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Signatures of few-body correlations in semiconductor quantum nanostructures

Objectif

Technological advancements in the nanofabrication of semiconductor quantum devices has made it possible to realize confined few-electron systems, the so-called artificial atoms, within unprecedented correlation regimes. Experimental signatures, which seem to be evidence of few-body phenomena induced by electron correlation are accumulating thanks to very recent experiments.

Such investigations are strongly triggered by the possibility to use this type of electron-based devices as the basis for future electronic technologies. In particular, quantum dots based devices are at the heart of several proposal for solid-state implementations of quantum gates. In this project few-body phenomena in the highly correlated regimes, which are currently being achieved in several classes of semiconductor quantum dots will be addressed.

In particular, state-of-the-art, full Configuration Interaction methods developed in the host institution will be used to simulate both transport and light scattering experiments performed by experimental partners of the host institution. Quantum dot systems, which will be simulated will have a counterpart in the experimental activities present in literature, or will be chosen as to suit specific issues in the quantum computation context.

This activity will put the applicant researcher at the centre of a large theoretical-experimental collaboration in one of the most challenging and active field of current research in semiconductor physics, with important implications for future technologies.

Champ scientifique (EuroSciVoc)

Thème(s)

Appel à propositions

FP6-2004-MOBILITY-5
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Régime de financement

SCF - Marie Curie actions-Series of events

Coordinateur

CONSIGLIO NAZIONALE DELLE RICERCHE
Contribution de l’UE
Aucune donnée
Coût total
Aucune donnée