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III-Nitrides Nanostructures for Energy-Efficiency Devices

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Publications

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Author(s): Jun Ma, Elison Matioli
Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, Page(s) 192-195
DOI: 10.1109/ISPSD.2018.8393635

645 V quasi-vertical GaN power transistors on silicon substrates

Author(s): Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, Page(s) 240-243
DOI: 10.1109/ISPSD.2018.8393647

GaN-on-Si Quasi-Vertical Power MOSFETs

Author(s): Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/1, 2018, Page(s) 71-74, ISSN 0741-3106
DOI: 10.1109/LED.2017.2779445

820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

Author(s): Riyaz Abdul Khadar, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/3, 2018, Page(s) 401-404, ISSN 0741-3106
DOI: 10.1109/LED.2018.2793669

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Author(s): Jun Ma, Elison Matioli
Published in: Applied Physics Letters, Issue 112/5, 2018, Page(s) 052101, ISSN 0003-6951
DOI: 10.1063/1.5012866

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Author(s): Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/7, 2018, Page(s) 1034-1037, ISSN 0741-3106
DOI: 10.1109/LED.2018.2841959

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Author(s): Taifang Wang, Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 39/7, 2018, Page(s) 1038-1041, ISSN 0741-3106
DOI: 10.1109/LED.2018.2842031

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Author(s): Jun Ma, Minghua Zhu, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/12, 2017, Page(s) 1704-1707, ISSN 0741-3106
DOI: 10.1109/LED.2017.2761911

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Author(s): Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, Elison Matioli
Published in: Applied Physics Letters, Issue 113/24, 2018, Page(s) 242102, ISSN 0003-6951
DOI: 10.1063/1.5064407

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Author(s): Jun Ma, Georgios Kampitsis, Peng Xiang, Kai Cheng, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/2, 2019, Page(s) 275-278, ISSN 0741-3106
DOI: 10.1109/led.2018.2887199

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Author(s): Luca Nela, Minghua Zhu, Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/3, 2019, Page(s) 439-442, ISSN 0741-3106
DOI: 10.1109/led.2019.2896359

Fully Vertical GaN-on-Si power MOSFETs

Author(s): Riyaz Mohammed Abdul Khadar, Chao Liu, Reza Soleimanzadeh, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/3, 2019, Page(s) 443-446, ISSN 0741-3106
DOI: 10.1109/led.2019.2894177

Slanted Tri-Gates for High-Voltage GaN Power Devices

Author(s): Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/9, 2017, Page(s) 1305-1308, ISSN 0741-3106
DOI: 10.1109/LED.2017.2731799

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

Author(s): Jun Ma, Dante Colao Zanuz, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/9, 2017, Page(s) 1298-1301, ISSN 0741-3106
DOI: 10.1109/LED.2017.2734644

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Author(s): Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/1, 2017, Page(s) 83-86, ISSN 0741-3106
DOI: 10.1109/LED.2016.2632044

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

Author(s): Jun Ma, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 38/3, 2017, Page(s) 367-370, ISSN 0741-3106
DOI: 10.1109/LED.2017.2661755