Skip to main content

Advanced PROM Building Blocks

Objective

The goal of this project was the integration of new-generation reprogrammable, read-only memory devices (both EPROM and EEPROM) for the application-specific IC (ASIC) market into:

- one-micron and low-voltage (1.5 V, 2 micron design rule) CMOS (in the first phase of the project)
- 0.8 micron and low-voltage (1.5 V, 1.5 micron design rule) CMOS (in the second phase).

At the start of the project the availability of cell libraries and CAD tools for non-volatile memory was quite limited. One of the main objectives of the project has thus been the development of cell libraries for EPROM and EEPROM blocks and distributed memory, together with all the support circuitry, such as decoders, sense amplifiers, high voltage generators, etc. CAD tools to design and correctly match memory blocks of arbitrary size had also to be developed, as well as routing tools to handle the special high voltage requirements.

Coordinator

GEC Plessey Semiconductors plc
Address
Caswell
NN12 8EQ Towcester
United Kingdom

Participants (9)

GEMPLUS CARD INTERNATIONAL
France
Address
100 Avenue Du Pic De Bretagne
13881 Gemenos
INSTITUTO DE ENGENHARIA DE SISTEMAS E COMPUTADORES
Portugal
Address
Apartado 10105, Rua Alves Redol, 9
1017 Lisboa
Institut National Polytechnique de Grenoble
France
Address
46 Avenue Félix Viallet
38031 Grenoble
Interuniversitair Mikroelektronica Centrum
Belgium
Address
Kapeldreef 75
3030 Heverlee
MIKRON
Germany
Address
Breslauer Straße 1-3
85386 Eching
SGS Thomson Microelectronics SA
France
Address
17 Avenue Des Martyrs
38340 Grenoble
Thomson Microelectronics Srl (SGS)
Italy
Address
Via Carlo Olivetti
20041 Agrate Brianza Milano
UNIVERSITY COLLEGE CORK
Ireland
Address
Prospect Row
Cork
Università degli Studi di Bologna
Italy
Address
Viale Risorgimento 2
40136 Bologna