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III-Nitrides Nanostructures for Energy-Efficiency Devices

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Author(s): Jun Ma, Elison Matioli
Published in: Applied Physics Letters, Issue 112/5, 2018, Page(s) 052101, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5012866

Multi-channel nanowire devices for efficient power conversion

Author(s): L. Nela, J. Ma, C. Erine, P. Xiang, T.-H. Shen, V. Tileli, T. Wang, K. Cheng, E. Matioli
Published in: Nature Electronics, Issue (published online), 2021, ISSN 2520-1131
Publisher: Springer Nature
DOI: 10.1038/s41928-021-00550-8

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Author(s): Reza Soleimanzadeh, Mehdi Naamoun, Riyaz Abdul Khadar, Remco van Erp, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 41/1, 2020, Page(s) 119-122, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2953245

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Author(s): R. Soleimanzadeh, R. A. Khadar, M. Naamoun, R. van Erp, E. Matioli
Published in: Journal of Applied Physics, Issue 126/16, 2019, Page(s) 165113, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5123615

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Author(s): Luca Nela, Georgios Kampitsis, Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 41/1, 2020, Page(s) 99-102, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2957700

GaN-on-Si Quasi-Vertical Power MOSFETs

Author(s): Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/1, 2018, Page(s) 71-74, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2779445

820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

Author(s): Riyaz Abdul Khadar, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/3, 2018, Page(s) 401-404, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2793669

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Author(s): Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/7, 2018, Page(s) 1034-1037, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2841959

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Author(s): Taifang Wang, Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/7, 2018, Page(s) 1038-1041, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2842031

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Author(s): Jun Ma, Minghua Zhu, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/12, 2017, Page(s) 1704-1707, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2761911

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Author(s): Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, Elison Matioli
Published in: Applied Physics Letters, Issue 113/24, 2018, Page(s) 242102, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5064407

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Author(s): Jun Ma, Georgios Kampitsis, Peng Xiang, Kai Cheng, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/2, 2019, Page(s) 275-278, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2887199

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Author(s): Luca Nela, Minghua Zhu, Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/3, 2019, Page(s) 439-442, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2896359

Fully Vertical GaN-on-Si power MOSFETs

Author(s): Riyaz Mohammed Abdul Khadar, Chao Liu, Reza Soleimanzadeh, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/3, 2019, Page(s) 443-446, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2894177

Slanted Tri-Gates for High-Voltage GaN Power Devices

Author(s): Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/9, 2017, Page(s) 1305-1308, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2731799

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

Author(s): Jun Ma, Dante Colao Zanuz, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/9, 2017, Page(s) 1298-1301, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2734644

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Author(s): Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/1, 2017, Page(s) 83-86, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2632044

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

Author(s): Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/3, 2017, Page(s) 367-370, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2661755

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/8, 2019, Page(s) 1289-1292, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2922204

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Author(s): Luca Nela, Remco Van Erp, Georgios Kampitsis, Halil Kerim Yildirim, Jun Ma, Elison Matioli
Published in: IEEE Transactions on Power Electronics, 2020, Page(s) 1-1, ISSN 0885-8993
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2020.3008226

Co-designing electronics with microfluidics for more sustainable cooling

Author(s): Remco van Erp, Reza Soleimanzadeh, Luca Nela, Georgios Kampitsis, Elison Matioli
Published in: Nature, Issue 585/7824, 2020, Page(s) 211-216, ISSN 0028-0836
Publisher: Nature Publishing Group
DOI: 10.1038/s41586-020-2666-1

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Author(s): Jun Ma, Giovanni Santoruvo, Luca Nela, Taifang Wang, Elison Matioli
Published in: IEEE Transactions on Electron Devices, Issue 66/9, 2019, Page(s) 4068-4074, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2019.2925859

Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

Author(s): Remco van Erp, Georgios Kampitsis, Elison Matioli
Published in: IEEE Transactions on Power Electronics, Issue 35/7, 2020, Page(s) 7235-7245, ISSN 0885-8993
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2019.2959736

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Author(s): Georgios Kampitsis, Remco van Erp, Elison Matioli
Published in: 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Page(s) 1609-1615, ISBN 978-1-5386-8330-9
Publisher: IEEE
DOI: 10.1109/apec.2019.8721783

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Author(s): Remco van Erp, Georgios Kampitsis, Luca Nela, Reza Soleimanzadeh Ardebili, Elison Matioli
Published in: 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2020, Page(s) 53-59, ISBN 978-1-7281-9764-7
Publisher: IEEE
DOI: 10.1109/itherm45881.2020.9190356

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Author(s): Luca Nela, Georgios Kampitsis, Halil Kerim Yildirim, Remco Van Erp, Jun Ma, Elison Matioli
Published in: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Page(s) 517-520, ISBN 978-1-7281-4836-6
Publisher: IEEE
DOI: 10.1109/ispsd46842.2020.9170092

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Author(s): Jun Ma, Elison Matioli
Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, Page(s) 192-195, ISBN 978-1-5386-2927-7
Publisher: IEEE
DOI: 10.1109/ISPSD.2018.8393635

645 V quasi-vertical GaN power transistors on silicon substrates

Author(s): Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, Page(s) 240-243, ISBN 978-1-5386-2927-7
Publisher: IEEE
DOI: 10.1109/ISPSD.2018.8393647

High-performance normally-off tri-gate GaN power MOSFETs

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli
Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, Page(s) 71-74, ISBN 978-1-7281-0581-9
Publisher: IEEE
DOI: 10.1109/ispsd.2019.8757690

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

Author(s): Remco van Erp, Georgios Kampitsis, Elison Matioli
Published in: 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Page(s) 1383-1389, ISBN 978-1-5386-8330-9
Publisher: IEEE
DOI: 10.1109/apec.2019.8722308

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Author(s): Jun Ma, Catherine Erine, Minghua Zhu, Nela Luca, Peng Xiang, Kai Cheng, Elison Matioli
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 4.1.1-4.1.4, ISBN 978-1-7281-4032-2
Publisher: IEEE
DOI: 10.1109/iedm19573.2019.8993536

Intellectual Property Rights

Semiconductor devices comprising a three-dimensional field plate

Application/Publication number: US 62/400,643
Date: 2016-09-28
Applicant(s): ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

Multichannel Semiconductor Devices with Three-Dimensional Electrodes

Application/Publication number: US 62/421,393
Date: 2016-11-14

Multichannel Semiconductor Devices with Three-Dimensional Electrodes

Application/Publication number: US 62/421,393
Date: 2016-11-14
Applicant(s): ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

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