Carrier-selective contacts for silicon photovoltaics based on broadband-transparent oxides

Información del proyecto

COLIBRI

Identificador del acuerdo de subvención: 706744

DOI

10.3030/706744

Proyecto finalizado el 31 Agosto 2017

Fecha de la firma de la CE 15 Marzo 2016

Fecha de inicio 1 Junio 2016

Fecha de finalización 31 Mayo 2018

Financiado con arreglo a

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Coste total

€ 175 419,60

Aportación de la UE

€ 175 419,60

Coordinado por

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland

Objetivo

This project aims at a cost-effective efficiency enhancement of Si solar cells towards their theoretical maximum of about 29% by moving away from the diffused-junction paradigm. This will reduce the energy fabrication costs on the €/kWh level and thereby increase the competiveness and profitability of photovoltaic systems. Crystalline Si (c-Si) solar cells are since decades the most established photovoltaic technology. Their main advantages are long lifetime (>25 years), non-toxicity and the high abundance of Si. However, for full competitiveness with traditional sources of electricity, important new steps need to be taken to increase their performance.
An innovative contacting scheme will be developed that eliminates the main loss mechanisms in c-Si solar cells arising from doped pn-junctions and the direct contact of metal with Si. The novel contacts will be broadband optically transparent, generate a highly passivating and carrier-selective interface to Si and will enable solar cells without doped pn-junctions. No cost-intensive patterning technique is required for the device fabrication and parasitic optical absorption, as present in Si heterojunction solar cells, will be minimized. The novel contacts consist of three layers: a 1-2 nm thick tunnelling SiO2 layer for chemical passivation of the Si surface, a wide-bandgap conductive metal oxide layer providing a specific energy band alignment, and a highly conductive transparent oxide (TCO) for carrier transport to external metal contacts and optimum light coupling into the solar cell device. The contacts will be used for the fabrication of Si solar cells which are devoid of doped pn-junctions and achieve both high open-circuit voltages and photo currents. The structure of the photovoltaic device will be optimized for the application in regular 1-sun modules and for both III-V/Si and perovskite/Si tandem cell applications with potential for flat-plate efficiencies well above 30%.

Ámbito científico (EuroSciVoc)

• ingeniería y tecnología › ingeniería de materiales › sólidos amorfos › semiconductores amorfos
• ciencias naturales › ciencias químicas › química inorgánica › compuestos inorgánicos
• ciencias naturales › ciencias físicas › electromagnetismo y electrónica › dispositivo semiconductor
• ciencias naturales › ciencias químicas › química inorgánica › metaloides
• ingeniería y tecnología › ingeniería ambiental › energía y combustibles › energía renovable › energía solar › fotovoltaico

Palabras clave

• high efficiency photovoltaics
• c-Si solar cells
• carrier-selective contacts
• tandem solar cells

Programa(s)

• H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions PROGRAMA PRINCIPAL
  
• H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility
  

Tema(s)

• MSCA-IF-2015-EF - Marie Skłodowska-Curie Individual Fellowships (IF-EF)
  

Régimen de financiación

MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)

Convocatoria de propuestas

H2020-MSCA-IF-2015

Coordinador

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

• Aportación neta de la UEn: € 175 419,60
• Dirección: BATIMENT CE 3316 STATION 1 ; 1015 LAUSANNE ; Suiza
• Región: Schweiz/Suisse/Svizzera › Région lémanique › Vaud
• Tipo de actividad: Higher or Secondary Education Establishments
• Coste total: € 175 419,60