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Designing multiferroic double perovskites Bi2BB'O6 for next-generation MagnetoElectric meMOries

Project description

Optimising next-gen magnetoelectric memories with multiferroic double perovskites

The increased power demand of the internet of things and AI necessitates a major shift in computer hardware. Current complementary metal-oxide-semiconductor transistors are nearing their scalability limit. Meanwhile, interest has turned to electric-field control of magnetism through multiferroics as promising alternatives. This prompted the recent development of magnetoelectric spin-orbit (MESO) devices designed to create low-power and dimensionally-scalable transistors. However, their architecture relies on the room-temperature multiferroic compound BiFeO3 whose weak magnetoelectricity causes the MESO device to display nondeterministic behaviour. With the support of the Marie Skłodowska-Curie Actions programme, the DesMEMO project proposes to design bismuth-based double perovskites capable of combining room-temperature ferroelectricity with ferro- or ferrimagnetism as reliable replacements for BiFeO3 to optimise memory in MESO devices.

Objective

Computers and electronic devices are essential, but the emerging concepts such as the Internet of Things (IoT) and artificial intelligence (AI), demand substantial power. Thus, a significant shift in computer hardware is necessary. However, Moore's law, which has driven microelectronics by scaling complementary metal-oxide-semiconductor (CMOS-) transistors, is reaching its limit. Therefore, encoding information in collective order parameters using innovative materials and architectures becomes crucial for future advancements.

Among the proposed approaches, electric-field control of magnetism through multiferroics stands out as the most promising pathway. In 2019, Intel proposed magnetoelectric spin-orbit (MESO) devices aiming to create low-power and dimensionally-scalable transistors that address the limitations of CMOS-based technology. Limited by the rarity of room-temperature multiferroics, this architecture primarily relies on the ferroelectric/antiferromagnetic compound BiFeO3. However, when Intel with CIC nanoGUNE realized the first complete MESO device in 2024, the device exhibited non-deterministic behavior due to the weak magnetoelectricity of BiFeO3. This highlights the urgent need for replacing BiFeO3 and achieve reliable performance in MESO devices.

This research proposal aims to design bismuth-based double perovskites (Bi2BB’O6) as reliable alternatives to BiFeO3 for magnetoelectric memories. These materials uniquely combine room-temperature ferroelectricitywith ferro- or ferrimagnetism. The proposed compound will also simplify MESO memory structures. This experimental project will leverage advanced thin film growth facilities, including Pulsed Laser Deposition (PLD) and sputtering techniques to stabilize and engineer these materials. The approach combines scanning probe microscopy and synchrotron-based spectroscopy and imaging to optimize their magnetoelectric response, ultimately ensuring the successful realization of these devices.

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HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

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(opens in new window) HORIZON-MSCA-2024-PF-01

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Coordinator

UNIVERSITY OF LEEDS
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 272 799,92
Address
WOODHOUSE LANE
LS2 9JT Leeds
United Kingdom

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Region
Yorkshire and the Humber West Yorkshire Leeds
Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

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