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2D Heterostructure Non-volatile Spin Memory Technology

Project description

2D quantum materials for fast and energy-efficient spintronic memory technology

Faster and more energy-efficient electronics are needed to keep up with the ever-increasing use of information technology, but conventional materials have reached their limits. To address this, the EU-funded 2DSPIN-TECH project aims to create a spintronic memory device platform from quantum materials for the next generation of memory technologies. The concept is based on emerging 2D heterostructures of magnetic and spin-orbit materials that are expected to be faster and more energy efficient than current technologies. The project will use novel methods to control their spin-orbit torque properties and harness electron spin to develop technologies for low-power, non-volatile, ultrafast and scalable data storage and processing devices.

Objective

In modern society, as the use of information technology is rapidly increasing, it is necessary to develop new non-volatile, faster, and energy-efficient electronics. Spintronic technologies open promising routes to achieve this. However, devices based on conventional materials are still too inefficient for applications in consumer electronics. Here, we propose to develop a new energy-efficient spintronic memory device platform based on emerging atomically-thin two-dimensional (2D) quantum materials for the next generation of memory technologies. The 2D topological spin-orbit materials can generate a giant current-induced spin polarization, whereas room temperature 2D magnets provide the prospective of electric control of magnetism. The proposed van der Waals heterostructure spintronic devices consisting of 2D topological spin-orbit materials and 2D magnets will enable exceptionally efficient spin-orbit torque (SOT) functionality with low current densities and ultrafast magnetization switching speed.

All-2D multifunctional SOT will provide a strong synergy between spintronics and 2D material and take this research from TRL2 to 4. We will employ novel methods to control their SOT properties – by the twist angle between the layers, topological aspects, crystal symmetries, proximity interaction, and strong electric field effects. To achieve this challenging goal, this project brings
together pioneering and world-leading experimental and theoretical researchers and a company in the field of spintronics and 2D materials in Europe. The ultimate demonstration of all-2D SOT device units will merge the field of spintronics and twistronics, allowing for physical and electrical tuning parameters to achieve enhanced control over the device functionalities. These developments will enable groundbreaking 2D SOT technologies for low-power, non-volatile, ultrafast, and scalable data storage and processing devices and possibly new spin-based computing paradigms and architectures.

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Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-RIA - HORIZON Research and Innovation Actions

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Call for proposal

(opens in new window) HORIZON-CL4-2023-DIGITAL-EMERGING-01-CNECT

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Coordinator

CHALMERS TEKNISKA HOGSKOLA AKTIEBOLAG
Net EU contribution
€ 1 186 861,00
Address
-
412 96 Goteborg
Sweden
Region
Södra Sverige Västsverige Västra Götalands län
Activity type
Higher or Secondary Education Establishments
Links
Total cost
€ 1 186 861,25

Participants (5)

Partners (1)