Periodic Reporting for period 2 - 2D-SIPC (Two-dimensional quantum materials and devices for scalable integrated photonic circuits)
Reporting period: 2020-04-01 to 2022-03-31
2D-SIPCs breakthrough will be the development and prototyping of a full set of 2DM on-chip quantum components and the scalable integration of these into prototype IQNs. 2D-SIPCs specific objectives include:
• Tuneable and entangled single photon generation (1) Theoretical modelling by DFT calculations and experimental electro-optic characterization of SPEs in 2DMs and their HSs, to investigate optical transitions, selection rules, strain effects, excitonic binding energies, intersubband transitions, and electrically driven single-photon light-emitting devices. (2) Development of large-scale device arrays of spectrally tuneable single- and entangled-photon sources with 2DMs. (3) Integration of entangled-photon devices with Si and SiN photonic circuits. (4) Deterministic implantation of quantum emitters in suspended WSe2, hBN, MoSe2.
• Ultra-fast and non-linear single photon processing (1) Development of a graphene Si and SiN electro-optical modulator, based on electrostatic gating of graphene. (2) Design and development of low loss graphene-based phase modulators on Si and SiN waveguides, exploiting properly biased graphene/graphene capacitors. (3) Demonstration of an on-chip nonlinear logic gate based on photon-photon interactions, in electrically controlled 2MDs SPEs, efficiently coupled to photons into a waveguide.
• Broadband and high temperature single photon detection (1) Demonstration of a SPD using a graphene-based Josephson junction (gJJ) as an ultra-broadband threshold detector for single photons from the visible to THz frequencies. (2) Development of above liquid nitrogen temperature superconducting (SC) nanowire SPDs from the atomic layers of the high-temperature SC BSCCO.
• Tuneable and entangled single photon generation (1) Theoretical modelling by DFT calculations and experimental electro-optic characterization of SPEs in 2DMs and their HSs, to investigate optical transitions, selection rules, strain effects, excitonic binding energies, intersubband transitions, and electrically driven single-photon light-emitting devices. (2) Development of large-scale device arrays of spectrally tuneable single- and entangled-photon sources with 2DMs. (3) Integration of entangled-photon devices with Si and SiN photonic circuits. (4) Deterministic implantation of quantum emitters in suspended WSe2, hBN, MoSe2.
• Ultra-fast and non-linear single photon processing (1) Development of a graphene Si and SiN electro-optical modulator, based on electrostatic gating of graphene. (2) Design and development of low loss graphene-based phase modulators on Si and SiN waveguides, exploiting properly biased graphene/graphene capacitors. (3) Demonstration of an on-chip nonlinear logic gate based on photon-photon interactions, in electrically controlled 2MDs SPEs, efficiently coupled to photons into a waveguide.
• Broadband and high temperature single photon detection (1) Demonstration of a SPD using a graphene-based Josephson junction (gJJ) as an ultra-broadband threshold detector for single photons from the visible to THz frequencies. (2) Development of above liquid nitrogen temperature superconducting (SC) nanowire SPDs from the atomic layers of the high-temperature SC BSCCO.
2D-SIPC has already achieved many of the major goals laid out in the project. We have discovered a multitude of novel opto-electronic materials from 2D materials, with unprecedented capabilities for quantum technologies. These included the lowest carrier densities for a superconductor ever reported, novel indirect excitons with record long lifetimes, and novel twistronic structures. These heterostructures were used to induce single photon emitters which can be deterministically fabricated into arrays, providing extremely bright single photon sources. Single photon detectors were fabricated from novel 2D superconductors which enable unprecedented operation above liquid nitrogen temperatures and at GHz frequencies. All of the above components were integrated into silicon photonics waveguides, and were shown to be integrateable on these in a mutually compatible way. All these component were designed to be compatible with Single Quantum’s industrial platforms.
a) Progress beyond the state of the art
• UCAM observed the longest indirect exciton lifetime (~0.2 ms) reported in any 2L-TMD-LMHs.
• CNIT combines the source, processing and detection part on a fully integrated CMOS-compatible single chip solution using 2D materials.
• ICFO develops first ever single photon detectors for GHz frequency photons.
• ICFO will develop high temperature superconductor based single photon detectors for telecommunication wavelengths.
• SQ will iintegrate the novel 2DM-based SPD and SPE from our partners in our industrial-grade system will bridge the gap from the lab to a marketable product.
b) Expected potential impacts
• CNITs new designed chips that will be fabricated represent a big step toward this direction.
• ICFOs GHz detectors will enable new functionalities in quantum computation.
• ICFOs high temperature superconductor based single photon detectors will allow to strongly reduce the cost of communications infrastructures.
• SQ will take a step forward in its single photon detector line, that will be enabled by the academic and industrial partnership in this project.
• UCAMs ultra-long indirect exciton lifetime can have applications for quantum simulations and communication
• UCAMs demonstrated approach to SPE array formation allows scalability, offering a feasible route for using SPEs for quantum technologies, particularly regarding quantum communication and information processing.
• CNIT aims to deliver a “ready for use” manufact for broad utilization. The system has a large potential market in all the situations in which quantum functions using low-cost fully integrated systems are desired
• Once the integration of novel 2DM devices occurs in an industrial setting at SQ, it will increase the TRL level of the devices. This will in turn, allow the generation of marketable prototypes and start addressing the optimization of their performance and scalability.
• Our participation in bringing novel 2DM technology from our partners’ labs to the SPD and SPE markets, will allow SQ to be the first to master these new technologies, to remain ahead of the completion and to industrialize a new generation of SPDs and SPEs.
• UCAM observed the longest indirect exciton lifetime (~0.2 ms) reported in any 2L-TMD-LMHs.
• CNIT combines the source, processing and detection part on a fully integrated CMOS-compatible single chip solution using 2D materials.
• ICFO develops first ever single photon detectors for GHz frequency photons.
• ICFO will develop high temperature superconductor based single photon detectors for telecommunication wavelengths.
• SQ will iintegrate the novel 2DM-based SPD and SPE from our partners in our industrial-grade system will bridge the gap from the lab to a marketable product.
b) Expected potential impacts
• CNITs new designed chips that will be fabricated represent a big step toward this direction.
• ICFOs GHz detectors will enable new functionalities in quantum computation.
• ICFOs high temperature superconductor based single photon detectors will allow to strongly reduce the cost of communications infrastructures.
• SQ will take a step forward in its single photon detector line, that will be enabled by the academic and industrial partnership in this project.
• UCAMs ultra-long indirect exciton lifetime can have applications for quantum simulations and communication
• UCAMs demonstrated approach to SPE array formation allows scalability, offering a feasible route for using SPEs for quantum technologies, particularly regarding quantum communication and information processing.
• CNIT aims to deliver a “ready for use” manufact for broad utilization. The system has a large potential market in all the situations in which quantum functions using low-cost fully integrated systems are desired
• Once the integration of novel 2DM devices occurs in an industrial setting at SQ, it will increase the TRL level of the devices. This will in turn, allow the generation of marketable prototypes and start addressing the optimization of their performance and scalability.
• Our participation in bringing novel 2DM technology from our partners’ labs to the SPD and SPE markets, will allow SQ to be the first to master these new technologies, to remain ahead of the completion and to industrialize a new generation of SPDs and SPEs.