Periodic Reporting for period 2 - eleGaNt (The first technology enabling large-scale gallium nitride industrialisation for mainstream power electronics and RF applications)
Reporting period: 2020-10-01 to 2021-11-30
By increasing material quality, more energy efficient devices can be manufactured at improved cost structure and energy savings in multiple areas such as consumer electronics, home appliances, data centers, EV/EHV markets, photovoltaic energy conversion, and many industrial applications. This will help boost the transition to a more sustainable society at large.
The project objectives are reduction in defect densities, demonstrating layers above 10µm in thickness, scaling technology to a commercially relevant wafer size (6") and engage with industrial partners in order to secure a joint development program.
To conclude, the project has experienced delays but has in the end successfully demonstrated GaN-on-Si wafers with defect densities at par with state-of-the-art and ready to demonstrate 6” wafers.
The project outcomes has resulted in outreach and initial discussions with industrial partners on joint development projects to scale the technology to 150mm wafer sizes and to demonstrate electrical devices.
In terms of dissemination, project results have been published in peer-reviewed papers, presented at several highly attended conferences, and published in media both online and in print, in Sweden and in Europe.
Through high quality material, compatible with low cost Si platforms eleGaNt technology enables improved energy efficiency and cost and will impact society positively in terms energy savings and thereby reduction in CO2 emission by an increased incorporation of efficent GaN technology in home appliances, EV/EHV, PV, data centers, and consumer electronics. A reduction in cost for several key high power markets will enable a faster adoption of more efficient technologies and thereby faster job creation in particular in sustainable energy sectors such as PV, EV/EHV, and wind.