Objective Modern information processing is based on the degrees of freedom (DOF) of electrons, which are known as charge and spin. Manipulating DOF of electrons is the core function of information-processing unit such as transistor and photodetector. Finding and manipulating new DOF for electrons may open up possibility for next-generation information processing, such as quantum computing. Recently, a new DOF of electrons—valley pseudospin—was found in two dimensional (2D) hexagonal lattices, whose band structures manifest a pair of valleys at the corner of the hexagonal Brillouin zone (labeled as K and -K valley), giving rise to a valley DOF that is in close analogy to electron spin. As 2D hexagonal crystal, graphene, with ultrahigh carrier mobility and ultrafast optoelectronic signal processing ability, has great potential as carrier of valley DOF and intriguing prospect for both fundamental research and practical application of valleytronics. Therefore manipulating valley pseudospin of electrons in graphene would greatly advance the study of valleytronics. This proposal presents the first experimental study of Berry optoelectronics in gapped graphene, in particular extremely strong Valley Hall effects and Valley Hall dynamics. The implementation includes three sections. The first is to break inversion symmetry of graphene crystal by fabricating graphene/boron nitride heterostructure and dual-gate bilayer graphene device. This symmetry breaking allows the Bloch electrons in K and -K valleys to experience valley-contrasted orbital magnetic moments and Berry curvatures, which result in valley-dependent optical selection rule and valley Hall effect. This supplies us paradigm for infrared and terahertz photodetection for section two. In section three, we explore the dynamics of confining charge carriers in a specified valley, by measuring the time-resolved behaviors. Fields of science natural sciencesphysical scienceselectromagnetism and electronicsoptoelectronicsengineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgrapheneengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensorsnatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencescomputer and information sciencesdata sciencedata processing Programme(s) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Topic(s) MSCA-IF-2016 - Individual Fellowships Call for proposal H2020-MSCA-IF-2016 See other projects for this call Funding Scheme MSCA-IF-EF-ST - Standard EF Coordinator FUNDACIO INSTITUT DE CIENCIES FOTONIQUES Net EU contribution € 158 121,60 Address AVINGUDA CARL FRIEDRICH GAUSS 3 08860 Castelldefels Spain See on map Region Este Cataluña Barcelona Activity type Research Organisations Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Total cost € 158 121,60
