Objectif
The general objective of the project was to develop advanced aspects of GaAs digital integrated circuit process technology and associated expertise to enable the fabrication of fast, high performance digital circuits. Demonstrator digital ICs have been developed to evaluate the performance of the various logic circuit technologies.
The general objective of the project was to develop advanced aspects of gallium arsenide digital integrated circuit process technology and associated expertise to enable the fabrication of fast, high performance digital circuits. Demonstrator digital integrated circuits (IC) have been developed to evaluate the performance of the various logic circuit technologies. There were some results at the technological level:
assessment of refractory metal gate metal semiconductor field effect transistor (MESFET) process;
in depth evaluation of electron resist;
demonstration of transistor effect in gallium indium arsenide/indium phosphide structures;
comparison between numeric model and experience for short gate metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT).
There were some good results at the technological level:
-assessment of refractory metal gate MESFET process
-in-depth evaluation of electron resist
-demonstration of transistor effect in GaInAs-InP structures
-comparison between numeric model and experience for short-gate MESFET and HEMT.
However, the major milestones on demonstrator circuits were missed and the overall objective of the project was not reached. Consequently the project was discontinued, but some effort has been made by the partners to achieve the missing milestones with their own resources.
Some of the successful tasks have been used to complement project232, leading to the launching of project843.
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