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Mastering Electronic Doping in Tin-Halide Perovskites to Develop Near Infrared Light Emitting Diodes

Project description

Advancing near-infrared LED technology

Near-infrared light-emitting diodes (NIR-LEDs) are crucial for various everyday uses but face a hurdle: while LEDs below 800 nm have improved, those above 800 nm lag behind due to limitations in emitters. Tin-halide perovskites (THPs) show promise for NIR-LEDs, but issues such as excessive p-type doping hold them back. With the support of Marie Skłodowska-Curie Actions, the MaDLED project aims to address these challenges by boosting carrier injection and recombination efficiency. Led by the Istituto Italiano di Tecnologia, Italy, MaDLED integrates materials science and optical-electronic spectroscopies to advance NIR-LED technology in line with the European Green Deal.

Objective

As a key advancing technology, near-infrared light-emitting diodes (NIR-LEDs) cover nearly all aspects of our daily life due to their supported large applications, such as biomedical imaging, optical communication, security, and data storage. With extensive efforts, the efficiencies of LEDs have been improved by over 20% in the emission range below 800 nm. However, the development of NIR-LEDs over 800 nm is modest due to the fundamental limitation of emitters. Recently, tin-halide perovskites (THPs) have emerged as one of the most promising candidates for NIR-LED application. Through easy composition engineering, the emission of THPs can be readily tuned from 680 nm to 1000 nm. Meanwhile, the low-toxic Sn-based perovskites follow the requirements of the European Green Deal, which ask for reducing pollution to enhance the protection of human life, animals, and plants. However, the excessively high p-type doping in THPs, which reduce the carrier injection efficiency and radiative recombination efficiency, currently limits the development of THP-based NIR-LEDs. This project (MaDLED) will promote the development of NIR-LEDs by developing novel strategies to increase carrier injection and recombination efficiency. The results of this project will advance the knowledge about NIR emissive semiconductors, and be of value in other fields, such as solar cells, detects, transistors, etc. This will be achieved by integrating deep knowledge of materials science with expertise in advanced optical-electronic spectroscopies in the host (Istituto Italiano di Tecnologia, Italy). Besides, a secondment (Helio Display Materials, United Kingdom) is planned to define a suitable route to industrialization. After training in this project, I will have an increased set of research and transferable skills and competencies, which is critical to enhancing my employability and career prospects.

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Coordinator

FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA
Net EU contribution
€ 188 590,08
Address
VIA MOREGO 30
16163 Genova
Italy

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Region
Nord-Ovest Liguria Genova
Activity type
Research Organisations
Links
Total cost
No data

Partners (1)