Low noise amplifiers are a key component in countless electronic systems in many fields including telecommunications, satellite communications, radar, defense, radio astronomy, quantum computing and many more. Depending on the application, a better LNA will allow for transmission of higher data rates, detection of weaker signals and decoding of noisier signals. Two examples to illustrate this: Firstly, a communications network could be built using fewer antennas emitting less electromagnetic power. This would improve acceptance of new standards in society, reduce cost to the operator and reduce power consumption. A second example is the use of better LNAs in radio astronomy antenna arrays such as the planned SKA. There, a sufficiently good LNA would allow for the operation of such an array without the need for cryogenic cooling. This would significantly reduce the cost of such a system as well as the power consumption.
With our InP HEMT technology, that is based on decades of research at ETH Zurich, we are able to provide transistors with approximately 30% less noise than currently leading GaAs mHEMTs. This is possible thanks to the inherent advantage of using an InP substrate for a low noise HEMT as well as the highly optimized fabrication process. Scaling our fabrication capabilities will allow us to be cost competitive with existing technologies while providing superior performance. The goal of this project is to develop integrated circuit LNAs based on our InP HEMT technology. This will allow for a broad adoption of InP HEMTs in many markets and lead to advances in many fields. Additionally, for future applications at ever higher frequencies we will develop a second generation of scaled InP HEMTs to provide solutions at D-band and beyond.
