The incorporation of metal-organic frameworks (MOFs) as highly porous dielectrics into an on-chip multi-layer wiring system requires multiple challenges to be addressed before commercialization. We showed for the first time the compatibility of MOFs deposited via a solvent-free approach with commonly used nanofabrication processes such as deposition onto high-aspect-ratio patterns, chemical mechanical polishing, and passivation. The retention of the crystalline order and porosity of the MOFs after polishing and passivation, along with the seamless gap-filling of the spaces in between 16 nm half-pitch metal wires, set a solid basis for the future introduction of MOFs into advanced logic chips and other nanoscale devices.
