Objetivo
The objective of the present project is to fabricate and to study GaN-based heterostructure laser diodes grown by homoepitaxy on GaN substrates and emitting in the blue to near UV region. The growth of single crystal GaN substrates and the development of the most appropriate epitaxial growth technique and identification of the most suitable heterostructure represents the hard core in this study, which we expect will pave the way to a new generation of GaN based optoelectronic devices.
To reach the final goal of producing GaN based lasers, MOVPE and GSMBE growth techniques will be used in this programme with specific goals. The most appropriate epitaxial technique will be kept for the laser structure fabrication.
Solid state lasers operating in the blue and near U.V. spectral range will be key components in many important application areas. These areas include, but are not limited to, high-density optical storage systems such as CD-ROMs and compact disks, high resolution laser printers, digital imaging, visible holography, optical memories, optical computers and medical applications. The frequency doubling of existing high-power near infrared lasers, which is the competing technology, is necessarily bulkier, less efficient and more expensive than direct emission of light from a laser diode at the desired wavelength. Red, green and blue constitute the set of primary colours from which any desired colour can be obtained by colour-mixing as in the RGB phosphor matrix of a colour-TV screen.
Ámbito científico
Convocatoria de propuestas
Data not availableRégimen de financiación
CSC - Cost-sharing contractsCoordinador
06560 Sophia Antipolis
Francia