Objective
The global objectives and anticipated results of the project are:
1 To prove the efficiency of the conformal growth technique to integrate monolithically high quality GaAs-based light emitting devices on silicon.
2 To examine and improve the compatibility between the conformal growth technique and the standard silicon CMOS processing, the conservation of performances of the silicon ICs being a main goal.
3 In case of partial compatibility, to evaluate accurately the required modifications on silicon ICs design and technology in order to decide on further industrial development of this integration technique.
This project deals principally with the realisation of the building block of future optically interconnected systems, i.e. GaAs light emitting devices integrated with their silicon drivers. A monolithic integration method, based on the use of the new conformal epitaxy technique, will be developed.
In a first two-year step, the monolithic integration will be studied and validated through the completion of three works, leading to a LED + driver demonstrator:
- Silicon drivers compatible with the requirements of conformal epitaxy (specific geometry, eventually misoriented substrates, aluminium metallisations postponed after III-V growth) will be designed, processed, and their performances accurately evaluated before and after the integration process.
- High quality GaAs layers will be grown on these drivers using conformal epitaxy. The conformal procedure will be improved in order to increase its compatibility with the technology and high performances of silicon ICs. Special efforts will be devoted to decrease the presently used substrate misorientation and temperatures of substrate preparation and growth.
- These layers will then be used as substrates on which the subsequent growth and process of GaAs-based light emitting devices will be optimised. Low-power consuming microcavity LEDs will be integrated: performances and reliability comparable with homoepitaxial devices will be researched.
In a third year, the future exploitation of the results of the project will be prepared through two parallel works, aiming at improving the compatibility between monolithically integrated devices and back-end technology:
1 the influence of a multi-Al-levels back-end technology on the performances and reliability of integrated devices will be accurately studied; required evolutions of technology or design will be identified.
2 the implementation of local interconnects inside the drivers will be studied in order to facilitate the back-end technology and to resolve eventual problems like frequency limitation or serial access resistance.
Once the goals of this project achieved, the monolithic integration technique could be used to integrate various optoelectronic devices on complex optically interconnected systems. Nevertheless, the development of industrial III-V epitaxial equipments compatible with large substrates (at least 6" or 8") will be useful to fully exploit the results obtained and the demonstrated potentialities of the conformal growth technique. A specific action could be decided in that way at the end of the first two-year if valuable.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
- natural scienceschemical sciencesinorganic chemistrypost-transition metals
- natural sciencesmathematicspure mathematicsgeometry
- natural scienceschemical sciencesinorganic chemistrymetalloids
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Call for proposal
Data not availableFunding Scheme
CSC - Cost-sharing contractsCoordinator
75 008 Paris
France