Development of a new disruptive semiconductor technology to produce more efficient, smaller, lighter, and more robust power switches.

Información del proyecto

3C-SiC Si

Identificador del acuerdo de subvención: 729083

DOI

10.3030/729083

Proyecto cerrado

Fecha de la firma de la CE 13 Mayo 2016

Fecha de inicio 1 Junio 2016

Fecha de finalización 30 Septiembre 2016

Financiado con arreglo a

• SOCIETAL CHALLENGES - Secure, clean and efficient energy

Coste total

€ 71 429,00

Aportación de la UE

€ 50 000,00

Coordinado por

ANVIL SEMICONDUCTORS LTD
United Kingdom

Periodic Reporting for period 1 - 3C-SiC Si (Development of a new disruptive semiconductor technology to produce more efficient, smaller, lighter, and more robust power switches.)

Período documentado: 2016-06-01 hasta 2016-09-30

Resumen del contexto y de los objetivos generales del proyecto

Anvil Semiconductors has developed a new disruptive Silicon Carbide semiconductor to produce more efficient, smaller, lighter, and more robust power switches. A new, unique semiconductor material (SC-SiC) enabling the production of better performing Silicon Carbide (SiC) power devices at a similar cost to conventional Silicon devices (Si). For society the material will produce significant energy savings, unparalleled efficiency and cost effective devices. Anvil studied the business and commercial feasibility of bringing the material to the market and it demonstrated a large market opportunity, as well as outlining the development stages needed to be undertaken to get there.

Trabajo realizado desde el comienzo del proyecto hasta el final del período abarcado por el informe y los principales resultados hasta la fecha

Anvil conducted a full feasibility study, looking into both the business and technical aspects of the novel material including scouting and identifying industrial partners in the supply chains, sizing the market and profiling customers, accomplishing 5 year financial projections, assessing the IP management strategy and conducting a risk and contingency plan, as well as validating the technology with end users.

Avances que van más allá del estado de la técnica e impacto potencial esperado (incluida la repercusión socioeconómica y las implicaciones sociales más amplias del proyecto hasta la fecha)

Silicon Carbide power semiconductors are a relatively new entrant in the commercial marketplace, with the first SiC Schottky Diode introduced in 2001. Hence, the biggest competition still comes from the incumbent technology, Silicon. While, very few of the main players have invested in 3C-SiC development and no one already reached the market: ST (France) have a project to build 3C-SiC wafers but their technology appears to have come to a dead end. Those that have invested in 3C-SiC are predominantly using [111] Silicon and accepting qualities good enough for use in microelectromechanical systems rather than power devices, or as a substrate for growing other compound semiconductors such as GaN.

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