Periodic Reporting for period 1 - eleGaNt (The first technology enabling large-scale gallium nitride industrialisation for mainstream power electronics and RF applications)
Reporting period: 2019-10-01 to 2020-09-30
By increasing material quality, more energy efficient devices can be manufactured at improved cost structure and energy savings in multiple areas such as consumer electronics, home appliances, data centers, EV/EHV markets, photovoltaic energy conversion, and many industrial applications. This will help boost the transition to a more sustainable society at large.
The project objectives are reduction in defect densities, demonstrating layers above 10µm in thickness, scaling technology to a commercially relevant wafer size (6"") and engage with industrial partners in order to secure a joint development program."
It is expected by the end of the project that defect densities are substantially lower than any GaN on foreign substrate technology commerically available and the we can grow even thicker layers (up to 20-30µm) on silicon wafers. Further it is expected to have entered into a joint developmetn project with a power electronics player to develop the technology on 150mm wafer size.
Through high quality material, compatible with low cost Si platforms eleGaNt technology enables improved energy efficiency and cost and will impact society positively in terms energy savings and thereby reduction in CO2 emission by an increased incorporation of efficent GaN technology in home appliances, EV/EHV, PV, data centers, and consumer electronics. A reduction in cost for several key high power markets will enable a faster adoption of more efficient technologies and thereby faster job creation in particular in sustainable energy sectors such as PV, EV/EHV, and wind.