PHEMTRONICS achieved the following main results:
As for the “Plasmonic Phase Change Materials & Processes Development”:
o Development of processes of chemical vapor deposition (CVD) and low-cost chemical bath deposition (CBD) of phase-change gallium sulfide, GaS, and antimony sulfide, Sb2S3, with a structural amorphous-to-crystalline phase change activated both by thermal annealing and by green laser irradiation.
o Development of a CVD process on 1” sapphire and 4” silicon substrates for the deposition of few layers of molybdenum sulfide, MoS2, to exploit the order-to-order 2H-> 1T phase change.
o Development of a sputtering process for the deposition of molybdenum oxides, MoO2/MoO3 and VO2, and of methodologies to have the amorphous-to-crystalline transition of those oxides, as well as the semiconducting-to-metal transition and viceversa in MoO3/MoO2 and VO2.
As for the “Fabrication of plasmonic component and plasmonic actuation management”:
o Several configurations of plasmonic dimer nanoantennas based on gold and gallium, coupled to the GaS phase change material, have been designed and fabricated.
o An approach and code have been developed to predict the thickness at the monolayer level, of Ga-Chalcogenides materials (GaS, GaSe, GaTe) on various substrates. Universal “color rulers” useful to the 2D materials communities have been established and are available on the PHEMTRONICS website. The code to extend this universal approach to other materials on any substrate has been developed and made available by uploading it on open sources of Zenodo, Openaire with DOI: 10.5281.zenodo.5116286 at
https://zenodo.org/record/5116286(opens in new window).
As for the “Phase-Change Management”:
o Development of a Hamiltonian for a macroscopic-microscopic description/prediction of phase-transitions describing the role of the phonons/photons during phase-transitions and able to calculate/predict phase-transitions triggered by lasers.
o The dielectric functions of the phase-change materials GaS, Sb2S3, MoO2 and MoO3 in the bulk, monolayer, amorphous and crystalline phases have been established.
o The first optical and structural database of PCMs optical properties has been created and made available in Zenodo repository.
As for the “Device Design”:
o We have layout the first design of nanophotonic modulator on-chip based on pioneer-investigated phase-change material cell transition GaSam↔ GaScr and order-to-order transition crystalline transformation GaSlayered↔ GaSwurtzite. Amplitude and Phase modulators have been considered.
o We designed and fabricated a nanophotonic switch/modulator on-chip with plasmonically-enhanced GaS cell integrated atop Si3N4 nanophotonic device based on the transition GaSam↔ GaScr.
o The design and fabrication of a plasmonically enhanced broadband photodetector based on the amorphous-crystalline transition of Sb2S3 has been achieved.
o The concept and design of a dynamic display based on MoO2/MoO3 transitions has been demonstrated.
o The demonstrator of RF switch based on MIT VO2 has been fabricated.
A rich portfolio of communication, dissemination and exploitation activities have been executed, with public communications through the website (www.phemtronics.eu) social media (LinkedIn and TWITTER accounts), and several conferences/publications/posters/newsletters.
The 1st PHEMTRONICS school on Phase Change Materials and applications has been established.
The PHEMTRONICS workshop has been organized.
3 Special sessions at international conferences have been organized.
A cards PHASE CHANGE GAME for general public has been created and published; you can play it on smartphone, tablet and computer.
