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Understanding and Engineering Resistive Switching towards Robust Neuromorphic Systems

Project description

Advancing technology for efficient brain-inspired computing

Neuromorphic computing is a branch of computer science and engineering that draws inspiration from the architecture and functioning of the human brain to design and build more efficient and brain-like computing systems. Memristor devices portray the ability to emulate synapses in biological systems and have thus sparked interest in their use for neuromorphic computing. Funded by the European Research Council, the RobustNanoNet project aims to address performance issues of memristors by enhancing resistive switching technology. Researchers will develop devices with new materials, test their performance and explore their use in advanced computing systems for machine learning. The goal is to create a dependable technology for efficient and reliable brain-inspired computing.

Objective

Resistive switching refers to the controlled change in resistance of an electronic material, e.g. metal oxide, via the creation and modulation of nanoscale filaments. Although its physics is not yet fully understood, resistive switching devices (called memristors) are promising as efficient artificial synapses in neuro-inspired computing systems. However practical challenges exist. Current devices excel in only a few of the performance metrics necessary for circuit and system integration. Moreover, they exhibit non-idealities causing neuromorphic systems using these devices to have low performance. The project will address this key issue by pursuing device-system co-optimization across four objectives, aiming to engineer a single “hero” resistive switching technology with all the desired metrics. Aim 1 will develop resistive switching devices based on a new class of materials with broad compositional space, called high entropy oxides. Promising compositions will be fabricated in a high throughput fashion. In Aim 2, a proposed characterization method via a state-of-the-art mid-infrared laser will help understand in-operando the filamentary switching at nanoscale and uncover the physical mechanisms behind its non-idealities. The fabrication and characterization will iteratively target a broad range of performance metrics. Some metrics can only be quantified across a population of devices, so Aim 3 will integrate the optimized devices on transistor circuitry for benchmarking at scale. Aim 4 targets the applicability of these devices to next generation neuromorphic systems for machine learning training. Preliminary work on a multi-layer neural network validated this concept and indicated the need for co-optimization, as proposed. RobustNanoNet will address the interdisciplinary challenges towards a reliable resistive switching technology to support robust neuromorphic systems for energy efficient computing.

Host institution

INSTITUTUL NATIONAL DE CERCETAREDEZVOLTARE PENTRU MICROTEHNOLOGIE
Net EU contribution
€ 2 446 250,00
Address
EROU IANCU NICOLAE STREET 32B
077190 Voluntari
Romania

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Region
Macroregiunea Trei Bucureşti-Ilfov Ilfov
Activity type
Research Organisations
Links
Total cost
€ 2 446 250,00

Beneficiaries (1)