Double side contacted cells with innovative carrier-selective contacts

Informations projet

DISC

N° de convention de subvention: 727529

DOI 10.3030/727529

Projet clôturé

Date de signature de la CE 15 Septembre 2016

Date de début 1 Octobre 2016

Date de fin 30 Septembre 2019

Financé au titre de

• SOCIETAL CHALLENGES - Secure, clean and efficient energy

Coût total € 6 620 246,25

Contribution de l’UE € 4 743 518,75

Coordonné par

INSTITUT FUR SOLARENERGIEFORSCHUNG GMBH
Germany

Livrables

Documents, reports (4)

Recommendation on the optimization of TCOs, CSJs and multi-wires for optimized optical performance on module level

The development of high performance modules in WP4 will be supported by optimizing optical performance on module level. Technology-related target requirements for TCOs, CSJs and multi-wires for best optical performance will be determined.

Report on social LCA in accordance with international guidance on social LCA

The concept of social acceptance with be assessed using the Social Life Cycle Assessment (social LCA) framework, which has been developed by UNEP and SETAC in accordance with the ISO 14040/44 standards for LCA. The study will assess the potential positive and negative social impacts, including those that are unexpected and unintended.

Report on environmental LCA in accordance with international standards on LCA

The solar cell prototypes will be assessed with an LCA study in accordance with the ISO standards for LCA providing scientific evidence on traditional environmental indicators from primary energy consumption, GHG emissions to water footprint and land use amongst others.

Report on the Round Robin on cells with advanced front-side metallization schemes

The measurement results obtained by each partner will be compared and differences will be discussed. Consequently, measurement rules will be deduced for improvement of accuracy and comparability of calibrated measurements.

Websites, patent fillings, videos etc. (2)

Project Identity Set

The project identity set includes a logo, an initial brochure (project presentation including challenges, context, objectives, results, partnership...) a slide Template as well as a poster presentation for public event/ workshop / conference

Public website

Public website set up at the beginning of the project, containing the following sections: Section for open access by the general public with useful and interesting information about the project, i.e. aims & objectives, technological implications, partners list, funding details, links to related sites....; an intranet section which will alow fruitful collaboration within the DISC consortium members

Publications

Conference proceedings (33)

Realization of Passivating Contacts Using Industrial Scale PECVD Equipment

Auteurs: J.-I. Polzin et al
Publié dans: SiliconPV 2018 , 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Formation of a resistive SiOx layer at the interface of poly-Si to aluminum-doped zinc oxide

Auteurs: T. Wietler et al
Publié dans: SiliconPV 2018 , 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

"EU Project Special Presentation: Rules and targets of ""Sister projects"" "

Auteurs: B. Min and K. Ding
Publié dans: SiliconPV 2018, 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Novel Mask-less Plating Metallization Route for Bifacial Silicon Heterojunction Solar Cells

Auteurs: T. Hatt et al
Publié dans: SiliconPV 2018 , 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Temperature-Dependent Contact Resistance Measurements on Carrier-Selective Poly-Si on Oxide Junctions

Auteurs: N. Folchert et al
Publié dans: SiliconPV 2018 , 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Silicon rich silicon carbide as poly-Si passivating contacts for Silicon solar cells

Auteurs: G. Nogay et al
Publié dans: SiliconPV 2018 , 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Increasing the Photo-generated Current in Solar Cells with Passivating Contacts by Reducing the Poly-Si Deposition Temperature

Auteurs: B. Min et al
Publié dans: SiliconPV 2018, 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Analysis of the influence of ITO metallization on phosphorus-doped nanostructured silicon oxide passivating electron contacts

Auteurs: J. Stückelberger et al
Publié dans: SiliconPV 2018 , 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Transparent Conductive Oxides for Passivating Rear Contacts

Auteurs: L. Tutsch et al.
Publié dans: SiliconPV 2018, 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Efficient Hole Extraction for Metal Oxide Based Silicon Heterojunction Solar Cells: A Simulation Study

Auteurs: C. Messmer et al.
Publié dans: SiliconPV 2018, 2018
Éditeur: SiliconPV 2018 (Mar 19-21 2018)

Multi-Wire Interconnection of Back-Contacted Silicon Heterojunction Solar Cells

Auteurs: A. Faes et al.
Publié dans: Metallization & Interconnection Workshop 2017 , 2017
Éditeur: Metallization & Interconnection Workshop 2017 (Oct 22-24 2017)

Reliable Copper Plating Process for Bifiacial Heterojunction Cells

Auteurs: A. Lachowicz et al.
Publié dans: Metallization & Interconnection Workshop 2017, 2017
Éditeur: Metallization & Interconnection Workshop 2017 (Oct 22-24 2017)

Metallization of Silicon Carbide- and Silicon Oxide-Based Layer Stacks as Passivating Contacts for Silicon Solar Cells

Auteurs: A. Ingenito et al.
Publié dans: Metallization & Interconnection Workshop 2017, 2017
Éditeur: Metallization & Interconnection Workshop 2017 (Oct 22-24 2017)

Locally Conductive Transport Channel Formation in High Temperature Stable Hole-Selective Silicon-Rich Silicon Carbide Passivating Contact

Auteurs: G. Nogay et al.
Publié dans: EU PVSEC 2017, 2017
Éditeur: EU PVSEC 2017 (Sep 25-29 2017)

Wide-Band Gap Silicon Carbide for Front Side Carrier Selective Contacts

Auteurs: A. Ingenito et al.
Publié dans: EU PVSEC 2017 , 2017
Éditeur: EU PVSEC 2017 (Sep 25-29 2017)

Mixed-Phase Silicon Oxide Layers with Phosphorus and Boron Doping for CoAnnealed Transparent Passivating Front and Rear Contacts

Auteurs: J. Stuckelberger et al.
Publié dans: EU PVSEC 2017, 2017
Éditeur: EU PVSEC 2017 (Sep 25-29 2017)

Copper Plating Chemistry for Solar Cells

Auteurs: A. Lachowicz et al.
Publié dans: EU PVSEC 2017 , 2017
Éditeur: EU PVSEC 2017 (Sep 25-29 2017)

Principles of Carrier-Selective Contacts Based on Induced Junctions

Auteurs: Bivour et al.
Publié dans: EU PVSEC 2017 , 2017
Éditeur: EU PVSEC 2017 (Sep 25-29 2017)

Influence of the Transparent Electrode Sputtering Process on the Interface Passivation Quality of Silicon Heterojunction Solar Cells

Auteurs: L. Tutsch et al.
Publié dans: EU PVSEC 2017, 2017
Éditeur: EU PVSEC 2017 (Sep 25-29 2017)

MoOX and WOX based hole-selective contacts for wafer-based Si solar cells

Auteurs: Essig, Stephanie; Dréon, Julie; Werner, Jérémie; Löper, Philipp; De Wolf, Stefaan; Boccard, Mathieu; Ballif, Christophe
Publié dans: Numéro 1, 2017
Éditeur: Zenodo
DOI: 10.5281/zenodo.1087463

PECVD Layers for High and Low Temperature Improved Industrial Solar Cell Processes

Auteurs: C. Allebé at al.
Publié dans: 2017
Éditeur: PVSEC

High volume manufacturing plating equipment for metallization of high efficiency silicon solar cells

Auteurs: M. Zwegers, J. Bertens, G. van de Ven
Publié dans: 2017
Éditeur: PV workshop

Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

Auteurs: Elise Bruhat, Thibaut Desrues, Bernadette Grange, Danièle Blanc-Pélissier, Sébastien Dubois
Publié dans: AIP Conference Proceedings volume 1999, 2018, Page(s) 040004
Éditeur: Author(s)
DOI: 10.1063/1.5049267

From Wafers to Modules to Mass Production: Solving All Bottlenecks in Silicon Heterojunction Technology

Auteurs: Ballif, Christofer; Bocard, Mathieu; Despeisse, Mathieu
Publié dans: Numéro 10, 2018
Éditeur: WIP GmbH & Co Planungs-KG
DOI: 10.5281/zenodo.1744856

Principles of carrier-selective contacts based on induced junctions

Auteurs: Bivour, Martin; Meßmer, Christoph Alexander; Neusel, Lisa; Zähringer, Florian; Schön, Jonas; Glunz, Stefan W.; Hermle, Martin
Publié dans: Fraunhofer ISE, Numéro 9, 2017
Éditeur: WIP GmbH & Co Planungs-KG
DOI: 10.4229/EUPVSEC20172017-2BO.4.2

Novel mask-less plating metallization route for bifacial silicon heterojunction solar cells

Auteurs: Thibaud Hatt, Vivek P. Mehta, Jonas Bartsch, Sven Kluska, Mike Jahn, Dietmar Borchert, Markus Glatthaar
Publié dans: AIP Conference Proceedings volume 1999, 2018, Page(s) 040009
Éditeur: Author(s)
DOI: 10.1063/1.5049272

Efficient hole extraction for metal oxide based silicon heterojunction solar cells: A simulation study

Auteurs: Christoph Messmer, Martin Bivour, Jonas Schön, Martin Hermle
Publié dans: AIP Conference Proceedings volume 1999, 2018, Page(s) 040013
Éditeur: AIP Publishing
DOI: 10.1063/1.5049276

p+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications

Auteurs: Robby Peibst, Michael Rienacker, Byungsul Min, Christina Klamt, Raphael Niepelt, Tobias Wietler, Thorsten Dullweber, Eduard Sauter, Jens Hibner, Michael Oestreich, Rolf Brendel
Publié dans: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, Page(s) 2635-2637, ISBN 978-1-5386-8529-7
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/pvsc.2018.8548032

A passivating contact concept compatible with a short thermal treatment

Auteurs: Andrea Ingenito, Christophe Allebe, Gizem Nogay, Jorg Horzel, Philippe Wyss, Josua Andreas Stuckelberger, Matthieu Despeisse, Franz-Josef Haug, Christophe Ballif
Publié dans: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, Page(s) 1524-1525, ISBN 978-1-5386-8529-7
Éditeur: IEEE
DOI: 10.1109/pvsc.2018.8547626

Establishing the “native oxide barrier layer for selective electroplated” metallization for bifacial silicon heterojunction solar cells

Auteurs: Thibaud Hatt, Jonas Bartsch, Sven Kluska, Markus Glatthaar
Publié dans: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Page(s) 040005
Éditeur: AIP Publishing
DOI: 10.1063/1.5123832

Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration

Auteurs: Antoine Veau, Thibaut Desrues, Audrey Morisset, Frank Torregrosa, Laurent Roux, Anne Kaminski-Cachopo, Quentin Rafhay, Sébastien Dubois
Publié dans: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Page(s) 040021
Éditeur: AIP Publishing
DOI: 10.1063/1.5123848

TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties

Auteurs: Elise Bruhat, Thibaut Desrues, Danièle Blanc-Pélissier, Benoît Martel, Raphaël Cabal, Sébastien Dubois
Publié dans: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Page(s) 040001
Éditeur: AIP Publishing
DOI: 10.1063/1.5123828

Advances with resist-free copper plating approaches for the metallization of silicon heterojunction solar cells

Auteurs: Thibaud Hatt, Jonas Bartsch, Yannick Franzl, Sven Kluska, Markus Glatthaar
Publié dans: INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019), 2019, Page(s) 020010
Éditeur: AIP Publishing
DOI: 10.1063/1.5125875

Peer reviewed articles (16)

Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements

Auteurs: Frank Feldmann, Gizem Nogay, Philipp Löper, David L. Young, Benjamin G. Lee, Paul Stradins, Martin Hermle, Stefan W. Glunz
Publié dans: Solar Energy Materials and Solar Cells, Numéro 178, 2018, Page(s) 15-19, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2018.01.008

Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells

Auteurs: Josua Stuckelberger, Gizem Nogay, Philippe Wyss, Andrea Ingenito, Christophe Allebe, Jorg Horzel, Brett A. Kamino, Matthieu Despeisse, Franz-Josef Haug, Philipp Loper, Christophe Ballif
Publié dans: IEEE Journal of Photovoltaics, Numéro 8/2, 2018, Page(s) 389-396, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/JPHOTOV.2017.2779871

Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

Auteurs: Stephanie Essig, Julie Dréon, Esteban Rucavado, Mathias Mews, Takashi Koida, Mathieu Boccard, Jérémie Werner, Jonas Geissbühler, Philipp Löper, Monica Morales-Masis, Lars Korte, Stefaan De Wolf, Christophe Ballif
Publié dans: Solar RRL, Numéro 2/4, 2018, Page(s) 1700227, ISSN 2367-198X
Éditeur: Wiley- VCH
DOI: 10.1002/solr.201700227

Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts

Auteurs: Massimo Nicolai, Mauro Zanuccoli, Frank Feldmann, Martin Hermle, Claudio Fiegna
Publié dans: IEEE Journal of Photovoltaics, Numéro 8/1, 2018, Page(s) 103-109, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/JPHOTOV.2017.2775142

TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties

Auteurs: Elise Bruhat, Thibaut Desrues, Bernadette Grange, Helène Lignier, Danièle Blanc-Pélissier, Sébastien Dubois
Publié dans: Energy Procedia, Numéro 124, 2017, Page(s) 829-833, ISSN 1876-6102
Éditeur: Zenodo
DOI: 10.1016/j.egypro.2017.09.354

Selectivity issues of MoO x based hole contacts

Auteurs: Lisa Neusel, Martin Bivour, Martin Hermle
Publié dans: Energy Procedia, Numéro 124, 2017, Page(s) 425-434, ISSN 1876-6102
Éditeur: Elsevier
DOI: 10.1016/j.egypro.2017.09.268

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

Auteurs: Takuya Matsui, Martin Bivour, Paul Ndione, Paul Hettich, Martin Hermle
Publié dans: Energy Procedia, Numéro 124, 2017, Page(s) 628-634, ISSN 1876-6102
Éditeur: Elsevier
DOI: 10.1016/j.egypro.2017.09.093

Numerical Simulation of Silicon Heterojunction Solar Cells Featuring Metal Oxides as Carrier-Selective Contacts

Auteurs: Christoph Messmer, Martin Bivour, Jonas Schon, Stefan W. Glunz, Martin Hermle
Publié dans: IEEE Journal of Photovoltaics, Numéro 8/2, 2018, Page(s) 456-464, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/JPHOTOV.2018.2793762

A Study on the Charge Carrier Transport of Passivating Contacts

Auteurs: Frank Feldmann, Gizem Nogay, Jana-Isabelle Polzin, Bernd Steinhauser, Armin Richter, Andreas Fell, Christian Schmiga, Martin Hermle, Stefan W. Glunz
Publié dans: IEEE Journal of Photovoltaics, Numéro 8/6, 2018, Page(s) 1503-1509, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/JPHOTOV.2018.2870735

Requirements for efficient hole extraction in transition metal oxide-based silicon heterojunction solar cells

Auteurs: Christoph Messmer, Martin Bivour, Jonas Schön, Martin Hermle
Publié dans: Journal of Applied Physics, Numéro 124/8, 2018, Page(s) 085702, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5045250

Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions

Auteurs: N. Folchert, M. Rienäcker, A.A. Yeo, B. Min, R. Peibst, R. Brendel
Publié dans: Solar Energy Materials and Solar Cells, Numéro 185, 2018, Page(s) 425-430, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2018.05.046

High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

Auteurs: Tobias F. Wietler, Byungsul Min, Sina Reiter, Yevgeniya Larionova, Rolf Reineke-Koch, Frank Heinemeyer, Rolf Brendel, Armin Feldhoff, Jan Krugener, Dominic Tetzlaff, Robby Peibst
Publié dans: IEEE Journal of Photovoltaics, Numéro 9/1, 2019, Page(s) 89-96, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/jphotov.2018.2878337

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Auteurs: Andrea Ingenito, Gizem Nogay, Josua Stuckelberger, Philippe Wyss, Luca Gnocchi, Christophe Allebe, Jorg Horzel, Matthieu Despeisse, Franz-Josef Haug, Philipp Loper, Christophe Ballif
Publié dans: IEEE Journal of Photovoltaics, Numéro 9/2, 2019, Page(s) 346-354, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/jphotov.2018.2886234

25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a p -type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts

Auteurs: G. Nogay, F. Sahli, J. Werner, R. Monnard, M Boccard, M. Despeisse, F-J. Haug, Q. Jeangros, A. Ingenito, C. Ballif
Publié dans: ACS Energy Letters, Numéro 4/4, 2019, Page(s) 844-845, ISSN 2380-8195
Éditeur: American Chemical Society
DOI: 10.1021/acsenergylett.9b00377

Contributions to the Contact Resistivity in Fired Tunnel-Oxide Passivating Contacts for Crystalline Silicon Solar Cells

Auteurs: Franz-Josef Haug, Andrea Ingenito, Frank Meyer, Sofia Libraro, Noa Bolis, Juan Jose Diaz Leon, Christophe Allebe, Christophe Ballif
Publié dans: IEEE Journal of Photovoltaics, 2019, Page(s) 1-6, ISSN 2156-3381
Éditeur: IEEE Electron Devices Society
DOI: 10.1109/jphotov.2019.2939880

Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx / poly-Si passivating contacts

Auteurs: Leonard Tutsch, Frank Feldmann, Jana Polzin, Christoph Luderer, Martin Bivour, Anamaria Moldovan, Jochen Rentsch, Martin Hermle
Publié dans: Solar Energy Materials and Solar Cells, Numéro 200, 2019, Page(s) 109960, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2019.109960

Other (30)

Copper Plating Process for Bifacial Heterojunction Solar Cells

Auteurs: A. Lachowicz, J. Geissbühler, A. Faes, J. Champliaud, F. Debrot, E. Kobayashi, J. Horzel, C. Ballif, M. Despeisse
Publié dans: EU PVSEC, Numéro 2AV.3.22, 2017, Page(s) 753 - 756
Éditeur: WIP GmbH & Co Planungs-KG
DOI: 10.4229/eupvsec20172017-2av.3.22

Reliable Copper Plating Process for Bifiacial Heterojunction Cells

Auteurs: Agata Lachowicz, Jonas Geissbühler, Antonin Faes, Jonathan Champliaud, Joost Hermans, Jean-Francois Lerat, Pierre-Jean Ribeyron, Charles Roux, Guillaume Wahli, Pierre Pape, Benjamin Strahm, Jörg Horzel, Christophe Ballif and Matthieu Despeisse
Publié dans: Metallization Workshop, Numéro Mon, S4, 2017
Éditeur: N/C

Influence of ITO Sputter Deposition on Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts4

Auteurs: J. Stuckelberger, P. Wyss, G. Nogay, J. Horze, C. Allebé, M. Despeisse, A. Ingenito, F.-J. Haug, P. Löper and C. Ballif
Publié dans: SiliconPV 2018, Numéro Wed, PS3, 3-B-18, 2018
Éditeur: N/C

Assessing the Life Cycle Impacts of a Novel Renewable Energy Technology

Auteurs: Andy Whiting, Bryan Hartlin
Publié dans: 2018 MRS Spring Meeting, Numéro 4.4.2018, Wed, 8:30 AM, EN16.03.02, 2018
Éditeur: N/C

High Efficiency Matters – The DISC Project

Auteurs: M Topič (presenter), M Bokalič (poster)
Publié dans: ETIP PV - Quality and sustainability of PV systems conference, 2018
Éditeur: N/C

A Simple Process Flow For Silicon Solar Cells With Co-Annealing Of Electron And Hole Selective Passivating Contacts

Auteurs: Gizem Nogay, Andrea Ingenito, Esteban Rucavado, Josua Stückelberger, Quentin Jeangros, Philippe Wyss, Monica Morales-Masis, Franz-Josef Haug, Philipp Löper, Christophe Ballif
Publié dans: WCPEC-7, Numéro Oral-Area 4, Tue 1:30; 461, 2018
Éditeur: IEEE Electron Devices Society

Status of the EU H2020 DISC project: European collaboration in research and development of high efficient Double side contacted cells with Innovative carrier-Selective Contacts

Auteurs: B. Min, T. Wietler, S. Bordihn, R. Peibst, T. Desrues, P. Carroy, J. Jourdan, M. Hermle, F. Feldmann, J. Bartsch, C. Allebée, L. Ding, J. Horzel, A. Lachowicz, A. Faes, A. Ingenito, F. Haug, E. Schneiderlöchner, V. Linss, K. Luedemann, A. Čampa, M. Bokalič, M. Topič, M. Zwegers, B. Hartlin, B. Field, B. Bénédicte, Z. Adam, J. Penaud, S. Filonovich, E. Marcon, J. Chupin, F. Tamini
Publié dans: EU PVSEC 2018, Numéro 2BP.1.4, 2018, Page(s) 229 - 232, ISBN 3-936338-50-7
Éditeur: WIP GmbH & Co Planungs-KG

Optimizing TCO Layers for Novel Bifacial Crystalline Silicon Homojunction Solar Cells Integrating Passivated Contacts

Auteurs: E. Bruhat, T. Desrues, B. Grange, S. Dubois, D. Blanc-Pélissier
Publié dans: EU PVSEC 2018, Numéro 2AV.2.38, 2018, Page(s) 610-613, ISBN 3-936338-50-7
Éditeur: WIP GmbH & Co Planungs-KG
DOI: 10.4229/35theupvsec20182018-2av.2.38

SiCx- and SiOx-based passivating contacts for high-efficiency silicon solar cells

Auteurs: F.-J. Haug, J. Stückelberger, G. Nogay, P. Wyss, M. Lehmann, L. Gnocchi, C. Allebé, J. Horzel, M. Despeisse, A. Ingenito, C. Ballif
Publié dans: EU PVSEC 2018, Numéro 2CO.11.2, 2018
Éditeur: WIP GmbH & Co Planungs-KG

Transparent Passivating Contacts for Front Side Application

Auteurs: J. Stückelberger, G. Nogay, P. Wyss, L. Gnocchi, M.J. Lehmann, L. Antognini, J.J. Diaz Leon, L. Ding, J. Horzel, C. Allebé, S. Nicolay, M. Despeisse, F.-J. Haug, A. Ingenito, C. Ballif
Publié dans: EU PVSEC 2018, Numéro 2CO.11.6, 2018
Éditeur: WIP GmbH & Co Planungs-KG

Processing Routes and Costs for Copper Plating on Bifacial Heterojunction Cells

Auteurs: A. Lachowicz, J. Geissbühler, A. Faes, J. Champliaud, J. Horzel, C. Ballif, M. Despeisse, M. Sciuto, A. Battaglia, J.-F. Lerat, D. Muñoz, P.-J. Ribeyron, P. Papet, B. Strahm
Publié dans: EU PVSEC 2018, Numéro 2CO.12.5, 2018
Éditeur: WIP GmbH & Co Planungs-KG

Engineering of Thin Film Silicon Materials for High Efficiency Crystalline Silicon Solar Cells

Auteurs: M. Despeisse, B. Paviet-Salomon, A. Descoeudres, L.-L. Senaud, C. Allebé, J. Levrat, J. Horzel, A. Lachowicz, F. Debrot, J. Champliaud, A. Faes, N. Badel, J. Geissbühler, S. Martin de Nicolàs, G. Christmann, J.J. Diaz Leon, L. Ding, S. Nicolay, M. Boccard, C. Ballif
Publié dans: EU PVSEC 2018, Numéro 2DO.1.1, 2018
Éditeur: WIP GmbH & Co Planungs-KG

Transparent conductive oxide screening on high temperature passivating contact solar cells for improved passivation and cell efficiency

Auteurs: J.J. Diaz Leon, L. Ding, G. Christmann, Gizem Nogay, J. Stuckelberger, Philippe Wyss, Franz-Josef Haug, Andrea Ingenito, C. Allebe, M. Despeisse, S. Nicolay and Christophe Ballif
Publié dans: EU PVSEC 2018, Numéro 2DO.2.1, 2018
Éditeur: WIP GmbH & Co Planungs-KG

High mobility IWO for improved current in heterojunction technology solar cells

Auteurs: L. Ding, J. Diaz, G. Christmann, L.-L. Senaud, L. Barraud, A. Descoeudres, N. Badel, M. Despeisse, S. Nicolay, and C. Ballif
Publié dans: EU PVSEC 2018, Numéro 2DO.2.5, 2018
Éditeur: WIP GmbH & Co Planungs-KG

New Characterization Method for Determination of Surface Recombination Rate of Carrier Selective Junctions

Auteurs: Andrej Čampa, Franc Smole, Marko Topič
Publié dans: Silicon PV 2019, Numéro Mon, April 08; 13:00-14:00 – Poster Session 1: S1-03, 2019
Éditeur: N/C

Integration Avenues in Solar Cells Implementing Passivating Contacts

Auteurs: Juan J Diaz Leon, Christophe Allebé, Joerg Horzel, Gizem Nogay, Antoine Descoeudres, Gabriel Christmann, Laura Ding, Nicolas Badel, Andrea Ingenito, Matthieu Despeisse, Sylvain Nicolay, Christophe Ballif
Publié dans: Silicon PV 2019, Numéro Mon, April 8; 16:00-17:00 – Poster Session 2: S2-09, 2019
Éditeur: N/C

TCOs for Poly-Si Based Passivating Contacts

Auteurs: Leonard Tutsch, Frank Feldmann, Bart Macco, Jana Polzin, Martin Bivour, Erwin Kessel, Martin Hermle
Publié dans: Silicon PV 2019, Numéro Wed April 10; 14:30 – Session 10, 2019
Éditeur: N/C

A Route to High Efficiency PV – The DISC Project

Auteurs: B. Min, T. Wietler, S. Bordihn, R. Peibst, T. Desrues, P. Carroy, J. Jourdan, M. Hermle, F. Feldmann, J. Bartsch, C. Allebe, L. Ding, A. Ingenito, F. Haug, E. Schneiderlöchner, V. Linß, R. Köhler, A. Čampa, M. Bokalič, M. Topič, M. Zwegers, A. Hovestad, B. Hartlin, C. Poulopoulos, S. Galley, A. Richter, B. Bénédicte, A. Zoltan, J. Penaud, N. Harder, J. Chupin
Publié dans: ETIP PV - Readying for the TW Era, Numéro May 28 2019, 2019
Éditeur: N/C

Contacting n+ Poly-Si Junctions with Fired AZO Layers: A Promising Approach for High Temperature Passivated Contact Solar Cells

Auteurs: Elise Bruhat, Thibaut Desrues, Danièle Blanc-Pélissier, Benoît Martel, Raphaël Cabal, Sébastien Dubois
Publié dans: IEEE PVSC 2019, Numéro Thu, Jun 20; 10:30AM, Area 4, 2019
Éditeur: IEEE Electron Devices Society

PECVD-based layers for improved high temperature industrial solar cell processes

Auteurs: C. Allebé, J.J. Diaz Leon, A. Ingenito, A. Descoeudres, G. Nogay, P. Wyss, Franz-Josef Haug, M. Despeisse, S. Nicolay, C. Ballif
Publié dans: IEEE PVSC 2019, Numéro Thu, Jun 20; 8:30AM, Area 4, 2019
Éditeur: IEEE Electron Devices Society

Fired Hydrogenated AZO Layers: A New Passivation Approach for High Temperature Passivated Contact Solar Cells

Auteurs: E. Bruhat, T. Desrues, D. Blanc-Pélissier, B. Martel, R. Cabal, S. Dubois
Publié dans: EU PVSEC 2019, Numéro 2CO.9.1, 2019
Éditeur: WIP GmbH & Co Planungs-KG

Polysilicon Layers Doped by Plasma Immersion Ion Implantation (PIII): New Paths for Industrial Processing of Passivated Contacts Solar Cells

Auteurs: A. Veau, T. Desrues, C. Oliveau, A. Morisset, B. Martel, F. Torregrosa, L. Roux, A. Kaminski-Cachopo, Q. Rafhay, S. Dubois
Publié dans: EU PVSEC 2019, Numéro 2BO.3.3, 2019
Éditeur: WIP GmbH & Co Planungs-KG

Integration Avenues in Solar Cells Implementing Passivating Contacts

Auteurs: J.J. Diaz Leon, C. Allebé, J. Horzel, G. Nogay, A. Descoeudres, G. Christmann, L. Ding, N. Badel, A. Ingenito, M. Despeisse, S. Nicolay, C. Ballif
Publié dans: EU PVSEC 2019, Numéro 2BO.2.4, 2019
Éditeur: WIP GmbH & Co Planungs-KG

Degradation and Regeneration of n+-Poly-Si on Oxide Surface Passivation under Illumination and Dark Annealing on p-Type Cz-Si

Auteurs: M. Winter, S. Bordihn, R. Peibst, J. Schmidt
Publié dans: EU PVSEC 2019, Numéro 2CV.2.4, 2019
Éditeur: WIP GmbH & Co Planungs-KG

Modelling of Passivation and Conductivity of n-Type Poly-Si Layers Adapting Machine Learning

Auteurs: S. Bordihn, B. Min, R. Peibst, R. Brendel
Publié dans: EU PVSEC 2019, Numéro 2BO.3.1, 2019
Éditeur: WIP GmbH & Co Planungs-KG

Development of Phosphorus Thin Doped Layers by Plasma Immersion for Homo- Hetero Junction Solar Cells Application

Auteurs: J. Jourdan, T. Desrues, A. Lanterne, D. Muñoz, R. Varache, A. Danel, P. Carroy, C. Roux, S. Dubois
Publié dans: EU PVSEC 2019, Numéro 2DV.1.56, 2019
Éditeur: WIP GmbH & Co Planungs-KG

Environmental and social impact assessment of high-efficient double side contacted cells with innovative carrier selective contacts

Auteurs: C. Poulopoulos, B. Hartlin, Donald Reid, Saori Galley, and Elodie Bauguen
Publié dans: EU PVSEC 2019, Numéro 4.AV.2.56, 2019
Éditeur: WIP GmbH & Co Planungs-KG

DISC - Introductory talk

Auteurs: Byungsul Min
Publié dans: Wokrshop: High Efficiency Approaches in Crystalline Silicon PV, 2019
Éditeur: N/A

Advanced TCO Processes for Ultra-thin TOPCon Layers

Auteurs: Frank Feldmann
Publié dans: Wokrshop: High Efficiency Approaches in Crystalline Silicon PV, 2019
Éditeur: N/C

DISC Expolitation Results

Auteurs: Rikus Janken
Publié dans: Wokrshop: High Efficiency Approaches in Crystalline Silicon PV, 2019
Éditeur: N/C