Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers

Informations projet

PINC

N° de convention de subvention: 658349

DOI

10.3030/658349

Projet clôturé

Date de signature de la CE 23 Mars 2015

Date de début 15 Juin 2015

Date de fin 14 Juin 2017

Financé au titre de

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Coût total

€ 170 121,60

Contribution de l’UE

€ 170 121,60

Coordonné par

UNIVERSIDAD POLITECNICA DE MADRID
Spain

Periodic Reporting for period 1 - PINC (Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers)

Période du rapport: 2015-06-15 au 2017-06-14

Résumé du contexte et des objectifs généraux du projet

We carried out a 24-months-project, working on the growth and characterization of Mg doped InxGa1-xN Nanocolumns (NCs) on a Si (100) substrate with a GaN buffer layer, aiming to achieve the p-type conductivity in In0.5Ga0.5N NCs. Under the program, we achieved one computer program, three manuscripts, one published paper, data for three future papers and experimental data for another possible computer program. In the previous study, selective area growth (SAG) of In(Ga)N NCs on top of a GaN buffered Si substrate by using plasma-assisted molecular beam epitaxy (PAMBE) has been achieved. Subsequently, the major challenges for fabricating p-In0.5Ga0.5N/n-In0.5Ga0.5N/p-Si/n-Si stacking solar cells deal with the achievement of controllable p-type conductivity in In0.5Ga0.5N NCs and its reliable assessment. Ordered Mg-doped InxGa1-xN NCs will be grown on a Si (100) substrate with a GaN buffer layer by using PAMBE. The growth will start with Mg-doped In0.3Ga0.7N/GaN NCs. Then Indium mole fraction in subsequent samples will be increased gradually, approaching 0.5. During the process, different characterization measurements will be performed in order to optimize the growth conditions. The proposed project will provide high-quality p-type InxGa1-xN, 0.3≤x≤0.5 NCs on a Si (100) substrate with a GaN buffer layer for further processing. The electronic and structural properties of Mg-doped InxGa1-xN, 0.3≤x≤0.5 can be abstracted from the characterization results in the project. The information will fill the research gap in the Mg-doped InxGa1-xN, 0.3≤x≤0.5.

Travail effectué depuis le début du projet jusqu’à la fin de la période considérée dans le rapport et principaux résultats atteints jusqu’à présent

Under the program, we achieved one computer program, three manuscripts, one published paper, data for three future papers and experimental data for another possible computer program:
1) A submitted copy right of a computer program. It is the first computer program to fit the X-ray diffraction (XRD) maps which is a powerful tool for analyzing the structural properties of any epitaxy and accessing the quality of NCs or thin films.
2) A submitted paper present firstly how to estimate the density of threading dislocation in NCs.
3) Basing on the achieve 1, the computer program, a manuscript about how to study the quality of NCs and thin films via fitting reciprocal space maps (RSMs) is in progress.
4) A manuscript will report firstly the effective mass of electron in InGaN over the all In concentration.
5) By using the method developed in achieve 2, a paper about dislocation free AlN NCs is published on Nanotechnology.
6) A group of XRD data of nonpolar and semipolar AlN NCs has been collected and analyzed, which will be published in a journal paper.
7) The structural properties of Mg doped InGaN thin films have been studied. The electronic properties will be studied in September. All the data will be published in a journal paper.
8) We studied the effect of Mg on the lattice of GaN body via ab-initio calculation, the corresponding effect on the surface will be done soon. The experimental study of the effect of Mg on the lattice of GaN with NC structure needs further analysis. All the data will be published in a journal paper.
9) I collected data for the simulation of the homo-epitaxial NCs, more data will be collected and a calculation of the simulation will be performed later. I want to find an easy way to characterize GaN NCs grown on the top of GaN thin film template.
Besides, during the project, our group has built a new close collaborative relationship with two research groups in Université de Genève and University of Leuven, respectively.

Progrès au-delà de l’état des connaissances et impact potentiel prévu (y compris l’impact socio-économique et les conséquences sociétales plus larges du projet jusqu’à présent)

1) A submitted copy right of a computer program. It is the first computer program to fit the X-ray diffraction (XRD) maps which is a powerful tool for analyzing the structural properties of any epitaxy and accessing the quality of NCs or thin films.
2) A submitted paper present firstly how to estimate the density of threading dislocation in NCs.
3) Basing on the achieve 1, the computer program, a manuscript about how to study the quality of NCs and thin films via fitting reciprocal space maps (RSMs) is in progress.
4) A manuscript will report firstly the effective mass of electron in InGaN over the all In concentration.
5) By using the method developed in achieve 2, a paper about dislocation free AlN NCs is published on Nanotechnology.

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