Objective
to perform exploratory work on new device architectures suitable for the 0.13 micron CMOS generation
to consider the introduction of new materials in a standard CMOS process flow
to compare the various technological solutions against the target specifications
This project is an exploratory work on advanced MOSFET architectures suitable for the 0.13 micron CMOS generation. Technically speaking, this project focuses on the optimisation of the device architecture (e.g. Ground Plane), the emerging new materials (e.g. SiGe, TiN, Ta2O5, etc.) and the evaluation of various technological solutions against the end-user defined specifications. The project is divided into four workpackages: Channel Engineering, Gate Engineering, S/D Engineering and Device Specifications.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
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Call for proposal
Data not availableFunding Scheme
CSC - Cost-sharing contractsCoordinator
94250 Gentilly
France