Objetivo This project involved six major European companies from three countries. The objective was to develop advanced GaAs integrated circuit technologies leading to the fabrication of high-performance integrated circuits addressing key memory and fast signal-processing functions. The availability of state-of-the-art GaAsICs will serve European system and equipment manufacturers in the IT and telecommunications industry and help to provide them with the necessary worldwide competitive edge. The project was broadly divided into high-complexity ICs using enhancement/depletion mode MESFET logic (STC, LEP, and Siemens), and high-speed ICs using depletion mode based MESFETs and HEMTs (Thomson, Plessey and GEC). GaAs heterojunction bipolar transistors (HBT) were also included in the latter part of the project to complement the MESFET and HEMT technologies. MESFET, HEMT and HBT technologies are in different stages of maturity, but many key technologies are shared, such as ion implantation, advanced lithography (Ebeam, deep UV and DSW), dry processing, selfalignment techniques and testing tools. These technologies were investigated in parallel, from device modeling to manufacturing capability.The objective was to develop advanced gallium arsenide integrated circuit technologies leading to the fabrication of high perfomance integrated circuits addressing key memory and fast signal processing functions.The project was broadly divided into high complexity integrated circuits (IC) using enhancement/depletion mode metal semiconductor field effect transistor (MESFET) logic and high speed ICs using depletion mode based MESFETs and high electron mobility transistors (HEMT). Gallium arsenide heterojunction bipoloar transistors (HBT) were also included in the latter part of the project to complement the MESFET and HEMT technologies.Key demonstrators of increasing complexity were produced and some of those achieved state of the art performances:low power consumption (220 mW) gallium arsenide IK static random access memory (SRAM) with access time in the range of 1.4 ns;4-stage serial multiplier using self aligned technology which can be clocked at over 800 MHz, equivalent to 1.25 ns/bit multiplication time;4:1 divider reaching 9.7 GHz clocking speed;4-bit analogue to digital converter (ADC) capable of 1 G sample/s with on chip sample and hold and error correction functions, with performance equivalent to the best 0.6 micron silicon emitter coupled logic (ECL) technology.Key demonstrators of increasing complexity were produced and some of those achieved state-of-the-art performances: low power consumption (220 mW) GaAs 1KSRAM with access time in the range of 1.4ns 4stage serial multiplier using self-aligned technologywhich can be clocked at over 800MHz, equivalent to 1.25 ns/bit multiplication time, 4:1 divider reaching 9.7GHz clocking speed, and finally, 4bitADC capable of 1Gsample/s with on-chip sample and hold and error correction functions, with performance equivalent to the best 0.6micron Si ECL technology. Exploitation The technology developed under this project is being exploited in different ways by each company in the consortium. Some have transferred it into their pilot lines to improve their commercial products or to add new products to their catalogue. Others haveapplied the technology in broader areas of IIIV semiconductors, such as optoelectronic integrated circuits, and have helped to accelerate their research activities. Finally, this project had led to over 40publications in international conferences and technical journals. Ámbito científico engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsignal processingnatural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloidsengineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunications Programa(s) FP1-ESPRIT 1 - European programme (EEC) for research and development in information technologies (ESPRIT), 1984-1988 Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador BNR Europe Ltd Aportación de la UE Sin datos Dirección London Road CM17 9NA Harlow Reino Unido Ver en el mapa Coste total Sin datos Participantes (6) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo FARRAN TECHNOLOGY LTD Irlanda Aportación de la UE Sin datos Dirección BALLINCOLLIG X CORK Ver en el mapa Coste total Sin datos GEC Plessey Semiconductors plc Reino Unido Aportación de la UE Sin datos Dirección Caswell NN12 8EQ Towcester Ver en el mapa Coste total Sin datos GEC-Marconi Materials Technology Ltd Reino Unido Aportación de la UE Sin datos Dirección Elstree Way WD6 1RX Borehamwood Ver en el mapa Coste total Sin datos Laboratoire d'Électronique Philips Francia Aportación de la UE Sin datos Dirección 22 avenue Descartes 94453 Limail-Brevannes Ver en el mapa Coste total Sin datos Siemens Nixdorf Informationssysteme AG Alemania Aportación de la UE Sin datos Dirección Otto-Hahn-Ring 6 81739 München Ver en el mapa Coste total Sin datos Thomson CSF Francia Aportación de la UE Sin datos Dirección 38 rue Vauthier 92100 Boulogne-Billancourt Ver en el mapa Coste total Sin datos