Access to European Infrastructure for Nanoelectronics

Livrables

Update to the Data Management Plan including KPI management
Data Management Plan including KPI management

Year 1 Access summary report
Project Flyer
White paper based on Landscape Analysis Report (Phase 1)

White paper based on Landscape Analysis Report Phase 1

Report on Year 1 Workshops and events
Year 2 Access summary report
Initial Dissemination, Communication and Exploitation Plan

Initial Dissemination Communication and Exploitation Plan

Year 1 Enhancement of TA/VA activities based on user feedback & JRAs

Year 1 Enhancement of TAVA activities based on user feedback JRAs

Year 3 Access summary report
2nd Update on the Dissemination, Communication and Exploitation Plan

2nd Update on the Dissemination Communication and Exploitation Plan

Report on Year 3 Workshops and events
1st Update on the Dissemination, Communication and Exploitation Plan

1st Update on the Dissemination Communication and Exploitation Plan

Year 2 Enhancement of TA/VA activities based on user feedback & JRAs

Year 2 Enhancement of TAVA activities based on user feedback JRAs

Report on Year 2 Workshops and events

Press Release - project Announcement

Press Release project Announcement

ASCENT+ website and Access Portal

ASCENT website and Access Portal

Publications

Quantum teleportation with imperfect quantum dots

Auteurs: Basso Basset, F., Salusti, F., Schweickert, L. et al
Publié dans: npj Quantum Inf, Numéro 7, 7 (2021), 2021, ISSN 2056-6387
Éditeur: Springer Nature
DOI: 10.1038/s41534-020-00356-0

Laser induced crystallization of sputtered MoS2 thin films

Auteurs: Alessandro Tonon, Enrico Di Russo, Francesco Sgarbossa, Luca Bacci, Nicola Argiolas, Carlo Scian, Yurii P. Ivanov, Giorgio Divitini, Brendan Sheehan, Davide De Salvador, Andrea Gasparotto, Vittorio Morandi, Ray Duffy, Enrico Napolitani
Publié dans: Materials Science in Semiconductor Processing, Numéro Volume 164, 2023, 107616,, 2023, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2023.107616

Beyond the four-level model: Dark and hot states in quantum dots degrade photonic entanglement

Auteurs: Barbara Ursula Lehner; Tim Seidelmann; Gabriel Undeutsch; Christian Schimpf; Santanu Manna; Michał Gawełczyk; Saimon Filipe Covre da Silva; Xueyong Yuan; Sandra Stroj; Doris E. Reiter; Vollrath Martin Axt; Armando Rastelli
Publié dans: Nano Letters, Numéro 11, 23, 4,, 2023, Page(s) 1409–1415, ISSN 1530-6992
Éditeur: American Chemical Society
DOI: 10.48550/arxiv.2212.09529

Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing

Auteurs: Enrico Di Russo* Alessandro Tonon, Arianna Mischianti, Francesco Sgarbossa, Emma Coleman, Farzan Gity, Luca Panarella, Brendan Sheehan, Vasily A. Lebedev, Davide De Salvador, Ray Duffy*, and Enrico Napolitani*
Publié dans: ACS Appl. Electron. Mater., Numéro 5, 5,, 2023, Page(s) 2862–2875, ISSN 2637-6113
Éditeur: American Chemical Society
DOI: 10.1021/acsaelm.3c00362

GaAs quantum dots under quasiuniaxial stress: Experiment and theory

Auteurs: Xueyong Yuan, Saimon F. Covre da Silva, Diana Csontosová, Huiying Huang, Christian Schimpf, Marcus Reindl, Junpeng Lu, Zhenhua Ni, Armando Rastelli, and Petr Klenovský
Publié dans: Phys. Rev. B, Numéro 107, 235412, 2023, ISSN 1550-235X
Éditeur: American Physical Society
DOI: 10.1103/physrevb.107.235412

Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

Auteurs: Emma Coleman; Scott Monaghan ; Farzan Gity ; Gioele Mirabelli ; Ray Duffy ; Brendan Sheehan ; Shashank Balasubramanyam ;Ageeth A. Bol ; Paul Hurley
Publié dans: Appl. Phys. Lett., Numéro 123, 011901, 2023, ISSN 1077-3118
Éditeur: AIP
DOI: 10.1063/5.0151592

Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot

Auteurs: Peter Millington-Hotze, Santanu Manna, Saimon F. Covre da Silva, Armando Rastelli, Evgeny A. Chekhovich
Publié dans: Nature Communications, Numéro 14,Article number: 2677 (2023), 2023, Page(s) Article number: 2677 (2023), ISSN 2041-1723
Éditeur: Nature Publishing Group
DOI: 10.1038/s41467-023-38349-0

Experimental analysis of variability in WS2-based devices for hardware security

Auteurs: M. Vatalaro, H. Neill, F. Gity, P. Magnone, V. Maccaronio, C. Márquez, J.C. Galdon, F. Gamiz, F. Crupi, P. Hurley, R. De Rose
Publié dans: Solid-State Electronics, Numéro Volume 207, 2023, 108701, 2023, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108701

Two-photon excitation with finite pulses unlocks pure dephasing-induced degradation of entangled photons emitted by quantum dots

Auteurs: T. Seidelmann, T. K. Bracht, B. U. Lehner, C. Schimpf, M. Cosacchi, M. Cygorek, A. Vagov, A. Rastelli, D. E. Reiter, and V. M. Axt
Publié dans: Phys. Rev. B, Numéro 107, 235304, 2023, ISSN 1550-235X
Éditeur: American Physical Society
DOI: 10.48550/arxiv.2301.10820

Electric field induced tuning of electronic correlation in weakly confining quantum dots

Auteurs: Huiying Huang, Diana Csontosová, Santanu Manna, Yongheng Huo, Rinaldo Trotta, Armando Rastelli, and Petr Klenovský
Publié dans: Phys. Rev. B, Numéro 104, 165401, 2021, ISSN 2469-9969
Éditeur: APS
DOI: 10.1103/physrevb.104.165401

The potential and global outlook of integrated photonics for quantum technologies

Auteurs: Pelucchi, E., Fagas, G., Aharonovich, I. et al.
Publié dans: Nature Reviews Physics, Numéro 4, 194–208 (2022), 2022, Page(s) 194–208, ISSN 2522-5820
Éditeur: Springer
DOI: 10.1038/s42254-021-00398-z

A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology

Auteurs: Urmimala Chatterjee , Herbert De Pauw , Olga Syshchyk , Thibault Cosnier , Anurag Vohra , Stefaan Decoutere
Publié dans: Solid-State Electronics, Numéro Volume 207, 2023, 108707,, 2023, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108707

Structural and electrical characterisation of PtS from H2S-converted Pt

Auteurs: Scott Monaghan, Emma M. Coleman, Lida Ansari, Jun Lin, Alexandra Buttimer, Patrick A. Coleman, James Connolly, Ian M. Povey, Bryan Kelleher, Cormac Ó Coileáin, Niall McEvoy, Paul K. Hurley, Farzan Gity,
Publié dans: Applied Materials Today, Numéro Volume 25, December 2021, 101163, 2021, ISSN 2352-9407
Éditeur: Elsevier
DOI: 10.1016/j.apmt.2021.101163

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Auteurs: Miika Mattinen, Farzan Gity, Emma Coleman, Joris F. A. Vonk, Marcel A. Verheijen, Ray Duffy, Wilhelmus M. M. Kessels, and Ageeth A. Bol
Publié dans: Chemistry of Materials, 2022, ISSN 0897-4756
Éditeur: American Chemical Society
DOI: 10.1021/acs.chemmater.2c01154

Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates,

Auteurs: Nikolay Petkov, Margarita Georgieva, Sinan Bugu, Ray Duffy, Brendan McCarthy, Maksym Myronov, Ann-Marie Kelleher, Graeme Maxwell, Giorgos Fagas
Publié dans: Microelectronic Engineering, Numéro Volume 280, 2023, 112071, 2023, ISSN 0167-9317
Éditeur: Elsevier BV
DOI: 10.1016/j.mee.2023.112071

Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives

Auteurs: Carlos Marquez ,Norberto Salazar, Farzan Gity ,Jose C. Galdon ,Carlos Navarro Carlos Sampedro , Paul K. Hurley , Edward Yi Chang and Francisco Gamiz
Publié dans: Micromachines, Numéro 2021, 12, 646, 2021, Page(s) 646, ISSN 2072-666X
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi12060646

Collective excitation of spatio-spectrally distinct quantum dots enabled by chirped pulses

Auteurs: Florian Kappe, Yusuf Karli, Thomas K Bracht, Saimon Filipe Covre da Silva, Tim Seidelmann, Vollrath Martin Axt, Armando Rastelli, Gregor Weihs, Doris E Reiter and Vikas Remesh
Publié dans: Mater. Quantum. Technol., Numéro 3 025006, 2023, ISSN 2633-4356
Éditeur: IOP
DOI: 10.1088/2633-4356/acd7c1

Quantum dots as potential sources ofstrongly entangled photons: Perspectives and challenges for applications in quantum networks

Auteurs: Christian Schimpf, Marcus Reindl, Francesco Basso Basset, Klaus D. Jöns, Rinaldo Trotta, and Armando Rastelli
Publié dans: Appl. Phys. Lett., Numéro 118, 100502 (2021), 2021
Éditeur: AIP
DOI: 10.1063/5.0038729

Investigating the transient response of Schottky barrier back-gated MoS2 transistors

Auteurs: Carlos Marquez, Norberto Salazar, Farzan Gity, Carlos Navarro, Gioele Mirabelli, Jose C Galdon, Ray Duffy, Santiago Navarro, Paul K Hurley and Francisco Gamiz
Publié dans: 2D Materials, Numéro 2D Mater. 7 025040, 2020
Éditeur: IOP Science
DOI: 10.1088/2053-1583/ab7628

GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

Auteurs: Saimon Filipe Covre da Silva, Gabriel Undeutsch, Barbara Lehner, Santanu Manna, Tobias M. Krieger, Marcus Reindl, Christian Schimpf, Rinaldo Trotta, and Armando Rastelli
Publié dans: Appl. Phys. Lett., Numéro 119, 120502 (2021), 2021
Éditeur: APL
DOI: 10.1063/5.0057070

Bright Single Photon Emission from Quantum Dots Embedded in a Broadband Planar Optical Antenna

Auteurs: Huiying Huang,Santanu Manna,Christian Schimpf,Marcus Reindl,Xueyong Yuan,Yining Zhang,Saimon Filipe Covre da Silva,Armando Rastelli
Publié dans: Adv.OpticalMater., Numéro 2021, 9, 2001490, 2021
Éditeur: Wiley
DOI: 10.1002/adom.202001490

Entanglement-based quantum key distribution with a blinking-free quantum dot operated at a temperature up to 20 K

Auteurs: Christian Schimpf, Santanu Manna, Saimon F. Covre da Silva, Maximilian Aigner, Armando Rastelli,
Publié dans: Adv. Photon., Numéro 3(6) 065001, 2021
Éditeur: SPIE
DOI: 10.1117/1.ap.3.6.065001

Automatic prediction of MOSFETs threshold voltage by machine learning algorithms

Auteurs: S. Choi , J. Mitard (imec)
Publié dans: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, Page(s) pp. 1-3, ISBN 979-8-3503-3252-0
Éditeur: IEEE
DOI: 10.1109/edtm55494.2023.10103059

Laser processing of 2D Transition metal dichalcogenides

Auteurs: """A. Mischianti, E. Napolitani UNIPD"""
Publié dans: Numéro 22/09/2021, 2021
Éditeur: Self published

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