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Functionalised Activated Sapphire Thin-disk (FAST)

Project description

Enhancing laser technology performance through activated sapphire thin-disk development

Optical materials are essential for technology. A new method in rapid pulsed laser deposition is enabling the fabrication of rare-earth doped sapphire. Exploiting enhanced thermo-optic properties, there is the potential to increase laser power by more than tenfold in Yb:sapphire thin disks compared to Yb:YAG thin disks. The EIC-funded FAST project will deliver breakthroughs that significantly enhance the performance of laser technology. The project also aims to address amplified spontaneous emission (ASE), which limits the power scalability of thin-disk lasers. By nanoengineering key surfaces of the Yb:sapphire active elements, their optical properties will be modified to mitigate parasitic ASE. This will enable the development of a new generation of thin-disk gain elements for extreme-power photon engines. FAST lasers will unlock new opportunities in space science.

Objective

Optical materials are indispensable for modern society reliant upon technology to create and share information, fabricate advanced materials, and study the intricacies of our physical universe. Our Pathfinder science-to-technology breakthrough targets a paradigm shift for fabricating a novel optically active crystal – rare-earth (RE) doped sapphire. Sapphire is an exemplary material, second only to diamond in the Mohs hardness scale and 3rd in the list of the hardest natural minerals – importantly, 1st in this list that can incorporate RE ions into its lattice. In adopting a radically different non-thermal-equilibrium crystal-growth method, namely Rapid Pulsed Laser Deposition (RPLD) we capitalise on an order-of-magnitude higher deposition frequency than regular PLD and, in addition, exploit the ability to incorporate substantially more RE impurity than conventional crystal-growth techniques can achieve. With practically relevant doping concentrations RE-doped sapphire (REDS) promises a step change in critical properties for laser gain elements, especially Yb:sapphire thin disks. A greater than tenfold improvement in laser power is anticipated in like-for-like replacement of a state-of-the-art Yb:YAG thin disk with a Yb:sapphire one. However, we propose additional science-to-technology breakthroughs that will potentially offer a further order-of-magnitude performance enhancement. The first addresses Amplified Spontaneous Emission (ASE), a limit to power scaling thin-disk lasers, whereby we will nanoengineer key surfaces of the active elements to functionalise them and control their optical properties. Functionalising the activated sapphire promises ASE mitigation and aperture scaling opportunities for a new generation of thin-disk gain elements in extreme-power photon engines. FAST lasers, will open new technological opportunities in space science, high-value manufacturing, and transform future directions for laser technology for the rest of the 21st C.

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HORIZON-EIC - HORIZON EIC Grants

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(opens in new window) HORIZON-EIC-2025-PATHFINDEROPEN

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Coordinator

UNIVERSITY OF SOUTHAMPTON
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 1 280 367,25
Address
Highfield
SO17 1BJ SOUTHAMPTON
United Kingdom

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Region
South East (England) Hampshire and Isle of Wight Southampton
Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 1 280 367,25

Participants (4)

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