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Zinc Oxide For TeraHertz Cascade Devices

Objective

The terahertz (THz) spectral region, located between the infrared and the microwave regions, is known as “the THz gap” because of the lack of compact semiconductor devices. This spectral domain is currently intensively explored in view of its potential for medical diagnostics, security screening, trace molecule sensing, astronomical detection, space-borne imaging, non-invasive quality control or wireless communications. A prerequisite for public-domain applications to emerge in the strategic THz frequency range is the availability of compact size semiconductor sources operating at room temperature, which is out of range of the current technology based on GaAs quantum cascade lasers.
ZOTERAC proposes a disruptive approach based on ZnO-based nano-engineered semiconductors in order to realize THz emitters operating at room-temperature with milliWatt output power capability as well as THz quantum detectors with unprecedented large operating temperatures. These devices are based on the quantum cascade concept and take benefit of the large optical phonon energy of ZnO (twice that of GaAs) for achieving high temperature operation.
Establishing a new state-of-the-art for the design, growth and processing of ZnO/ZnMgO heterostructures, and developing an advanced know-how on oxide-based devices are major challenges of the project. The consortium regroups world–class academic experts on ZnO technologies, quantum cascade lasers and detectors as well as THz optoelectronics. The strategies have been chosen based on a careful assessment of the risk attached to all tasks and achievement of targeted objectives at each stage of the project. This project which implies a strong expertize in basic physics, chemistry and engineering, is expected to generate high impacts in terms of scientific and technological achievements.

Field of science

  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds
  • /natural sciences/physical sciences/electromagnetism and electronics/semiconductor device
  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /natural sciences/physical sciences/electromagnetism and electronics/optoelectronics
  • /natural sciences/physical sciences/optics/laser physics

Call for proposal

H2020-FETOPEN-2014-2015-RIA
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
Address
Rue Michel Ange 3
75794 Paris
France
Activity type
Research Organisations
EU contribution
€ 1 532 742,44

Participants (4)

UNIVERSITE PARIS-SACLAY
France
EU contribution
€ 306 251
Address
Immeuble Technologique Entree B Rte De L Orme Aux Merisiers
91190 Saint Aubin
Activity type
Higher or Secondary Education Establishments
UNIVERSIDAD POLITECNICA DE MADRID
Spain
EU contribution
€ 698 871
Address
Calle Ramiro De Maeztu 7 Edificio Rectorado
28040 Madrid
Activity type
Higher or Secondary Education Establishments
TECHNISCHE UNIVERSITAET WIEN
Austria
EU contribution
€ 631 937,50
Address
Karlsplatz 13
1040 Wien
Activity type
Higher or Secondary Education Establishments
EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH
Switzerland
EU contribution
€ 626 075
Address
Raemistrasse 101
8092 Zuerich
Activity type
Higher or Secondary Education Establishments