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Content archived on 2024-05-14

GAAS high index substrates for optoelectronics

Objective

The objective of this project is to demonstrate that high efficiency, low threshold current, tunable, medium power lasers can be obtained on (111)B GaAs substrates, and that these lasers can also cover the 1.0-1.3 microns range. The material system GaInAs/AlGaAs/GaAs (100) reaches its limits around 1.06-1.1 microns, due to limitations associated to the appearance of dislocations in the strained InGaAs Quantum Well (QW) (Critical Layer Thickness, CLT, limit).

The use of (111)B GaAs substrates allows to increase the critical thickness for PseudoMorphic InGaAs QW's. We plan to investigate the maximum reachable wavelength from strained InGaAs QW's grown on (111) GaAs substrates. Besides, this orientation offers a different valence band structure, that will allow to lower the lasing threshold current. High quantum efficiency is also expected because of the lower non-radiative recombination rates in this orientation. As another novelty, we plan to develop Bragg reflectors on (111)B GaAs substrates, to reduce the spontaneous radiative recombination, and thus to further lower the threshold current of such a laser diode. Another novel concept offered by (111) lasers is tunability, due to the presence of the piezoelectric field in strained quantum wells grown on polar orientations, this field being maximum for (111) orientations. The screening of the piezoelectric field can be used to adjust the wavelength by controlling the losses. We plan a practical approach to realise tunable lasers based on this principle.

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ACM - Preparatory, accompanying and support measures

Coordinator

UNIVERSIDAD POLITECNICA DE MADRID
EU contribution
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Address
Ramiro de Maeztu, 7
28040 MADRID
Spain

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Total cost

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