III-Nitrides Nanostructures for Energy-Efficiency Devices

Información del proyecto

In-Need

Identificador del acuerdo de subvención: 679425

DOI

10.3030/679425

Proyecto cerrado

Fecha de la firma de la CE 11 Febrero 2016

Fecha de inicio 1 Febrero 2016

Fecha de finalización 31 Enero 2021

Financiado con arreglo a

• EXCELLENT SCIENCE - European Research Council (ERC)

Coste total

€ 1 750 000,00

Aportación de la UE

€ 1 750 000,00

Coordinado por

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Publicaciones

Peer reviewed articles (23)

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Autores: Jun Ma, Elison Matioli
Publicado en: Applied Physics Letters, Edición 112/5, 2018, Página(s) 052101, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/1.5012866

Multi-channel nanowire devices for efficient power conversion

Autores: L. Nela, J. Ma, C. Erine, P. Xiang, T.-H. Shen, V. Tileli, T. Wang, K. Cheng, E. Matioli
Publicado en: Nature Electronics, Edición (published online), 2021, ISSN 2520-1131
Editor: Springer Nature
DOI: 10.1038/s41928-021-00550-8

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Autores: Reza Soleimanzadeh, Mehdi Naamoun, Riyaz Abdul Khadar, Remco van Erp, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 41/1, 2020, Página(s) 119-122, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2953245

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Autores: R. Soleimanzadeh, R. A. Khadar, M. Naamoun, R. van Erp, E. Matioli
Publicado en: Journal of Applied Physics, Edición 126/16, 2019, Página(s) 165113, ISSN 0021-8979
Editor: American Institute of Physics
DOI: 10.1063/1.5123615

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Autores: Luca Nela, Georgios Kampitsis, Jun Ma, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 41/1, 2020, Página(s) 99-102, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2957700

GaN-on-Si Quasi-Vertical Power MOSFETs

Autores: Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 39/1, 2018, Página(s) 71-74, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2779445

820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

Autores: Riyaz Abdul Khadar, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 39/3, 2018, Página(s) 401-404, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2793669

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Autores: Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 39/7, 2018, Página(s) 1034-1037, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2841959

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Autores: Taifang Wang, Jun Ma, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 39/7, 2018, Página(s) 1038-1041, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2842031

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Autores: Jun Ma, Minghua Zhu, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 38/12, 2017, Página(s) 1704-1707, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2761911

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Autores: Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, Elison Matioli
Publicado en: Applied Physics Letters, Edición 113/24, 2018, Página(s) 242102, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/1.5064407

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Autores: Jun Ma, Georgios Kampitsis, Peng Xiang, Kai Cheng, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 40/2, 2019, Página(s) 275-278, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2887199

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Autores: Luca Nela, Minghua Zhu, Jun Ma, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 40/3, 2019, Página(s) 439-442, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2896359

Fully Vertical GaN-on-Si power MOSFETs

Autores: Riyaz Mohammed Abdul Khadar, Chao Liu, Reza Soleimanzadeh, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 40/3, 2019, Página(s) 443-446, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2894177

Slanted Tri-Gates for High-Voltage GaN Power Devices

Autores: Jun Ma, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 38/9, 2017, Página(s) 1305-1308, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2731799

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

Autores: Jun Ma, Dante Colao Zanuz, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 38/9, 2017, Página(s) 1298-1301, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2734644

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Autores: Jun Ma, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 38/1, 2017, Página(s) 83-86, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2632044

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

Autores: Jun Ma, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 38/3, 2017, Página(s) 367-370, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2661755

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Autores: Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli
Publicado en: IEEE Electron Device Letters, Edición 40/8, 2019, Página(s) 1289-1292, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2922204

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Autores: Luca Nela, Remco Van Erp, Georgios Kampitsis, Halil Kerim Yildirim, Jun Ma, Elison Matioli
Publicado en: IEEE Transactions on Power Electronics, 2020, Página(s) 1-1, ISSN 0885-8993
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2020.3008226

Co-designing electronics with microfluidics for more sustainable cooling

Autores: Remco van Erp, Reza Soleimanzadeh, Luca Nela, Georgios Kampitsis, Elison Matioli
Publicado en: Nature, Edición 585/7824, 2020, Página(s) 211-216, ISSN 0028-0836
Editor: Nature Publishing Group
DOI: 10.1038/s41586-020-2666-1

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Autores: Jun Ma, Giovanni Santoruvo, Luca Nela, Taifang Wang, Elison Matioli
Publicado en: IEEE Transactions on Electron Devices, Edición 66/9, 2019, Página(s) 4068-4074, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2019.2925859

Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

Autores: Remco van Erp, Georgios Kampitsis, Elison Matioli
Publicado en: IEEE Transactions on Power Electronics, Edición 35/7, 2020, Página(s) 7235-7245, ISSN 0885-8993
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2019.2959736

Conference proceedings (8)

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Autores: Georgios Kampitsis, Remco van Erp, Elison Matioli
Publicado en: 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Página(s) 1609-1615, ISBN 978-1-5386-8330-9
Editor: IEEE
DOI: 10.1109/apec.2019.8721783

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Autores: Remco van Erp, Georgios Kampitsis, Luca Nela, Reza Soleimanzadeh Ardebili, Elison Matioli
Publicado en: 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2020, Página(s) 53-59, ISBN 978-1-7281-9764-7
Editor: IEEE
DOI: 10.1109/itherm45881.2020.9190356

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Autores: Luca Nela, Georgios Kampitsis, Halil Kerim Yildirim, Remco Van Erp, Jun Ma, Elison Matioli
Publicado en: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Página(s) 517-520, ISBN 978-1-7281-4836-6
Editor: IEEE
DOI: 10.1109/ispsd46842.2020.9170092

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Autores: Jun Ma, Elison Matioli
Publicado en: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, Página(s) 192-195, ISBN 978-1-5386-2927-7
Editor: IEEE
DOI: 10.1109/ISPSD.2018.8393635

645 V quasi-vertical GaN power transistors on silicon substrates

Autores: Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Publicado en: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, Página(s) 240-243, ISBN 978-1-5386-2927-7
Editor: IEEE
DOI: 10.1109/ISPSD.2018.8393647

High-performance normally-off tri-gate GaN power MOSFETs

Autores: Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli
Publicado en: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, Página(s) 71-74, ISBN 978-1-7281-0581-9
Editor: IEEE
DOI: 10.1109/ispsd.2019.8757690

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

Autores: Remco van Erp, Georgios Kampitsis, Elison Matioli
Publicado en: 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Página(s) 1383-1389, ISBN 978-1-5386-8330-9
Editor: IEEE
DOI: 10.1109/apec.2019.8722308

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Autores: Jun Ma, Catherine Erine, Minghua Zhu, Nela Luca, Peng Xiang, Kai Cheng, Elison Matioli
Publicado en: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Página(s) 4.1.1-4.1.4, ISBN 978-1-7281-4032-2
Editor: IEEE
DOI: 10.1109/iedm19573.2019.8993536

Derechos de propiedad intelectual

Patent (2)

Semiconductor devices comprising a three-dimensional field plate

Número de solicitud/publicación: US 62/400,643
Fecha: 2016-09-28
Solicitante(s): ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

Multichannel Semiconductor Devices with Three-Dimensional Electrodes

Número de solicitud/publicación: US 62/421,393
Fecha: 2016-11-14
Solicitante(s): ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE