Objective Atomically thin layers of transition metal dichalcogenides (TMD) are gaining increasing attention as new materials for futureBeyond-CMOS electronics. Recently, a great progress has been made in deposition of high quality layers of TMDs pavingthe way towards wafer scale device manufacturing. However, many fundamental and technological challenges still have tobe addressed. Precise tuning of the number of layers, doping, surface functionalization and selective low damage etching ofTMDs are among the most critical technological steps. Plasma processing is an enabling technology used for doping,etching and deposition of ultrathin layers in microelectronics industry. However, the application of plasmas for integration of2D materials remains marginal and poorly controlled. The major challenge for plasma treatment of atomically thin materialsis the need for unprecedented control of fluxes and energies of plasma species at the substrate. Pulsed plasma technologyholds promise of reaching conditions required for low damage processing of 2D materials with a single atomic layerprecision. The ambition of PULSE2D is to develop highly controlled pulsed-plasma technology for integration of TMDs innano-electronic devices on a wafer-scale. A fundamental study of the mechanisms of interaction between pulsed plasmasand atomically thin TMD materials will be performed. Defect production, adsorption and etching processes will be quantifiedas a function of plasma parameters. This information will be used to perform atomic layer etching, functionalization anddefect healing of TMDs using pulsed plasmas. The research and training activities will enhance technical skills of thecandidate in the emerging area of plasma processing of 2D materials, industry-relevant nano-fabrication and measurementof TMDs transport characteristics. High fundamental and technological interest and timeliness of this subject will provide apowerful thrust for the future research career of the candidate. Fields of science engineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgraphenenatural sciencesphysical sciencesplasma physicsnatural scienceschemical sciencespolymer sciencesnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Keywords Transition metal dichalcogenides 2D materials pulsed plasma treatment doping atomic layer etching defect healing ion energy control high-k dielectric gates atomic layer deposition Programme(s) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Topic(s) MSCA-IF-2016 - Individual Fellowships Call for proposal H2020-MSCA-IF-2016 See other projects for this call Funding Scheme MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF) Coordinator INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM Net EU contribution € 160 800,00 Address KAPELDREEF 75 3001 Leuven Belgium See on map Region Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven Activity type Research Organisations Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Total cost € 160 800,00
