Advanced PROM Building Blocks

Objective

The goal of this project was the integration of new-generation reprogrammable, read-only memory devices (both EPROM and EEPROM) for the application-specific IC (ASIC) market into:

- one-micron and low-voltage (1.5 V, 2 micron design rule) CMOS (in the first phase of the project)
- 0.8 micron and low-voltage (1.5 V, 1.5 micron design rule) CMOS (in the second phase).

At the start of the project the availability of cell libraries and CAD tools for non-volatile memory was quite limited. One of the main objectives of the project has thus been the development of cell libraries for EPROM and EEPROM blocks and distributed memory, together with all the support circuitry, such as decoders, sense amplifiers, high voltage generators, etc. CAD tools to design and correctly match memory blocks of arbitrary size had also to be developed, as well as routing tools to handle the special high voltage requirements.

Programme(s)

• FP3-ESPRIT 3 - Specific research and technological development programme (EEC) in the field of information technologies, 1990-1994

Coordinator

GEC Plessey Semiconductors plc

Address

Caswell
NN12 8EQ Towcester
United Kingdom

Participants (9)

GEMPLUS CARD INTERNATIONAL

France

Address

100 Avenue Du Pic De Bretagne
13881 Gemenos

INSTITUTO DE ENGENHARIA DE SISTEMAS E COMPUTADORES

Portugal

Address

Apartado 10105, Rua Alves Redol, 9
1017 Lisboa

Institut National Polytechnique de Grenoble

France

Address

46 Avenue Félix Viallet
38031 Grenoble

Interuniversitair Mikroelektronica Centrum

Belgium

Address

Kapeldreef 75
3030 Heverlee

MIKRON

Germany

Address

Breslauer Straße 1-3
85386 Eching

SGS Thomson Microelectronics SA

France

Address

17 Avenue Des Martyrs
38340 Grenoble

Thomson Microelectronics Srl (SGS)

Italy

Address

Via Carlo Olivetti
20041 Agrate Brianza Milano

UNIVERSITY COLLEGE CORK

Ireland

Address

Prospect Row
Cork

Università degli Studi di Bologna

Italy

Address

Viale Risorgimento 2
40136 Bologna