Spintronics is considered among the potential paradigm changing technologies for the "Beyond Moore" era. Present spintronic technologies rely on ferromagnets, however, ferromagnets possess innate limitations in packing density, magnetic-field hardness and utility in memristive-like (synapse-like) devices due to dipolar stray fields. Moreover, their operation speed is limited by the GHz ferromagnetic resonance scale.
Independently, the discovery of graphene and topological phenomena opened another prominent avenue of research in the “Beyond Moore” technology domain. In physics, While fascinating theoretically, practical means for controlling topologoical phases in devices have remained elusive. Spintronics could be a key here, however, ferromagnets again offer only a limited playground constrained by symmetry.
These limitations can be lifted by including antiferromagnets into spintronics as already demonstrated by our initial results. However, our understanding of basic principles that might allow in the future for turning our new antiferromagnetic spintronics concept into applications is still at its infancy. A continuing fundamental research program is necessary for fully unraveling the physical, material, and device aspects that govern the write/read speed and efficiency, and the retention characteristics of antiferromagnetic digital and analogue memory cells. Among others this will require improving our toolbox of techniques for imaging antiferromagnetic domain structures and dynamics with high spatial and temporal resolution. In the end, if successful, ASPIN will not merely enable a future digital or neuromorphic, and ultra-fast memory technology based on antiferromagnets. It will impact the entire research field of antiferromagnets whose utility has, so far, remained a virtually unwritten chapter in magnetism.
