Observation of fully recoverable leakage behaviour in HfO <sub>2</sub> gate oxide of WS <sub>2</sub> 2D FETs induced by local mechanical stress
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Author(s):
Kavita Vishwakarma, Ben Kaczer, Quentin Smets, Luca Panarella, Anastasiia Kruv, Tom Schram, Mario Gonzalez, Oguzhan Orkut Okudur, Yao Yao, Ingrid De Wolf
Published in:
2D Materials, Issue 12, 2025, ISSN 2053-1583
Publisher:
IOP Publishing
DOI:
10.1088/2053-1583/AE03D4
Vertical Compressive Stress in Fab-Integrated WS2 FETs: An In Situ Electrical and Nanoindentation-Based Study
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Author(s):
Kavita Vishwakarma, Mario Gonzalez, Quentin Smets, Luca Panarella, Fateme Yekefalah, Tom Schram, Oguzhan Orkut Okudur, Ben Kaczer
Published in:
ACS Applied Electronic Materials, 2026, ISSN 2637-6113
Publisher:
American Chemical Society (ACS)
DOI:
10.1021/ACSAELM.6C00701