Descripción del proyecto
Los innovadores dispositivos magnéticos tridimensionales podrían transformar la electrónica
La orbitrónica de espín es un subcampo emergente dentro de la espintrónica que explota los efectos de acoplamiento espín-órbita en los materiales para controlar el flujo de espín electrónico. Estudios recientes han demostrado que la interacción de distintos efectos de acoplamiento espín-órbita permite un movimiento muy eficaz de las paredes de dominio (DW, en inglés) en nanoestructuras magnéticas impulsado por la corriente. El proyecto SORBET, financiado por el Consejo Europeo de Investigación, se centra en la orbitrónica de espín e investigará dos innovadores conceptos de dispositivos DW: un dispositivo de pared de dominio único de dos terminales y una memoria tridimensional de pista de carreras. Los dispositivos tridimensionales propuestos pueden ayudar a superar las limitaciones de escala de la electrónica en dos dimensiones existente. Un objetivo clave es comprender el par espín-órbita que impulsa el movimiento de los DW en los nanocables, lo que podría permitir texturas de espín tridimensionales más complejas que tengan corrientes umbral más bajas para el movimiento y presenten fenómenos de transporte topológico.
Objetivo
Spintronics is a vibrant field of research that involves the intimate interaction of magnetic structure on the atomic scale with spin currents and spin-polarized charge currents. SORBET is focussed on an emerging sub-field of spintronics, namely that of spin orbitronics. Recent discoveries in this field concern the interplay of several distinct spin orbit coupling derived phenomena that, together, allow for the highly efficient current
induced motion of domain walls (DWs) in magnetic nanowires. It is proposed to explore two classes of domain-wall device concepts: a novel two terminal single-domain wall device composed of a spin-valve based structure that is deposited on a vertical wall or other 3D structure; and a 3D racetrack memory that involves multiple domain walls. The main objectives of the project involve the exploration of atomically engineered thin film magnetic nano-structures that could enable these revolutionary devices, and to unravel and exploit the new physics of this emerging field of research. To achieve these objectives fundamental breakthroughs are needed both in the thin film materials themselves and in the physics that determines the material properties and controls the motion of the DWs. These devices are innately three-dimensional and thus can overcome challenges that limit the scaling of existing two-dimensional electronic technologies.
Novel methods to fabricate these devices will be explored, especially, the use of atomic layer deposition and 3D printing techniques. An important objective will be to understand the origin of the spin orbit torques that
drive domain walls in nanowires and the detailed relationship of these torques to the DW structure; it is anticipated that this will enable even more complex 3D spin textures to be realized that have, for example, much lower threshold currents for motion than is currently possible, and that exhibit topological transport phenomena that could even be used to generate or detect domain walls.
Ámbito científico
Programa(s)
Régimen de financiación
ERC-ADG - Advanced GrantInstitución de acogida
80539 Munchen
Alemania