group-IV LASer and deTectors on Si-TEchnology Platform

Project Information

LASTSTEP

Grant agreement ID: 101070208

DOI

10.3030/101070208

EC signature date 8 December 2022

Start date 1 January 2023

End date 30 June 2026

Funded under

• Digital, Industry and Space

Total cost

€ 4 181 092,75

EU contribution

€ 4 181 092,00

Coordinated by

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Data Management Plan (1)

Data Management Plan

Documents, reports (2)

Project website
Communication and dissemination tools

Publications

Peer reviewed articles (9)

Room Temperature Lattice Thermal Conductivity of GeSn Alloys

Author(s): Omar Concepción, Jhonny Tiscareño-Ramírez, Ada Angela Chimienti, Thomas Classen, Agnieszka Anna Corley-Wiciak, Andrea Tomadin, Davide Spirito, Dario Pisignano, Patrizio Graziosi, Zoran Ikonic, Qing Tai Zhao, Detlev Grützmacher, Giovanni Capellini, Stefano Roddaro, Michele Virgilio, Dan Buca
Published in: ACS Applied Energy Materials, Issue 7, 2024, ISSN 2574-0962
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acsaem.4c00275

Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs

Author(s): L. Casiez, C. Cardoux, P. Acosta Alba, N. Bernier, J. Richy, N. Pauc, V. Calvo, N. Coudurier, P. Rodriguez, O. Concepción, D. Buca, M. Frauenrath, J.M. Hartmann, A. Chelnokov, V. Reboud
Published in: Materials Science in Semiconductor Processing, Issue 182, 2024, ISSN 1369-8001
Publisher: Elsevier BV
DOI: 10.1016/j.mssp.2024.108654

Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry

Author(s): J.M. Hartmann, T. Marion
Published in: Materials Science in Semiconductor Processing, Issue 169, 2023, ISSN 1369-8001
Publisher: Elsevier BV
DOI: 10.1016/j.mssp.2023.107893

Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm

Author(s): Lorenzo Finazzi, Raffaele Giani, Omar Concepción, Dan Buca, Vincent Reboud, Giovanni Isella, Alberto Tosi
Published in: IEEE Journal of Selected Topics in Quantum Electronics, Issue 31, 2024, ISSN 1077-260X
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/JSTQE.2024.3439495

Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys

Author(s): Andrea Quintero, Pablo Acosta Alba, Jean-Michel Hartmann, David Cooper, Patrice Gergaud, Vincent Reboud, Philippe Rodriguez
Published in: IEEE Journal of the Electron Devices Society, Issue 11, 2023, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/JEDS.2023.3332094

Isothermal Heteroepitaxy of Ge_1–<i>x</i>Sn_<i>x</i> Structures for Electronic and Photonic Applications

Author(s): Omar Concepción, Nicolaj B. Søgaard, Jin-Hee Bae, Yuji Yamamoto, Andreas T. Tiedemann, Zoran Ikonic, Giovanni Capellini, Qing-Tai Zhao, Detlev Grützmacher, Dan Buca
Published in: ACS Applied Electronic Materials, Issue 5, 2023, ISSN 2637-6113
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acsaelm.3c00112

Advances in GeSn alloys for MIR applications

Author(s): V. Reboud, O. Concepción, W. Du, M. El Kurdi, J.M. Hartmann, Z. Ikonic, S. Assali, N. Pauc, V. Calvo, C. Cardoux, E. Kroemer, N. Coudurier, P. Rodriguez, S.-Q. Yu, D. Buca, A. Chelnokov
Published in: Photonics and Nanostructures - Fundamentals and Applications, Issue 58, 2024, ISSN 1569-4410
Publisher: Elsevier BV
DOI: 10.1016/j.photonics.2024.101233

Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics

Author(s): D. Grützmacher, O. Concepción, Q.-T. Zhao, D. Buca
Published in: Applied Physics A, Issue 129, 2023, ISSN 0947-8396
Publisher: Springer Science and Business Media LLC
DOI: 10.1007/s00339-023-06478-4

Thermal conductivity of GeSn alloys: a CMOS candidate for energy harvesting applications

Author(s): Jhonny Tiscareño Ramirez, Salvador Gallardo Hernandez, Oliver Krause, Omar Concepción, Detlev Grützmacher, Dan Buca
Published in: Revista Tecnología en Marcha, 2024, ISSN 2215-3241
Publisher: Instituto Tecnologico de Costa Rica
DOI: 10.18845/tm.v37i5.7218

Conference proceedings (2)

Innovative Annealing Technology for Thermally Stable Ni(GeSn) Alloys

Author(s): Andrea Quintero, Pablo Acosta Alba, Jean-Michel Hartmann, Patrice Gergaud, Vincent Reboud, Philippe Rodriguez
Published in: 2023 21st International Workshop on Junction Technology (IWJT), Issue 269, 2024
Publisher: IEEE
DOI: 10.23919/IWJT59028.2023.10175097

Enhancing the Detectivity of Direct Bandgap Ge_0.86Sn_0.14 Photodiodes by Layer Transfer

Author(s): C. Cardoux, E. Kroemer, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, S. Assali, J.M. Hartmann, N. Coudurier, P. Rodriguez, J. Chrétien, J. Widiez, O. Gravrand, A. Chelnokov, V. Reboud
Published in: 2024 IEEE Silicon Photonics Conference (SiPhotonics), Issue 8, 2024
Publisher: IEEE
DOI: 10.1109/SiPhotonics60897.2024.10544244