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Electrical Transport Parallel and Perpendicular to Semiconductor Heterointerfaces

Objective

The aim of this Group is to coordinate the research activity of the partners around a common theme focusing on electronic transport in heterostructure devices. The activity will involve both experimental and theoretical work, and will try to achieve a better understanding of carrier transport properties in electronic devices such as HEMTs and HBTs. Simulation tools based on Hydrodynamical and Monte Carlo approaches will be used for the modelling of the devices.
Research is centred on a combined experimental and theoretical investigation of electronic transport in heterojunction devices, both along and across heterointerfaces. The main objective is to reach a better understanding of carrier transport in heterostructure devices such as resonant tunnelling diodes, high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT).

There has been an exchange of samples between Juelich and Madrid for the study of the pressure dependence of resonant tunnelling diodes. A joint effort has been set up between Rome, Madrid and Padova, focusing on the theoretical and experimental analysis of electronic transport in pseudomorphic gallium arsenide/indium gallium arsenide/aluminium gallium arsenide layers. Joint measurements and simulations are currently being performed on permeable base transistors by Juelich, Padova and Rome. Impact ionisation and light emission from HEMTs and HBTs has been studied in a collaborative work. An international workshop 'GaAs Electronics: Toward Zero Dimensional Structures' has been held in Rome on February 4-6 1993, organized by the working group coordinator and sponsored jointly by the working group, the University of Rome 'Tor Vergata', and the Italian National Research Council.
The activities of the working group include:

- exchange of researchers between the partners laboratories, intended mainly to allow young researchers to spend some time abroad, learn new techniques, strengthen their skills, and interact with a different environment
- participation at international conferences, workshops, schools and symposia, in order to exchange latest results with collegues involved in the field and to present the achievements obtained as a part of the working group activity
- visit to universities and research laboratories involved in other working groups or in european projects, in order to assure the interaction with researchers involved in similar fields
- an annual meeting of the key researchers of the working group, in order to check the progress of the working group, exhange general information, coordinate and plan new activities, prepare research proposals
- an annual workshop where the results achieved by each partner will be presented and discussed. The first workshop has been held in Rome on February 1993.

POTENTIAL

The Group focuses on a subject which is of great importance for the European microelectronics industry. The research activity performed by the partners and the workshops that the working group will organise are intended to provide a reference point for industries involved in the field and for other European projects. The undergoing activity, and the open workshop organised by the working group, is indicating the need of a strong interaction with industrial partners, in order to assure the impact of the results achieved within the working group on the european microelectronic products.

Coordinator

Dipartimento di Elettronica e Informatica
Address
Via Gradenigo 6/A
35131 Padova
Italy

Participants (4)

FORSCHUNGSZENTRUM JUELICH GMBH
Germany
Address
Wilhelm Johnen Strasse
52425 Juelich
UNIVERSITAT POLITECNICA DE MADRID
Spain
Address
Campus De Montegancedo
28660 Madrid
Università degli Studi di Genova
Italy
Address
Via Dodecaneso 35
16146 Genova
Université de Lille I (Université des Sciences et Technologies de Lille Flandres Artois)
France
Address
Domaine Universitaire Scientifique
59655 Villeneuve D'ascq