelastic Surface Acoustic Waves (SAW)
Metallic grating emitters on TFLN actuated thermoelastic SAWs with modulation frequencies up to 6.58 GHz, enabling on-chip acousto-optic modulation.
Scalable Silicon Nitride Photonic Integrated Circuits
An in-house process for silicon nitride photonic devices achieved low propagation losses (<0.3 dB/cm) and intrinsic Q factors of 1 million, enabling high-volume manufacturing of low-loss silicon nitride photonic integrated circuits.
