Periodic Reporting for period 1 - Diramics (InP HEMT technology for Ultra-Low-Noise Amplifiers)
Período documentado: 2019-03-01 hasta 2019-08-31
Low noise amplifiers are a key component in countless electronic systems in many fields including telecommunications, satellite communications, radar, defense, radio astronomy, quantum computing and many more. Depending on the application, a better LNA will allow for transmission of higher data rates, detection of weaker signals and decoding of noisier signals. Two examples to illustrate this: Firstly, a communications network could be built using fewer antennas emitting less electromagnetic power. This would improve acceptance of new standards in society, reduce cost to the operator and reduce power consumption. A second example is the use of better LNAs in radio astronomy antenna arrays such as the planned SKA. There, a sufficiently good LNA would allow for the operation of such an array without the need for cryogenic cooling. This would significantly reduce the cost of such a system as well as the power consumption.
With our InP HEMT technology, that is based on decades of research at ETH Zurich, we are able to provide transistors with approximately 30% less noise than currently leading GaAs mHEMTs. This is possible thanks to the inherent advantage of using an InP substrate for a low noise HEMT as well as the highly optimized fabrication process. Scaling our fabrication capabilities will allow us to be cost competitive with existing technologies while providing superior performance. The goal of this project is to develop integrated circuit LNAs based on our InP HEMT technology. This will allow for a broad adoption of InP HEMTs in many markets and lead to advances in many fields. Additionally, for future applications at ever higher frequencies we will develop a second generation of scaled InP HEMTs to provide solutions at D-band and beyond.
With our InP HEMT technology, that is based on decades of research at ETH Zurich, we are able to provide transistors with approximately 30% less noise than currently leading GaAs mHEMTs. This is possible thanks to the inherent advantage of using an InP substrate for a low noise HEMT as well as the highly optimized fabrication process. Scaling our fabrication capabilities will allow us to be cost competitive with existing technologies while providing superior performance. The goal of this project is to develop integrated circuit LNAs based on our InP HEMT technology. This will allow for a broad adoption of InP HEMTs in many markets and lead to advances in many fields. Additionally, for future applications at ever higher frequencies we will develop a second generation of scaled InP HEMTs to provide solutions at D-band and beyond.
During phase 1 of the SME Instruments project, we performed a technical feasibility study as well as a commercial & financial feasibility study.
In the technical feasibility study we worked on benchmarking our technology as well as finding suitable partners for testing & benchmarking our integrated circuits in the next phase. We also examined what the technical requirements are for a fabrication facility that can serve us to produce InP HEMT based products at a competitive price. Finally, we also stated with first evaluations of potential tests needed in order to obtain certifications for our products.
The commercial and financial feasibility focused on an analysis of the low noise amplifier market. We have determined that there is sufficient demand for better solutions and in fact it is the high performance applications that show the strongest growth. Based on this we made a financial forecast to demonstrate that we can offer our technology at competitive prices while remaining profitable.
In the technical feasibility study we worked on benchmarking our technology as well as finding suitable partners for testing & benchmarking our integrated circuits in the next phase. We also examined what the technical requirements are for a fabrication facility that can serve us to produce InP HEMT based products at a competitive price. Finally, we also stated with first evaluations of potential tests needed in order to obtain certifications for our products.
The commercial and financial feasibility focused on an analysis of the low noise amplifier market. We have determined that there is sufficient demand for better solutions and in fact it is the high performance applications that show the strongest growth. Based on this we made a financial forecast to demonstrate that we can offer our technology at competitive prices while remaining profitable.
With our InP HEMT technology we will be able to offer low noise transistors and circuits that outperform other technologies on the market significantly. In the comparisons made so far, our technology outperforms current state of the art by 30% in terms of noise temperature. This will satisfy the demand for ever improving performance from many different application areas. Among many other cases, better low noise amplifiers will allow for better connectivity with less impact on the environment, improve the sensitivity of research infrastructure such as radio astronomy antennas, help enable advances in quantum computing. By the end of the project expect to be able to offer the current transistor technology in the form of integrated circuit LNAs. Additionally, we will have developed a second generation of transistors for operation at higher frequencies where future applications are continuously emerging.