Enhanced substrates and GaN pilot lines enabling compact power applications

Resultado final

8.2.1.2 Final Report on Dissemination Activities

Final Report on Dissemination Activities

D8.2.1.2 First Report on Dissemination Activities

First Report on Dissemination Activities

D8.1.3.1 Press Release: Launching the PowerBase Project

Press Release: Launching the PowerBase Project

D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site

Initial Dissemination Plan and Set-up PowerBase Web-Site

8.2.5.2 Organization of a workshop/training event

Organization of a workshop/training event

D8.2.5.1 Preparation of e-learning “Power electronics” module;

Preparation of e-learning “Power electronics” module;

Publicaciones

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Autores: Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Publicado en: IEEE Transactions on Electron Devices, Edición 64/9, 2017, Página(s) 3616-3621, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2726440

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Autores: I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
Publicado en: Microelectronics Reliability, Edición 76-77, 2017, Página(s) 298-303, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/j.microrel.2017.06.061

Dislocation formation in heavily As-doped Czochralski grown silicon

Autores: L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich
Publicado en: Crystal Research and Technology, Edición 52/8, 2017, Página(s) 1600373, ISSN 0232-1300
Editor: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/crat.201600373

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Autores: L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich
Publicado en: Journal of Crystal Growth, Edición 491, 2018, Página(s) 57-65, ISSN 0022-0248
Editor: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.03.028

Exploring the thermal limit of GaN power devices under extreme overload conditions

Autores: F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Publicado en: Microelectronics Reliability, Edición 76-77, 2017, Página(s) 304-308, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/j.microrel.2017.07.046

Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties

Autores: L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov
Publicado en: Physical Review B, Edición 95/19, 2017, Página(s) 1-11, ISSN 2469-9950
Editor: American Physical Society
DOI: 10.1103/PhysRevB.95.195314

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Autores: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Publicado en: Microelectronics Reliability, Edición 78, 2017, Página(s) 148-155, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/j.microrel.2017.08.012

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Autores: Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball
Publicado en: IEEE Transactions on Electron Devices, Edición 65/5, 2018, Página(s) 1838-1842, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2813542

The 2018 GaN power electronics roadmap

Autores: H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng J
Publicado en: Journal of Physics D: Applied Physics, Edición 51/16, 2018, Página(s) 163001, ISSN 0022-3727
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aaaf9d

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autores: Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere
Publicado en: IEEE Electron Device Letters, 2017, Página(s) 1-1, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2703304

QDB: a new database of plasma chemistries and reactions

Autores: Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nig
Publicado en: Plasma Sources Science and Technology, Edición 26/5, 2017, Página(s) 055014, ISSN 1361-6595
Editor: IOP Publishing Ltd
DOI: 10.1088/1361-6595/aa6669

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

Autores: Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval
Publicado en: IEEE Transactions on Electron Devices, Edición 64/1, 2017, Página(s) 333-336, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2629024

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Autores: Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Publicado en: IEEE Transactions on Electron Devices, Edición 63/9, 2016, Página(s) 3451-3458, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2587103

Gate Stability of GaN-Based HEMTs with P-Type Gate

Autores: Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Publicado en: Electronics, Edición 5/2, 2016, Página(s) 14, ISSN 2079-9292
Editor: MDPI
DOI: 10.3390/electronics5020014

Combined experi-mental and numerical approach to study electromechanical resonant phenomena in GaN-on-Si heterostructures

Autores: F.P. Pribahsnik, M. Bernardoni, M. Nelhiebel, M. Mataln, A. Lindemann
Publicado en: Proceedings ESREF 2018, 2018, ISSN 0026-2714
Editor: Elsevier Ltd.

Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology

Autores: M.Lenzhofer, A. Frank
Publicado en: IEEE- PEMC 2018, 2018
Editor: IEEE

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Autores: S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere
Publicado en: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018, 2018
Editor: IMT Bucharest

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Autores: N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere
Publicado en: The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD), 2018
Editor: IEEE

MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Autores: Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere
Publicado en: ICNS-12, 2017
Editor: ICNS-12

GaN Device architectures enabled by next generation substrates

Autores: S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere
Publicado en: GaN Marathon 2.0, 2018
Editor: University of Padova

Substrate optimization for high reliability GaN devices

Autores: S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere
Publicado en: MRS2018 Symposium, 2018
Editor: Cambridge University Press

Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

Autores: Ander Avila, Asier Garcia-Bediaga, Oier Onederra, Alejandro Ruias, Alberto Rodriguez
Publicado en: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, Página(s) P.1-P.9, ISBN 978-90-75815-27-6
Editor: IEEE
DOI: 10.23919/EPE17ECCEEurope.2017.8099334

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Autores: Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni
Publicado en: 2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, Página(s) 35-40, ISBN 978-1-5090-4193-0
Editor: IEEE
DOI: 10.1109/IIRW.2016.7904896

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Autores: Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas
Publicado en: Energy Conversion Congress and Exposition, 2018
Editor: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autores: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Publicado en: 20th European Conference on Power Electronics and Applications, 2018
Editor: European Power Electronics Association

Thermal performance analysis of GaN-based high-power converters

Autores: Ander Avila, Xavier Perpiña, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas
Publicado en: European Conference on Power Electronics and Applications, 2018
Editor: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autores: Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier Perpiña, Miquel Vellvehi
Publicado en: European Conference on Power Electronics and Applications, 2018
Editor: IEEE

Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

Autores: PRIESOL, Juraj - ŠATKA, Alexander - VISALLI, D. - DERLUYN, J. - ZHAO, M. - STOFFELS, Steve
Publicado en: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Editor: University of Žilina

Advanced power electronics in e-learning

Autores: MAREK, Juraj - CHVÁLA, Aleš - BENKO, Peter - SZOBOLOVSZKÝ, Robert - KOVÁČ, Jaroslav jr. - STUCHLÍKOVÁ, Ľubica
Publicado en: Distance learning, simulation and communication 2017, 2017, ISBN 978-80-7231-415-7
Editor: University of Defence, Brno

Modern P-Gan Power HEMT Devices Under UIS Conditions

Autores: Juraj Marek, Alexander Šatka, Martin Jagelka, Aleš Chvála, Patrik Príbytný, Martin Donoval and Daniel Donoval
Publicado en: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Editor: University of Žilina

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Autores: CHVÁLA, Aleš - MAREK, Juraj - PRÍBYTNÝ, Patrik - ŠATKA, Alexander - DONOVAL, Daniel - STOFFELS, Steve - POSTHUMA, Niels - DECOUTERE, Stefaan
Publicado en: SISPAD 2017 - International conference on simulation of semiconductor processes and devices., 2017, ISBN 978-4-86348-612-6
Editor: IEEE

Point defects and impurities in mon-crystalline silicon - some recent advances

Autores: N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson
Publicado en: The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016), 2016
Editor: The Japan Society for the Promotion of Science

Study of the stability of GaN-HEMTs with p-type Gate under Forward Gate Bias

Autores: Ruzzarin M. et al.
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

On Wafer Application Testing for 600 V E mode GaN HEMTs in Boost Regime

Autores: Barbato A. et al.
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

Challenges towards highly reliabile GaN power transistors

Autores: Meneghini M. et al.
Publicado en: GaN Marathon 2018, 2018
Editor: Cleup sc

Analysis of the Drain-to-Substrate Leakage of Power HEMTs Grown on Highly Resistive Silicon Substrate

Autores: Borga M. et al.
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

Effect of surface reconstruction and rehybridization on the compositional limits of III-Nitride ternary alloys

Autores: L. Lymperakis and J. Neugebauer
Publicado en: GaN Marathon 2.0, April 18-19, 2018, Padova (Italy) –, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards

Autores: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Publicado en: GaN Marathon 2.0, 2018
Editor: Cleup sc

Performance Analysis of GaN Devices in Compact Power Applications

Autores: A. Garcia-Bediaga, O.R. Schmidt, J. Herrero, J. Danzberger, and H. Pairitsch
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

GaN Devices and Transformer Design in High Frequency Power Applications

Autores: J. Herrero, J. Milla, D. Antolín.
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

3-D Device Electrothermal Simulation for Analysis of Multifinger Power HEMTs

Autores: Aleš Chvála, Juraj Marek, Alexander Šatka, Juraj Priesol, Patrik Príbytný, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval,
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

Degradation of p-GaN HEMTs exposed to clamped inductive switching

Autores: Juraj Marek, Martin Jagelka, Jozef Kozárik, Aleš Chvála, Patrik Príbytný, Alexander Šatka, Martin Donoval, Daniel Donoval and Ľubica Stuchlíková
Publicado en: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editor: Cleup sc

Modern p-GaN power devices under UIS conditions

Autores: J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics

Autores: S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Strain analysis and dicing defects of GaN on Si substrates

Autores: D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study

Autores: L. Lymperakis and J. Neugebauer
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Next generation 200mm substrates for GaN power devices

Autores: S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

QDB: Validated Plasma Chemistries Database

Autores: Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
Publicado en: 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, 2016
Editor: na

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autores: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Publicado en: The International Conference on Crystal Growth and Epitaxy -ICCGE-18, 2016
Editor: na

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autores: X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA, Spain

High temperature failure mode in power GaN devices

Autores: F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors

Autores: K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Autores: S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna
Publicado en: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Página(s) 4B-4.1-4B-4.9, ISBN 978-1-5090-6641-4
Editor: IEEE
DOI: 10.1109/IRPS.2017.7936310

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autores: J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
Publicado en: 10th International Conference of Polish Society for Crystal Growth - ICPSCG10, 2016
Editor: na

Processes behind Suppressed Current Collapse Buffer Architectures

Autores: Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
Publicado en: The International Workshop on Nitride Semiconductors 2016, 2016
Editor: na

Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

Autores: J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
Publicado en: Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method, 2017
Editor: IUMA

QDB: A new database of plasma chemistries and reactions – concept and exemplar verification

Autores: A. Dzarasova
Publicado en: IOP Plasma physics conference, 2016
Editor: IOP publishing

UIS Capability of Modern GaN Power Devices

Autores: J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
Publicado en: 3rd international conference on advances in electronic and photonic technologies, 2016
Editor: na

Application Related Reliability Test Concept for GaN HEMT Power Devices

Autores: M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications

Autores: Jonathan Tennyson, Christian Hill, Sara Rahimi
Publicado en: International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, 2016
Editor: na

Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System

Autores: M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs

Autores: M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Impact of repetitive UIS on modern GaN power devices

Autores: Juraj Marek, Lubica Stuchlikova, Martin Jagelka, Ales Chvala, Patrik Pribytny, Martin Donoval, Daniel Donoval
Publicado en: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, Página(s) 173-176, ISBN 978-1-5090-3083-5
Editor: IEEE
DOI: 10.1109/ASDAM.2016.7805923

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Autores: Matteo Meneghini, Isabella Rossetto, Matteo Borga, Eleonora Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Stefaan Decoutere
Publicado en: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Página(s) 4B-5.1-4B-5.5, ISBN 978-1-5090-6641-4
Editor: IEEE
DOI: 10.1109/IRPS.2017.7936311

Guardbanding Techniques for the Semiconductor Industry: A Comparative Study

Autores: Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
Publicado en: The Joint Statistical Meeting – JSM2016, 2016
Editor: American Statistical Association

Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)

Autores: Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
Publicado en: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Editor: na

Constructing self-consistent validated plasma chemistry

Autores: S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
Publicado en: The 38th International Symposium on Dry Process (DPS2016), 2016
Editor: na

Guardbanding based on Device Drift Behavior

Autores: Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
Publicado en: Nineteenth Annual Automotive Electronics Reliability Workshop, 2017
Editor: na

Exposed die wafer level encapsulation by transfer molding

Autores: S.H.M. Kersjes, J.L.J. Zijl, W.G.J. Gal, H.A.M. Fierkens, H. Wensink
Publicado en: 2016 6th Electronic System-Integration Technology Conference (ESTC), 2016, Página(s) 1-4, ISBN 978-1-5090-1402-6
Editor: IEEE
DOI: 10.1109/ESTC.2016.7764480

Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations

Autores: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
Publicado en: International MOS-AK Workshop, 2016
Editor: International MOS-AK Workshop

MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)

Autores: Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
Publicado en: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Editor: na

A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions

Autores: A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
Publicado en: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editor: IUMA

Linking reactor-scale plasma modelling with feature-scale profile

Autores: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Publicado en: Dry Process Symposium, 2015
Editor: Dry Process Symposium

From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations

Autores: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Publicado en: American Vacuum Society Symopsium, 2015
Editor: American Vacuum Society

Determination of guard bands for quality characteristics using copula-based models for longitudinal data

Autores: Hofer V., Leitner J., Nowak T
Publicado en: The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016, 2016
Editor: The German Consortium in Statistics

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autores: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Publicado en: 1st German Czechoslovak Conference on Crystal Growth, 2016
Editor: Fraunhofer Institute of Integrated Systems and Device Technology IISB

GaN specific mechanical phenomena and their influence on reliability in power HEMT operation

Autores: F.P. Pribahsnik
Publicado en: PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke Universität Magdeburg, 2018
Editor: Otto v Guericke Universität Magdeburg

First time demonstration of fully isolated GaN power devices using SOI technology

Autores: Karen Geens
Publicado en: imec magazine, 2017
Editor: imec

Derechos de propiedad intelectual

Schaltkreis, Halbleiterbauelement und Verfahren

Número de solicitud/publicación: US 7868353
Fecha: 2015-10-13
Solicitante(s): INFINEON TECHNOLOGIES AUSTRIA AG

Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zurHerstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinemSilizium

Número de solicitud/publicación: DE 102016209008
Fecha: 2016-05-24
Solicitante(s): SILTRONIC AG

SEMICONDUCTOR WAFER AND METHOD

Número de solicitud/publicación: US 20170186600A1
Fecha: 2015-12-24
Solicitante(s): INFINEON TECHNOLOGIES AUSTRIA AG

GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE

Número de solicitud/publicación: EP 17159548
Fecha: 2017-03-07
Solicitante(s): INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM

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