Graphene, with ultrahigh carrier mobility and ultrafast optoelectronic signal processing ability, has great potential as a carrier of valley degree of freedom and is very promising for both fundamental research and practical application of valleytronics. Therefore, successfully manipulating valley pseudospin of electrons in graphene would greatly advance the study of valleytronics. However, in contrast to the recent progresses on Transition metal dichalcogenide monolayers, the optical and opto-electric valley physics with gapped graphene has never been experimentally studied before. More importantly, the phenomena of valley optoelectronics in gapped graphene are very different from what was studied already with MoS2 in visible light range. It includes Berry effects that are controlled by infrared and terahertz (THz) light, which are orders of magnitude stronger (due to its small gap) and also has great practical applications in photodetection in this important wavelength range with under-developed photodetectors.
Our overall objectives include Identifying and quantification extremely-high valley Hall photoconductivity, Unravelling time-resolved dynamics of valley optoelectronics in graphene and Optimizing infrared and THz Berry photodetectors.