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Blue Femtosecond Laser Implemented with Group-III Nitrides

Descripción del proyecto


FET Open

The goal of the project is to create a new technology base for ultrafast semiconductor laser diode devices producing femtosecond optical pulses in the blue and violet spectral range. Based on advanced group-III nitride epitaxial growth and device fabrication techniques, we will develop novel InGaN/GaN laser diode structures producing femtosecond pulses in the Dicke superradiance and modelocking regimes. To achieve this goal we will investigate several group III-nitride heterostructures and optical cavity designs operating in three different dynamic regimes. This new technology will lay the foundation for miniature portable femtosecond lasers in the blue-violet that will replace traditional sources like mode-locked frequency doubled Ti: Sapphire lasers, Xenon and dye lasers. It will enable numerous new techniques and developments in the fields of ultrafast optical spectroscopy, high-resolution lithography, quantum optics, optical comb frequency standards, fluorescence decay analysis and biomedical diagnostic to be used without bulky laboratory installations.

Ámbito científico (EuroSciVoc)

Programa(s)

Tema(s)

Convocatoria de propuestas

FP7-ICT-2009-C
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Régimen de financiación

CP - Collaborative project (generic)

Coordinador

CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA - RECHERCHE ET DEVELOPPEMENT
Aportación de la UE
€ 519 114,00
Dirección
RUE JAQUET DROZ 1
2000 Neuchatel
Suiza
Región
Schweiz/Suisse/Svizzera Espace Mittelland Neuchâtel
Tipo de actividad
Research Organisations
Enlaces
Coste total
Sin datos

Participantes (5)