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Photodiode integration on silicon nitride

Project description

Silicon nitride photonic integrated circuits expand the scope of silicon photonics

Monolithic integration is a technique that allows both electronics and optical devices to be integrated in a common semiconductor material in a single growth process. The EU-funded POTION project plans to realise monolithic integration of semiconductor photodetectors on top of a passive silicon nitride photonic integrated circuit. Silicon nitride combines low propagation loss (10 times better than silicon) and a large transparency window; however, lack of active elements for photon detection limits its widespread use. The project thus plans to combine a low-loss silicon nitride platform with novel active materials and also develop a fabrication process that enables the 'evanescent coupling' of silicon nitride to other materials.

Objective

In this project the fellow, Gabriele Navickaite, will conceive and realize monolithic integration of semiconductor photodetectors on top of a passive Silicon Nitride (SiN) Photonic Integrated Circuit (PIC).
This project will show for the first time the monolithic combination of the SiN passive platform with an active semiconductive element and thus constitutes an important step towards further integration. It clearly fills a market gap in the growing integrated photonics business.

Whereas the SiN platform has obtained significant attention in the past years, because of its low loss (10 times better than silicon) and large transparency window, the application space is limited by the absence of active elements on the PIC platform. A research and business breakthrough would be the combination of the low loss SiN platform with an active material for photon detection. LIGENTEC has already gained market insights that the additional integrated functionality is desired by the end-customer and will be still affordable due to wafer scale processing. In addition to passive SiN component (see an array waveguide grating chip in Figure 1) LIGENTEC has developed fabrication processes that enable evanescent coupling of SiN to other materials.

The applicant seeks to build on this development and integrate evanescently coupled photodetectors. The fellow Gabriele Navickaite together with the host company LIGENTEC proposes to reach the following objectives in the time frame of 24 months for the first time:
● Demonstration of integrated photodiodes on SiN photonic platform
● Demonstration of a packaged SiN PIC for wavelength splitting at VIS wavelengths and detecting (DEMO)
This 24-month project foresees to design and simulate the integrated photodiode, develop the material and finally fabricate and test a prototype.

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) H2020-MSCA-IF-2019

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Coordinator

LIGENTEC SA
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 191 149,44
Address
CHEMIN DE LA DENT D OCHE 1B EPFL INNOVATION PARK BATIMENT L
1024 ECUBLENS
Switzerland

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Schweiz/Suisse/Svizzera Région lémanique Vaud
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Links
Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 191 149,44
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