Periodic Reporting for period 1 - LASTSTEP (group-IV LASer and deTectors on Si-TEchnology Platform)
Reporting period: 2023-01-01 to 2024-06-30
As of today, Silicon Photonics is the key technology for a large variety of applications comprising sensing, life sciences, computing and communication in particular in the telecom wavelength range around 1.5 µm. In the mid-infrared range, 2-5 µm, many critical applications, as photonic-based gas and biological sensors present immediate social life impact and great economic significance. However, those use cases can only benefit to a limit extent of this technology because of the lack of fully Si-compatible photonic platform.
LASTSTEP major goal is to deliver group-IV based efficient light sources, stand alone and integrable with the well-established technologies in CMOS-electronics, leading to a fully functional Si-based photonic integrated circuits (PICs). LASTSTEP develops technological competences at the level of ready-to-enter into the fab chain of microelectronics a: Group IV monolithic Si photonic platform.
LASTSTEP’s foundation builds our technology know-how, which defines the present state-of-the-art of the group IV lasers, worldwide. The involved partners are leaders of a CMOS-technology for growth and processing of GeSn direct bandgap alloys in an industrial relevant environment. Together with two well-established SMEs on the market of gas and liquid sensing and world leading PIC design and test-house company, we will develop gas and liquid sensor prototypes based on the fully-group-IV photonic platform.
LASTSTEP’s impact is life quality improvement for the society by making available new applications in MIR sensing. Our vision is to secure Europe an outstanding position concerning development and economic exploitation of Si photonics, thereby anticipating maximal return on investment for the EU society. Above all, however, LASTSTEP will bring the decisive further development of silicon photonics into a technologically mature platform ready for new innovations in the communications, health and safety sector.
LASTSTEP major goal is to deliver group-IV based efficient light sources, stand alone and integrable with the well-established technologies in CMOS-electronics, leading to a fully functional Si-based photonic integrated circuits (PICs). LASTSTEP develops technological competences at the level of ready-to-enter into the fab chain of microelectronics a: Group IV monolithic Si photonic platform.
LASTSTEP’s foundation builds our technology know-how, which defines the present state-of-the-art of the group IV lasers, worldwide. The involved partners are leaders of a CMOS-technology for growth and processing of GeSn direct bandgap alloys in an industrial relevant environment. Together with two well-established SMEs on the market of gas and liquid sensing and world leading PIC design and test-house company, we will develop gas and liquid sensor prototypes based on the fully-group-IV photonic platform.
LASTSTEP’s impact is life quality improvement for the society by making available new applications in MIR sensing. Our vision is to secure Europe an outstanding position concerning development and economic exploitation of Si photonics, thereby anticipating maximal return on investment for the EU society. Above all, however, LASTSTEP will bring the decisive further development of silicon photonics into a technologically mature platform ready for new innovations in the communications, health and safety sector.
The results of the WP1 in the first reporting period :
- Task 1.1: Specification for GeSn light sources and photodetectors at room temperature have been given for ELICHENS and Diafir sensors (see Table 2 and Table 3).
- Task 1.2: Proof of concept of gas and light sensing has been identified using integrated GeSn devices on PIC. Sensing performances will be evaluated by end-users. No specification of light sources and photodetectors were given by end-users as sensors performances need first to be determined experimentally to target specific markets in gas and liquid sensing.
- Task 1.3: Advantages and challenges for the GeSn integration into CMOS-compatible silicon photonics were provided and discussed.
The results of the WP2 in the first reporting period :
- Task 2.1: Work under progress to calculate the electronic structure of grown MQW and a method is given to predict refractive index of GeSn alloyes.
- Task 2.2: GeSn-based double heterostructures, MQWs and APDs were grown in AIXTRON and AMAT Epi Centura RPCVD tools. GeSn stacks with 15.4% and 16% of Sn in the active layers were selected for the fabrication of 1st and 2nd generation GeSn devices, while waiting for Ge2H6 gas delivery. Development of a new epitaxy approach called “isothermal growth” enabling GeSn layer growth over a large range of Sn contents large variations with constant process temperatures, reactor pressures and flows of precursors. Good GeSn layers quality have been grown in Juelich and in CEA with germane instead of digermane for next generation of devices.
- Task 2.3: Development of bonding process of GeSn layers on metal and on dielectric.
The results of the WP3 in the first reporting period :
- Task 3.1: GeSn LEDs have been fabricated at the targeted emission wavelength of 3.3 µm. A new mask to fabricate LEDs mesa with different diameters has been delivered. New design of electrical contacts will be processed to improve current spreading in LEDs. Package LEDs with TO39 for ELICHENS.
- Task 3.2: Optical gains has been calculated for GeSn structures at different temperature and under different carrier densities.
- Task 3.3: GeSn layers have been successfully transferred on multiple coated mirrors to go towards VCSELs. Lasing in strained optical cavity have been observed thanks to GeSn layer transfer on SiN stressors. Similar thresholds have been reached in microdisks between GeSn grown with germane and digermane.
- Task 3.4: Electrically pumped GeSn lasers in Fabry-Perot and microdisks cavities have been observed at low temperature.
- Task 3.5: Modelling to couple light emitted from LEDs has been started to couple the broadband light sources to waveguides to cover the relatively large spectrum absorption of CH4 or oils.
The results of the WP4 in the first reporting period :
- Task 4.1: Necessary strain to be applied on active GeSn absorbing layers to reach efficient photodetectors was given.
- Task 4.2: GeSn-based photodetectors have been fabricated showing a detectivity D* 3 times below the specified target of ELICHENS. Modelling of PDs show good agreement with experimental results. Fabry-Perot resonance PDs have been fabricated showing an increase in the D* at specific wavelength.
- Task 4.3: GeSn-based APDs have been modelled and APDs lasers thicknesses and associated doping has been given.
- Task 4.4: First GeSn APDs has been fabricated.
- Task 4.5: Modelling of passive PIC has started and first GeSn/Ge PIC fabricated.
The results of the WP5 in the first reporting period :
Assembly strategies of discrete GeSn devices for gas sensors and liquid sensors have started to be discussed. ELICHENS and Diafir have prepared test set up which permit to validate the use of the component for their application. Commercial LEDs at 3.3 µm delivered to DIAFIR for first tests.
The results of the WP6 in the first reporting period :
- Task 6.1: the deliverable D6.1 dissemination and communication tools has been submitted.
- Task 6.2: the timeline for LASTSTEP dissemination and communication has been given in the deliverable 6.3. A workshop on GeSn has been organized in the framework of LastStep by POLIMI during the ICS/ISTDM 2023 conference
- Task 6.3: Scientific publications and conferences have been listed in the task.
- Task 6.4: A project website, a visual identity, twitter and LinkedIn accounts have been created. Production of a video presenting LastStep activities.
- Task 6.5: First contact to cluster dissemination activities around mid-infrared sensing.
- Task 6.6: The deliverable D6.1 on the initial version of exploitation plan is submitted.
The results of the WP7 in the first reporting period :
- Task 7.1: Submission of the D7.1 on the collaborative platform and management handbook.
- Task 7.2: The project management proceeds smoothly. The monthly Steering Committee meetings are usually attended by at least a representative of each partner, and interactive discussions take place. Any delay is anticipated by the partner(s) in question and alternative action plans are discussed with the WP leader and/or the coordinator.
- Task 7.3: Reporting activities are on track. D7.3 on initial risk of management & data management plan report submitted at M18
- Task 7.4: Submission of the D7.2 on LastStep data management plan.
- Task 1.1: Specification for GeSn light sources and photodetectors at room temperature have been given for ELICHENS and Diafir sensors (see Table 2 and Table 3).
- Task 1.2: Proof of concept of gas and light sensing has been identified using integrated GeSn devices on PIC. Sensing performances will be evaluated by end-users. No specification of light sources and photodetectors were given by end-users as sensors performances need first to be determined experimentally to target specific markets in gas and liquid sensing.
- Task 1.3: Advantages and challenges for the GeSn integration into CMOS-compatible silicon photonics were provided and discussed.
The results of the WP2 in the first reporting period :
- Task 2.1: Work under progress to calculate the electronic structure of grown MQW and a method is given to predict refractive index of GeSn alloyes.
- Task 2.2: GeSn-based double heterostructures, MQWs and APDs were grown in AIXTRON and AMAT Epi Centura RPCVD tools. GeSn stacks with 15.4% and 16% of Sn in the active layers were selected for the fabrication of 1st and 2nd generation GeSn devices, while waiting for Ge2H6 gas delivery. Development of a new epitaxy approach called “isothermal growth” enabling GeSn layer growth over a large range of Sn contents large variations with constant process temperatures, reactor pressures and flows of precursors. Good GeSn layers quality have been grown in Juelich and in CEA with germane instead of digermane for next generation of devices.
- Task 2.3: Development of bonding process of GeSn layers on metal and on dielectric.
The results of the WP3 in the first reporting period :
- Task 3.1: GeSn LEDs have been fabricated at the targeted emission wavelength of 3.3 µm. A new mask to fabricate LEDs mesa with different diameters has been delivered. New design of electrical contacts will be processed to improve current spreading in LEDs. Package LEDs with TO39 for ELICHENS.
- Task 3.2: Optical gains has been calculated for GeSn structures at different temperature and under different carrier densities.
- Task 3.3: GeSn layers have been successfully transferred on multiple coated mirrors to go towards VCSELs. Lasing in strained optical cavity have been observed thanks to GeSn layer transfer on SiN stressors. Similar thresholds have been reached in microdisks between GeSn grown with germane and digermane.
- Task 3.4: Electrically pumped GeSn lasers in Fabry-Perot and microdisks cavities have been observed at low temperature.
- Task 3.5: Modelling to couple light emitted from LEDs has been started to couple the broadband light sources to waveguides to cover the relatively large spectrum absorption of CH4 or oils.
The results of the WP4 in the first reporting period :
- Task 4.1: Necessary strain to be applied on active GeSn absorbing layers to reach efficient photodetectors was given.
- Task 4.2: GeSn-based photodetectors have been fabricated showing a detectivity D* 3 times below the specified target of ELICHENS. Modelling of PDs show good agreement with experimental results. Fabry-Perot resonance PDs have been fabricated showing an increase in the D* at specific wavelength.
- Task 4.3: GeSn-based APDs have been modelled and APDs lasers thicknesses and associated doping has been given.
- Task 4.4: First GeSn APDs has been fabricated.
- Task 4.5: Modelling of passive PIC has started and first GeSn/Ge PIC fabricated.
The results of the WP5 in the first reporting period :
Assembly strategies of discrete GeSn devices for gas sensors and liquid sensors have started to be discussed. ELICHENS and Diafir have prepared test set up which permit to validate the use of the component for their application. Commercial LEDs at 3.3 µm delivered to DIAFIR for first tests.
The results of the WP6 in the first reporting period :
- Task 6.1: the deliverable D6.1 dissemination and communication tools has been submitted.
- Task 6.2: the timeline for LASTSTEP dissemination and communication has been given in the deliverable 6.3. A workshop on GeSn has been organized in the framework of LastStep by POLIMI during the ICS/ISTDM 2023 conference
- Task 6.3: Scientific publications and conferences have been listed in the task.
- Task 6.4: A project website, a visual identity, twitter and LinkedIn accounts have been created. Production of a video presenting LastStep activities.
- Task 6.5: First contact to cluster dissemination activities around mid-infrared sensing.
- Task 6.6: The deliverable D6.1 on the initial version of exploitation plan is submitted.
The results of the WP7 in the first reporting period :
- Task 7.1: Submission of the D7.1 on the collaborative platform and management handbook.
- Task 7.2: The project management proceeds smoothly. The monthly Steering Committee meetings are usually attended by at least a representative of each partner, and interactive discussions take place. Any delay is anticipated by the partner(s) in question and alternative action plans are discussed with the WP leader and/or the coordinator.
- Task 7.3: Reporting activities are on track. D7.3 on initial risk of management & data management plan report submitted at M18
- Task 7.4: Submission of the D7.2 on LastStep data management plan.
For the last period, electrically pumped GeSn lasers have been acheived by two partners of the consortium. LEDs and PDs with a band-gap at 3.3 µm have been fabricated. Tests are on going to detect methane.