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UNderstanding and improving the efficiency of InGaN Red LEDs for micro-Display applications

Project description

The monolithic path to full-spectrum LEDs

While blue indium gallium nitride (InGaN) LEDs are efficient, red versions suffer from high indium content, causing lattice strain and defects that limit performance. Supported by the Marie Skłodowska-Curie Actions programme, the UNIRED project aims to overcome these obstacles by investigating defect-related limitations in InGaN nanowires. Through selective area molecular beam epitaxial growth, the project will control indium incorporation to achieve tunable red-green-blue emission. Innovative strategies, such as GaN shell encapsulation and low-indium buffer layers, will be used to suppress defects and enhance red emission efficiency. UNIRED will also benchmark its performance against industrial standards. This research is expected to enable true monolithic integration, paving the way for compact, energy-efficient, and high-resolution next-generation micro-LED displays.

Objective

Indium gallium nitride (InGaN) semiconductors have emerged as a highly promising material platform for the realization of high-performance red–green–blue (RGB) micro-light-emitting diode (μLED) displays within a single material family. However, there remains a disparity in performance, with blue InGaN LEDs demonstrating higher efficiency than their red counterparts. The problem arises from the high indium (In) content, which leads to lattice strain, defect generation, and quantum-confined Stark effect hindering the development of high-efficiency red InGaN μLEDs. UNIRED aims to investigate defect-related limitations and their suppression strategies in InGaN nanowires (NWs). Overcoming these challenges is critical to unlock full-spectrum RGB emission from a monolithic system. UNIRED addresses this bottleneck by systematically undertaking an in-depth analysis of the types and origins of defects in high-In InGaN nanostructures, their influence on optoelectronic properties, and mitigation routes to minimize non-radiative recombination losses. This comprehensive approach is designed to establish clear structure–property correlations and provide pathways to enhance red emission. The methodology combines diameter-dependent selective area molecular beam epitaxial growth with controlled In incorporation for tunable RGB emission. Axial GaN barriers, lateral GaN shell encapsulation, and a low-In buffer layer collectively suppress defects, relieve strain, and enhance the efficiency of red-emitting NW-based μLEDs. UNIRED further benchmarks the performance of its monolithic NW-based μLEDs against industrial-standard nanophosphor-based red μLEDs to provide a clear comparative framework. By pioneering this integrated strategy, UNIRED aims to overcome the efficiency limitations of red InGaN emitters, enabling true monolithic RGB integration. The outcomes will pave the way for compact, energy-efficient, and high-resolution next-generation μLED display technologies.

Fields of science (EuroSciVoc)

Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

(opens in new window) HORIZON-MSCA-2025-PF

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Coordinator

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
Net EU contribution
€ 242 260,56
Address
RUE MICHEL ANGE 3
75794 Paris
France
Region
Ile-de-France Ile-de-France Paris
Activity type
Research Organisations
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Total cost
No data

Partners (1)