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CMOS/magnetoelectronic Integrated Circuits wil Multifunctional Capabilities

Publications

Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

Author(s): Jyotirmoy Chatterjee, Ricardo C. Sousa, Nicolas Perrissin, Stéphane Auffret, Clarisse Ducruet, and Bernard Dieny
Published in: Applied Physics Letters, Issue 110/20, 2017, Page(s) 202401, ISSN 0003-6951
DOI: 10.1063/1.4983159

Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions

Author(s): B. M. S. Teixeira, A. A. Timopheev, N. F. F. Caçoilo, S. Auffret, R. C. Sousa, B. Dieny, E. Alves, N. A. Sobolev
Published in: Applied Physics Letters, Issue 112/20, 2018, Page(s) 202403, ISSN 0003-6951
DOI: 10.1063/1.5026854

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Author(s): Nicolas Perrissin, Steven Lequeux, Strelkov Nikita, Laurent Vila, Liliana Buda-Prejbeanu, Stephane Auffret, Ricardo Sousa, Ioan Lucian Prejbeanu, Bernard Dieny
Published in: Nanoscale, 2018, ISSN 2040-3364
DOI: 10.1039/C8NR01365A

Magnetic modulation of inverse spin Hall effect in lateral spin-valves

Author(s): T Andrianov, A Vedyaev, B.Dieny
Published in: Journal of Physics D: Applied Physics, Issue 51/20, 2018, Page(s) 205003, ISSN 0022-3727

Advanced memory—Materials for a new era of information technology

Author(s): Cheol Seong Hwang, Bernard Dieny
Published in: MRS Bulletin, Issue 43/05, 2018, Page(s) 330-333, ISSN 0883-7694
DOI: 10.1557/mrs.2018.96

Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Author(s): A. Ruiz-Calaforra, A. Purbawati, T. Brächer, J. Hem, C. Murapaka, E. Jiménez, D. Mauri, A. Zeltser, J. A. Katine, M.-C. Cyrille, L. D. Buda-Prejbeanu, U. Ebels
Published in: Applied Physics Letters, Issue 111/8, 2017, Page(s) 082401, ISSN 0003-6951
DOI: 10.1063/1.4994892

Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency

Author(s): A. A. Timopheev, B. M. S. Teixeira, R. C. Sousa, S. Aufret, T. N. Nguyen, L. D. Buda-Prejbeanu, M. Chshiev, N. A. Sobolev, B. Dieny
Published in: Physical Review B, Issue 96/1, 2017, ISSN 2469-9950
DOI: 10.1103/physrevb.96.014412

Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet

Author(s): Jyotirmoy Chatterjee, Stephane Auffret, Ricardo Sousa, Paulo Coelho, Ioan-Lucian Prejbeanu, Bernard Dieny
Published in: Scientific Reports, Issue 8/1, 2018, ISSN 2045-2322
DOI: 10.1038/s41598-018-29913-6

Impact of Intergrain Spin-Transfer Torques Due to Huge Thermal Gradients in Heat-Assisted Magnetic Recording

Author(s): Bernard Dieny, Mair Chshiev, Brian Charles, Nikita Strelkov, Alain Truong, Olivier Fruchart, Ali Hallal, Jian Wang, Yukiko K. Takahashi, Tomohito Mizuno, Kazuhiro Hono
Published in: IEEE Transactions on Magnetics, Issue 54/12, 2018, Page(s) 1-11, ISSN 0018-9464
DOI: 10.1109/tmag.2018.2863225

Nonlocal Signal and Noise in T -Shaped Lateral Spin-Valve Structures

Author(s): A. Vedyayev, N. Ryzhanova, N. Strelkov, T. Andrianov, A. Lobachev, B. Dieny
Published in: Physical Review Applied, Issue 10/6, 2018, ISSN 2331-7019
DOI: 10.1103/physrevapplied.10.064047

Impact of Joule heating on the stability phase diagrams of perpendicular magnetic tunnel junctions

Author(s): N. Strelkov, A. Chavent, A. Timopheev, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, B. Dieny
Published in: Physical Review B, Issue 98/21, 2018, ISSN 2469-9950
DOI: 10.1103/physrevb.98.214410

Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer

Author(s): Jyotirmoy Chatterjee, Eric Gautier, Marc Veillerot, Ricardo C. Sousa, Stéphane Auffret, Bernard Dieny
Published in: Applied Physics Letters, Issue 114/9, 2019, Page(s) 092407, ISSN 0003-6951
DOI: 10.1063/1.5081912

Impact of Dzyaloshinskii-Moriya interactions on the thermal stability factor of heavy metal/magnetic metal/oxide based nano-pillars

Author(s): Daniele Gastaldo, Nikita Strelkov, Liliana D. Buda-Prejbeanu, Bernard Dieny, Olivier Boulle, Paolo Allia, Paola Tiberto
Published in: Journal of Applied Physics, Issue 126/10, 2019, Page(s) 103905, ISSN 0021-8979
DOI: 10.1063/1.5109484

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

Author(s): B. Dieny, M. Chshiev
Published in: Reviews of Modern Physics, Issue 89/2, 2017, ISSN 0034-6861
DOI: 10.1103/RevModPhys.89.025008

Establishing characteristic behavior of voltage control of magnetic anisotropy by ionic migration

Author(s): F. Ibrahim, A. Hallal, B. Dieny, M. Chshiev
Published in: Physical Review B, Issue 98/21, 2018, ISSN 2469-9950
DOI: 10.1103/PhysRevB.98.214441

Stability phase diagram of a perpendicular magnetic tunnel junction in noncollinear geometry

Author(s): N. Strelkov, A. Timopheev, R. C. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny
Published in: Physical Review B, Issue 95/18, 2017, Page(s) 184409, ISSN 2469-9950
DOI: 10.1103/PhysRevB.95.184409

Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

Author(s): A. Vedyayev, N. Ryzhanova, N. Strelkov, M. Titova, M. Chshiev, B. Rodmacq, S. Auffret, L. Cuchet, L. Nistor, B. Dieny
Published in: Physical Review B, Issue 95/6, 2017, ISSN 2469-9950
DOI: 10.1103/PhysRevB.95.064420

Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

Author(s): Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Ioan L. Prejbeanu, Bernard Dieny
Published in: Scientific Reports, Issue 6/1, 2016, ISSN 2045-2322
DOI: 10.1038/srep21246

Magnetoresistive Random Access Memory

Author(s): Dmytro Apalkov, Bernard Dieny, J. M. Slaughter
Published in: Proceedings of the IEEE, Issue 104/10, 2016, Page(s) 1796-1830, ISSN 0018-9219
DOI: 10.1109/JPROC.2016.2590142

Reducing System Power Consumption Using Check-Pointing on Nonvolatile Embedded Magnetic Random Access Memories

Author(s): Christophe Layer, Virgile Javerliac, Fabrice Bernard-Granger, Loic Decloedt, Laurent Becker, Kotb Jabeur, Sylvain Claireux, Bernard Dieny, Guillaume Prenat, Gregory Di Pendina, Stephane Gros, Pierre Paoli
Published in: ACM Journal on Emerging Technologies in Computing Systems, Issue 12/4, 2016, Page(s) 1-24, ISSN 1550-4832
DOI: 10.1145/2876507

Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations

Author(s): C.?I.?L. de Araujo, S.?G. Alves, L.?D. Buda-Prejbeanu, B. Dieny
Published in: Physical Review Applied, Issue 6/2, 2016, Page(s) 024015, ISSN 2331-7019
DOI: 10.1103/PhysRevApplied.6.024015

Spintronics [Scanning the Issue]

Author(s): Hideo Ohno, Mark D. Stiles, Bernard Dieny
Published in: Proceedings of the IEEE, Issue 104/10, 2016, Page(s) 1782-1786, ISSN 0018-9219
DOI: 10.1109/JPROC.2016.2601163

Anatomy of electric field control of perpendicular magnetic anisotropy at Fe/MgO interfaces

Author(s): F. Ibrahim, H. X. Yang, A. Hallal, B. Dieny, M. Chshiev
Published in: Physical Review B, Issue 93/1, 2016, Page(s) 014429, ISSN 2469-9950
DOI: 10.1103/PhysRevB.93.014429

Temperature Variation of Magnetic Anisotropy in Pt / Co / AlO x Trilayers

Author(s): H. Garad, F. Fettar, F. Gay, Y. Joly, S. Auffret, B. Rodmacq, B. Dieny, L. Ortega
Published in: Physical Review Applied, Issue 7/3, 2017, Page(s) 034023, ISSN 2331-7019
DOI: 10.1103/PhysRevApplied.7.034023

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Author(s): A. A. Timopheev, R. Sousa, M. Chshiev, H. T. Nguyen, B. Dieny
Published in: Scientific Reports, Issue 6/1, 2016, ISSN 2045-2322
DOI: 10.1038/srep26877

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

Author(s): M. Chshiev, A. Manchon, A. Kalitsov, N. Ryzhanova, A. Vedyayev, N. Strelkov, W. H. Butler, B. Dieny
Published in: Physical Review B, Issue 92/10, 2015, ISSN 1098-0121
DOI: 10.1103/PhysRevB.92.104422

Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications

Author(s): V. D. Nguyen, P. Sabon, J. Chatterjee, L. Tille, P. Veloso Coelho, S. Auffret, R. Sousa, L. Prejbeanu, E. Gautier, L. Vila, B. Dieny
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 38.5.1-38.5.4
DOI: 10.1109/IEDM.2017.8268517

Spintronic based RF components

Author(s): U. Ebels, J. Hem, A. Purbawati, A. Ruiz Calafora, C. Murapaka, L. Vila, K. Jaimes Merazzo, E. Jimenez, M.-C. Cyrille, R. Ferreira, M. Kreissig, R. Ma, F. Ellinger, R. Lebrun, S. Wittrock, V. Cros, P. Bortolotti
Published in: 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFC), 2017, Page(s) 66-67
DOI: 10.1109/FCS.2017.8088802

Towards high density STT-MRAM at sub-20nm nodes

Author(s): V. D. Nguyen, N. Perrissin, S. Lequeux, J. Chatterjee, L. Tille, S. Auffret, R. Sousa, E. Gautier, L. Vila, L. Prejbeanu, B. Dieny
Published in: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018, Page(s) 1-2
DOI: 10.1109/VLSI-TSA.2018.8403867

Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices

Author(s): N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L. Buda-Prejbeanu, S. Auffret, R.C. Sousa, I.L. Prejbeanu, B. Dieny
Published in: 2018 International Conference on IC Design & Technology (ICICDT), 2018, Page(s) 125-128
DOI: 10.1109/icicdt.2018.8399772

Low-power hybrid STT/CMOS system-on-chip embedding non-volatile magnetic memory blocks

Author(s): Christophe Layer, Kotb Jabeur, Stephane Gros, Laurent Becker, Pierre Paoli, Fabrice Bernard-Granger, Virgile Javerliac, Bernard Dieny
Published in: 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 2015, Page(s) 1-4
DOI: 10.1109/NEWCAS.2015.7181999

Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications

Author(s): B. Lacoste, M. Marins de Castro, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, B. Rodmacq, B. Dieny
Published in: 2016 IEEE 8th International Memory Workshop (IMW), 2016, Page(s) 1-4
DOI: 10.1109/IMW.2016.7495262

Hybrid STT/CMOS Design of an Interrupt Based Instant On/Off Mechanism for Low-Power SoC

Author(s): Christophe Layer, Kotb Jabeur, Laurent Becker, Bernard Dieny, Stephane Gros, Virgile Javerliac, Pierre Paoli, Fabrice Bernard-Granger
Published in: 2015 IEEE Computer Society Annual Symposium on VLSI, 2015, Page(s) 315-320
DOI: 10.1109/ISVLSI.2015.7

Magnetic Random Access Memory

Author(s): S.Bandiera and B.Dieny
Published in: 2017

Miniaturisation extrême de mémoires STT-MRAM: couche de stockage à anisotropie de forme perpendiculaire

Author(s): Nicolas Perrissin Fabert
Published in: 2018

Introduction to Magnetic Random Access Memories

Author(s): B.Dieny, R.Goldfarb, K.J.Lee
Published in: 2017