There are 4 specific objectives defined for the TRIUMPH project: (1) very high efficiencies, (2) cost-effective and scalable technology, (3) design for sustainability, and (4) value chain buy-in. The activities of the project in the first reporting period have addressed all these objectives to varying extents, but mostly devoted to this first and third objectives. The related WPs are WP3, 4 and 5 and Task 7.2. Activities in WP6 and all of WP7 except T7.2 are just starting up or yet to start, while WP8 is focussed mainly on data collection and preparing the framework for the analyses to be done in the remaining part of the project. Towards objective 1, the main achievements so far can be summarized as follows. A comprehensive opto-electrical model has been developed, which provides directions for the optimal bandgap and thicknesses for the top and middle Pk absorbers. This model predicted that the practical efficiency limit of Pk/Pk/Si 3J cells is 44.3%, assuming ideal electrical properties. Based on this, the building blocks of the 3J cell, i.e. the top, middle and bottom sub-cells were developed. In particular, a relatively photostable Pk absorber with an appropriate bandgap of 1.8 eV has been achieved. High-performant and stable middle and top cells, with appropriate bandgap as recommended by the modeling, have been realized. Putting these building blocks together, 3J cells with the best efficiency of 23.4% have been attained so far, which improved on the state-of-the-art of 12.7% before the start of the project. For evaluating and reporting the performance of 3J devices correctly, a reliable methodology for measuring the JV and EQE characteristics of 3J devices has also been established. Towards objective 2, upscalable technologies for Pk deposition are in development, and upscale routes for 3J modules have been identified. Towards objective 3, the main activities so far are the following. Considering the deployment of 3J technology in the TW-era, AZO as a replacement for scarce indium-containing TCOs has been developed using both spatial ALD and magnetron sputtering, with the latter even on a non-heated substrate (suitable for use on Pk materials). At module level, release encapsulant technology that was demonstrated previously for Si modules is being extended to tandem and 3J technology, whereby an encapsulated module can be triggered to release on demand, when using the release encapsulant. A release encapsulant laminated at low temperatures (< 150°C) has shown sufficient adhesion in the non-triggered state (more than 2x the 20 N/cm threshold), while demonstrating residue-free release upon triggering. Towards objective 4, all industrial partners have contributed to the project activities in this period. RENA provided additives to IMEC to achieve sub-micron Si texturing. Dyenamo expanded their portfolio of self-assembled monolayer (SAMs) for use as interface passivation to >20 types (called Dyenamo’s SAM factory) and made them available to consortium partners. VA worked on AZO by magnetron sputtering on non-heated substrates. SALD developed a spatial ALD recipe for AZO at 230 °C so far.