Objective
The prime objective of the project is to use a present silicon CMOS production facility to fabricate quantum devices which have the potential for ultra-high speed and functional operation. The devices are resonant tunnelling diodes (RTDs) and velocity modulation transistors (VMTs).
The results from the manufactured devices combined with theoretical modelling of such structures will demonstrate the potential for implementation of each device on present silicon production lines. A four pronged collaborative approach is proposed with work on
- growth of material
- fabrication of devices
- characterisation
- modelling.
If successful, it would allow industry to increase performance by changing the architectures of the chips in the present silicon fabrication plants rather than scaling the present architectures.
The diminutive sizes in the direction of carrier transport of RTDs allows ultra-high speed operation. RTDs in the III-V systems have already shown oscillations in sub-millimetre wave frequencies (710GHz). Negative differential conductivity allows a large number of high speed functional devices to be designed. For example, signal processing circuits with significantly reduced number of devices (and hence smaller real-estate on chips) and multiple valued memory cells using RTDs have been proposed and demonstrated in III-V systems. These functional applications are highly promising since RTDs with their simple structure and small size may easily be integrated with conventional devices such as field effect transistors and bipolar devices. We propose to demonstrate RTDs in Si/SiGe and also one of the simplest functional uses, a cascade RTD memory. A novel gating technique will be investigated to electrostatically squeeze RTDs, creating single electron transistors.
Velocity modulation transistors (VMTs) are novel, double-layer systems where manipulation of the wave function allows electrons to be switched between spatially separated channels of different mobilities, potentially offering ultra high speed operation as the switching speed is not limited by the gate source capacitance. This is a device which offers one possible method of surmounting the ultimate capacitive speed limitation imposed on all field effect transistors. Front- and back-gates are used to move the electrons from one channel to the other without charging. The electrons have either high or low velocity depending on the mobility of the quantum well they are in and this provides the two distinct states for transistor action. The VMT is essentially a normal MODFET on top of an inverted MODFET with a difference in mobility between the two structures and a small energy barrier between the two quantum wells.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- engineering and technology electrical engineering, electronic engineering, information engineering electronic engineering signal processing
- natural sciences chemical sciences inorganic chemistry metalloids
You need to log in or register to use this function
Keywords
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Data not available
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Coordinator
CB2 1TN CAMBRIDGE
United Kingdom
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.