Ion-gated Interfaces for Quantum Phase Devices

Publicaciones

Extended Polymorphism of Two-Dimensional Material

Autores: Masaro Yoshida, Jianting Ye, Yijin Zhang, Yasuhiko Imai, Shigeru Kimura, Akihiko Fujiwara, Terukazu Nishizaki, Norio Kobayashi, Masaki Nakano, Yoshihiro Iwasa
Publicado en: Nano Letters, Edición 17/9, 2017, Página(s) 5567-5571, ISSN 1530-6984
Editor: American Chemical Society
DOI: 10.1021/acs.nanolett.7b02374

Superconductivity protected by spin–valley locking in ion-gated MoS2

Autores: Yu Saito, Yasuharu Nakamura, Mohammad Saeed Bahramy, Yoshimitsu Kohama, Jianting Ye, Yuichi Kasahara, Yuji Nakagawa, Masaru Onga, Masashi Tokunaga, Tsutomu Nojima, Youichi Yanase, Yoshihiro Iwasa
Publicado en: Nature Physics, Edición 12/2, 2016, Página(s) 144-149, ISSN 1745-2473
Editor: Nature Publishing Group
DOI: 10.1038/nphys3580

High Quality Superconductor-Normal Metal Junction Made on the Surface of MoS 2 Flakes

Autores: Qihong Chen, Lei Liang, Abdurrahman Ali El Yumin, Jianming Lu, Oleksandr Zheliuk, Jianting Ye
Publicado en: physica status solidi (b), Edición 254/11, 2017, Página(s) 1700181, ISSN 0370-1972
Editor: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201700181

Planar p - n Junction Based on a TMDs/Boron Nitride Heterostructure

Autores: Abdurrahman Ali El Yumin, Jie Yang, Qihong Chen, Oleksandr Zheliuk, Jianting Ye
Publicado en: physica status solidi (b), Edición 254/11, 2017, Página(s) 1700180, ISSN 0370-1972
Editor: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201700180

Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

Autores: L. Liang, J. Shan, Q. H. Chen, J. M. Lu, G. R. Blake, T. T. M. Palstra, G. E. W. Bauer, B. J. van Wees, J. T. Ye
Publicado en: Physical Review B, Edición 98/13, 2018, ISSN 2469-9950
Editor: American Physical Society
DOI: 10.1103/physrevb.98.134402

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS 2

Autores: Qihong Chen, Abdurrahman Ali El Yumin, Oleksandr Zheliuk, Puhua Wan, Minpeng Liang, Xiaoli Peng, Jianting Ye
Publicado en: physica status solidi (RRL) – Rapid Research Letters, Edición 13/12, 2019, Página(s) 1900333, ISSN 1862-6254
Editor: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201900333

Josephson coupled Ising pairing induced in suspended MoS2 bilayers by double-side ionic gating

Autores: O. Zheliuk, J. M. Lu, Q. H. Chen, A. A. El Yumin, S. Golightly, J. T. Ye
Publicado en: Nature Nanotechnology, Edición 14/12, 2019, Página(s) 1123-1128, ISSN 1748-3387
Editor: Nature Publishing Group
DOI: 10.1038/s41565-019-0564-1

Strong dopant dependence of electric transport in ion-gated MoS 2

Autores: Erik Piatti, Qihong Chen, Jianting Ye
Publicado en: Applied Physics Letters, Edición 111/1, 2017, Página(s) 013106, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/1.4992477

Inducing and Manipulating Heteroelectronic States in a Single MoS 2 Thin Flake

Autores: Q. H. Chen, J. M. Lu, L. Liang, O. Zheliuk, A. Ali, P. Sheng, J. T. Ye
Publicado en: Physical Review Letters, Edición 119/14, 2017, ISSN 0031-9007
Editor: American Physical Society
DOI: 10.1103/PhysRevLett.119.147002

Monolayer Superconductivity in WS 2

Autores: Oleksandr Zheliuk, Jianming Lu, Jie Yang, Jianting Ye
Publicado en: physica status solidi (RRL) - Rapid Research Letters, Edición 11/9, 2017, Página(s) 1700245, ISSN 1862-6254
Editor: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201700245

Role of Defects in Tuning the Electronic Properties of Monolayer WS 2 Grown by Chemical Vapor Deposition

Autores: Jie Yang, Pavlo Gordiichuk, Oleksandr Zheliuk, Jianming Lu, Andreas Herrmann, Jianting Ye
Publicado en: physica status solidi (RRL) - Rapid Research Letters, Edición 11/10, 2017, Página(s) 1700302, ISSN 1862-6254
Editor: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201700302

Full superconducting dome of strong Ising protection in gated monolayer WS 2

Autores: Jianming Lu, Oleksandr Zheliuk, Qihong Chen, Inge Leermakers, Nigel E. Hussey, Uli Zeitler, Jianting Ye
Publicado en: Proceedings of the National Academy of Sciences, Edición 115/14, 2018, Página(s) 3551-3556, ISSN 0027-8424
Editor: National Academy of Sciences
DOI: 10.1073/pnas.1716781115

Continuous Low-Bias Switching of Superconductivity in a MoS 2 Transistor

Autores: Qihong Chen, Jianming Lu, Lei Liang, Oleksandr Zheliuk, Abdurrahman Ali El Yumin, Jianting Ye
Publicado en: Advanced Materials, 2018, Página(s) 1800399, ISSN 0935-9648
Editor: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201800399

Polarized resonant emission of monolayer WS2 coupled with plasmonic sawtooth nanoslit array

Autores: Chunrui Han, Jianting Ye
Publicado en: Nature Communications, Edición 11/1, 2020, ISSN 2041-1723
Editor: Nature Publishing Group
DOI: 10.1038/s41467-020-14597-2

Inducing lasing in organic materials with low optical gain by three-dimensional plasmonic nanocavity arrays

Autores: Chunrui Han, Yuejing Qi, Yu Wang, Jianting Ye
Publicado en: Optics Express, Edición 27/15, 2019, Página(s) 20597, ISSN 1094-4087
Editor: Optical Society of America
DOI: 10.1364/oe.27.020597

Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating

Autores: Lei Liang, Qihong Chen, Jianming Lu, Wytse Talsma, Juan Shan, Graeme R. Blake, Thomas T. M. Palstra, Jianting Ye
Publicado en: Science Advances, Edición 4/4, 2018, Página(s) eaar2030, ISSN 2375-2548
Editor: Science
DOI: 10.1126/sciadv.aar2030

Metallic ground state in an ion-gated two-dimensional superconductor

Autores: Y. Saito, Y. Kasahara, J. Ye, Y. Iwasa, T. Nojima
Publicado en: Science, Edición 350/6259, 2015, Página(s) 409-413, ISSN 0036-8075
Editor: American Association for the Advancement of Science
DOI: 10.1126/science.1259440

Evidence for two-dimensional Ising superconductivity in gated MoS2

Autores: J. M. Lu, O. Zheliuk, I. Leermakers, N. F. Q. Yuan, U. Zeitler, K. T. Law, J. T. Ye
Publicado en: Science, Edición 350/6266, 2015, Página(s) 1353-1357, ISSN 0036-8075
Editor: American Association for the Advancement of Science
DOI: 10.1126/science.aab2277

Highly Conductive Metallic State and Strong Spin–Orbit Interaction in Annealed Germanane

Autores: Qihong Chen, Lei Liang, Georgia Potsi, Puhua Wan, Jianming Lu, Theodosis Giousis, Eleni Thomou, Dimitrios Gournis, Petra Rudolf, Jianting Ye
Publicado en: Nano Letters, Edición 19/3, 2019, Página(s) 1520-1526, ISSN 1530-6984
Editor: American Chemical Society
DOI: 10.1021/acs.nanolett.8b04207

Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides

Autores: Y. J. Zhang, W. Shi, J. T. Ye, R. Suzuki, Y. Iwasa
Publicado en: Physical Review B, Edición 95/20, 2017, ISSN 2469-9950
Editor: American Physical Society
DOI: 10.1103/physrevb.95.205302

Strong anisotropic enhancement of photoluminescence in WS2 integrated with plasmonic nanowire array

Autores: Chunrui Han, Yu Wang, Weihu Zhou, Minpeng Liang, Jianting Ye
Publicado en: Scientific Reports, Edición 11/1, 2021, ISSN 2045-2322
Editor: Nature Publishing Group
DOI: 10.1038/s41598-021-89136-0

Quantum transport in molybdenum disulfide and germanane transistors

Autores: Chen, Qihong
Publicado en: Edición 4, 2017
Editor: Rijksuniversiteit Groningen

2D materials and interfaces in high-carrier density regime: a study on optoelectronics and superconductivity

Autores: Abdurrahman Ali El Yumin
Publicado en: 2019
Editor: University of Groningen

Field effect controlled magnetism and magnetotransport in low dimensions

Autores: Liang, Lei
Publicado en: Edición 2, 2017
Editor: Rijksuniversiteit Groningen

Magnetotransport of Ising superconductors

Autores: Oleksandr Zheliuk
Publicado en: 2020
Editor: University of Groningen

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