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Silicon compatible opto-electronics

Objectif

The objective of this project is to demonstrate the feasibility of integrated optoelectronic devices in silicon. In particular, the optimisation of the performances of light sources, devices for signal handling (waveguides, optical amplifiers, switches, etc.) and detectors realised with VLSI-compatible Si technology will be carried out. Moreover, the possibility of integrating the different components within a single chip will be investigated.

The SCOOP partners are thoroughly convinced that the combination of the excellent capability of information processing guaranteed by the electronic functions of silicon together with the unrivalled properties of information transmission by optocommunication will lead to useful commercial devices, wherever this technology can be demonstrated. It is the conviction of the SCOOP partners that silicon technology will remain the undisputed leader in microelectronics for many decades. We believe that some optocommunication functions may be realised in full compatibility with silicon VLSI technology. At present, we are working on five different functions: light sources, modulators, amplifiers, waveguides and detectors. The SCOOP partners have combined their strengths, skills and resources to develop their full synergetic power in one common project.

We will mainly focus on the development of optoelectronic circuits operating at 1.54 µm. Since we have already developed efficient Er-doped Si LEDs and optical amplifiers, the final goal will pursued by:

- Improvement of the design of the discrete optical functions aimed to: a) achieve better performances in terms of efficiency and miniaturization; b) guarantee mutual compatibility, a necessary step towards integration.
- Achievement of wavelength compatibility between the different devices by developing and demonstrating a Si-based detector operating at 1.54 (m.
- Development and improvement of interconnections between the different discrete optical functions by designing, fabricating and integrating optical waveguides and by developing an electrooptic perovskite Mach-Zehnder modulator on silicon.
- Realisation of Si-based integrated optoelectronic circuits operating at 1.54 (m comprising several different discrete optoelectronic functions within the same chip.

As an additional outcome of the main stream, the development of an efficient Si LED, coupled to a low loss waveguide, will naturally lead to the assessment of the feasibility of an Er-doped Si laser.

In conjunction with this main stream we will also investigate the performances of some optoelectronic devices operating at visible wavelengths. This activity will benefit from the fact that efficient detection in the visible has already been demonstrated and some of the waveguides as well as modulators, developed in the main stream activity for 1.54 µm are also compatible with visible operation. A visible light source will be developed using impact excitation of proper rare-earth ions (Tb3+) as a natural extension of the work already demonstrated in Er-doped Si MOS structures.

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Coordinateur

Consiglio Nazionale Delle Ricerche
Contribution de l’UE
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Adresse
Piazza Aldo Moro 7
00185 Roma
Italie

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