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Ferroelectric REsistors as Emerging Materials for Innovative Neuromorphic Devices

Publications

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

Author(s): L. Begon-Lours, M. Halter, D. Davila Pineda, V. Bragaglia, Y. Popoff, A. la Porta, D. Jubin, J. Fompeyrine, B. J. Offrein
Published in: 2021 IEEE International Memory Workshop (IMW), 2021, Page(s) 1-4, ISBN 978-1-7281-8517-0
Publisher: IEEE
DOI: 10.1109/imw51353.2021.9439611

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Author(s): Laura Begon-Lours, Mattia Halter, Diana Davila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein
Published in: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, Page(s) 1-3, ISBN 978-1-7281-8176-9
Publisher: IEEE
DOI: 10.1109/edtm50988.2021.9420886

Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO 4 /TiO x Junctions

Author(s): Laura Bégon-Lours, Mattia Halter, Youri Popoff, Bert Jan Offrein
Published in: physica status solidi (RRL) – Rapid Research Letters, Issue 15/5, 2021, Page(s) 2000524, ISSN 1862-6254
Publisher: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202000524

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

Author(s): L. Begon-Lours, M. Halter, Y. Popoff, Z. Yu, D.F. Falcone, D. Davila, V. Bragaglia, A. La Porta, D. Jubin, J. Fompeyrine, B. J. Offrein
Published in: IEEE Journal of the Electron Devices Society, 2021, Page(s) 1-1, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3108523

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