Skip to main content

Mid- and far-IR optoelectronic devices based on Bose-Einstein condensation

Objective

Optoelectronic devices typically operate in the weak coupling regime between light and matter, for example in conventional lasers relying on population inversion to achieve optical gain. Recently there has been a surge of interest in quantum systems operating instead in the strong coupling regime, when the coupling strength of the light-matter interaction is so strong that new states – cavity polaritons – are created, that are partially light, partially material excitation. In semiconductors, exciton-polaritons have been the most widely studied type of strongly coupled system. Recently a new phenomenon has been realized exploiting intersubband transitions. The resulting excitations are called intersubband polaritons, and they have two remarkable properties: (i) a bosonic character that is maintained up to high carrier densities since they are not restricted by the Mott transition limit; (ii) large Rabi splittings. Although the scientific community has explored the basic science of intersubband polaritons, their potential for future and innovative optoelectronic devices has been entirely untapped.
The MIR-BOSE project will realize this potential, and demonstrate disruptive optoelectronic devices operating in the strong coupling regime between light and matter. We will demonstrate the first bosonic lasers operating in the mid-IR and THz ranges of the electromagnetic spectrum. Laser action here does not rely on population inversion, so we will achieve temperature independent operation and high powers. We will demonstrate a new concept of inverse-Q-switching leading to the generation of high power pulses in the mid-IR, overcoming severe bottlenecks in current technology. Finally, we will demonstrate non-classical/quantum light sources and devices, generating squeezed states of light in the mid-IR/THz spectral range for quantum optics. These new sources will have a major impact on several technologies and applications, being advantageous compared to current solutions.

Call for proposal

H2020-FETOPEN-1-2016-2017
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

UNIVERSITE PARIS-SACLAY
Address
Immeuble Technologique Entree B Rte De L Orme Aux Merisiers
91190 Saint Aubin
France
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 466 562,50

Participants (7)

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France
EU contribution
€ 589 057,50
Address
Rue Michel Ange 3
75794 Paris
Activity type
Research Organisations
UNIVERSITAET REGENSBURG
Germany
EU contribution
€ 389 402,50
Address
Universitatsstrasse 31
93053 Regensburg
Activity type
Higher or Secondary Education Establishments
IDRYMA TECHNOLOGIAS KAI EREVNAS
Greece
EU contribution
€ 453 750
Address
N Plastira Str 100
70013 Irakleio
Activity type
Research Organisations
UNIVERSITA DI PISA
Italy
EU contribution
€ 303 375
Address
Lungarno Pacinotti 43/44
56126 Pisa
Activity type
Higher or Secondary Education Establishments
CONSIGLIO NAZIONALE DELLE RICERCHE
Italy
EU contribution
€ 849 316,25
Address
Piazzale Aldo Moro 7
00185 Roma
Activity type
Research Organisations
UNIVERSITY OF LEEDS
United Kingdom
EU contribution
€ 617 196,25
Address
Woodhouse Lane
LS2 9JT Leeds
Activity type
Higher or Secondary Education Establishments
TEMATYS
France
EU contribution
€ 117 500
Address
6 Cite De Trevise
75009 Paris
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)